Renesas 2SK3140-E

Overview

2SK3140-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drives, and uninterruptible power supplies. It delivers R_DS(on) = 6 mΩ typ. at V_GS = 10 V, supports 60 A continuous drain current, and features low gate charge (Q_g = 125 nC) for efficient PWM control in 48 V industrial systems.

For engineers reviewing the 2SK3140-E datasheet, 2SK3140-E pinout, 2SK3140-E application, or 2SK3140-E equivalent, this device is selected for high-current, low-loss switching where fast turn-on/turn-off times (t_d(on) = 60 ns, t_f = 320 ns), avalanche ruggedness (E_AR = 214 mJ), and 4 V gate drive compatibility are critical design requirements.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (V_GS(off) = 1.0–2.5 V) enables reliable enhancement-mode operation with TTL/CMOS-compatible 5 V logic drivers, while its body diode exhibits t_rr = 80 ns and V_DF = 1.0 V at I_F = 60 A for synchronous rectification support.

The device is characterized for repetitive avalanche operation (I_AP = 50 A, E_AR = 214 mJ) under defined conditions (R_g ≥ 50 Ω, T_ch = 25°C), and thermal performance is specified with θ_ch–c = 3.57°C/W, enabling robust thermal management on standard TO-220 heatsinks.

Key Specifications

Pinout & Package

2SK3140-E is housed in the TO-220CFM (RENESAS code PRSS0003AE-A) package - a through-hole, isolated-tab variant with screw-mount capability and 3.57°C/W channel-to-case thermal resistance. The metal tab is electrically connected to the Drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with 2SK3140-E, IXTH60N10L2 trades higher conduction loss for enhanced safe operating area and linear-mode stability, while IRFP4110PBF offers lower R_DS(on) and faster switching but omits guaranteed avalanche performance-making 2SK3140-E the balanced choice for cost-sensitive, rugged 48 V industrial switching where both efficiency and fault tolerance matter.

Availability

2SK3140-E is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and high-current DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for 2SK3140-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3140-E belongs to Renesas' legacy high-power discrete MOSFET family engineered for rugged, high-efficiency power conversion in industrial automation and computing power systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3140-E?

The 2SK3140-E is rated for 60 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. Derating is required above 25°C case temperature per the thermal derating curve in the datasheet. For sustained 60 A operation, thermal design must limit T_c to ≤75°C to retain ≥35 W channel dissipation. The 2SK3140-E achieves this with its 3.57°C/W θ_ch–c and TO-220CFM package.

Does the 2SK3140-E support 5 V logic-level gate drive?

Yes, the 2SK3140-E is explicitly characterized for 4 V gate drive compatibility: R_DS(on) = 8.0 mΩ max at V_GS = 4 V and I_D = 30 A. This ensures full enhancement with standard 5 V TTL/CMOS outputs without gate boosting. Its V_GS(off) range of 1.0–2.5 V provides sufficient noise margin, and I_GSS remains ≤±0.1 µA at ±20 V, minimizing static power draw. The 2SK3140-E thus eliminates need for level shifters in 5 V control architectures.

Is the 2SK3140-E avalanche-rated, and what are the test conditions?

Yes, the 2SK3140-E is specified for repetitive avalanche operation with E_AR = 214 mJ at T_ch = 25°C, I_AP = 50 A, and R_g ≥ 50 Ω. The test uses a standardized avalanche circuit with L = (2 × E_AR × V_DD) / (V_DSS × I_AP²) and confirms robustness against inductive switching faults. This rating applies only under those exact conditions; exceeding I_AP, reducing R_g, or raising T_ch degrades energy capability. The 2SK3140-E's documented avalanche performance distinguishes it from non-rated alternatives.

What is the thermal resistance from channel to case for the 2SK3140-E?

The 2SK3140-E has a channel-to-case thermal resistance (θ_ch–c) of 3.57°C/W, measured under steady-state DC conditions at T_c = 25°C. This value is derived from the 35 W channel dissipation rating (P_ch) and the 150°C maximum channel temperature (T_ch), using θ = (T_ch – T_c) / P_ch. The TO-220CFM package's isolated tab enables direct mounting to heatsinks, and transient thermal impedance data shows γ_s(t) decays rapidly-critical for pulsed-load reliability. This θ_ch–c enables compact thermal designs when paired with standard extruded aluminum heatsinks.

How does the body diode performance of the 2SK3140-E compare to discrete Schottky rectifiers?

The 2SK3140-E's integrated body diode has V_DF = 1.0 V at I_F = 60 A and t_rr = 80 ns at di_F/dt = 50 A/µs-superior to most bipolar diodes but higher forward drop than 45 V Schottky rectifiers (typically 0.5–0.7 V). Its fast recovery enables synchronous rectification in buck converters without excessive ringing, though efficiency lags dedicated Schottky devices above 20 A. The 2SK3140-E's diode is optimized for bidirectional switching integrity, not ultra-low-loss rectification; for best efficiency, external Schottky or SiC diodes remain preferred in high-frequency, high-current rectifier roles.