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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3225-Z-AZ

Name: 2SK3225-Z-AZ
Brand: Renesas
SKU: 2SK3225-Z-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3225-Z-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3225-Z-AZ.pdf

Description:: SMALL SIGNAL N-CHANNEL MOSFET

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Product details

Overview

2SK3225-Z-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial power supply synchronous rectification control. It delivers R_DS(on)1 = 18 mΩ max at V_GS = 10 V / I_D = 17 A, supports ±136 A pulsed drain current, and features built-in gate protection diode in TO-252 (MP-3Z) package.

For engineers reviewing the 2SK3225-Z-AZ datasheet, 2SK3225-Z-AZ pinout, 2SK3225-Z-AZ application, or 2SK3225-Z-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 22 mJ), low-input capacitance (C_iss = 2100 pF typ), gate charge profile (Q_G = 45 nC), and body diode reverse recovery performance (t_rr = 60 ns).

Technical Context

This discrete power MOSFET uses planar vertical DMOS structure with integrated gate-source ESD protection diode. Its dual R_DS(on) specification-18 mΩ at 10 V and 27 mΩ at 4.0 V gate drive-enables compatibility with both standard and logic-level controllers. The device operates within a channel temperature range of −55°C to +150°C and is rated for single-pulse avalanche capability up to 15 A and 22 mJ under defined test conditions (V_DD = 30 V, R_G = 25 Ω).

Thermal design relies on case-mounted heatsinking: total power dissipation drops from 40 W at T_C = 25°C to zero at T_C = 160°C, with thermal resistance from channel to case (R_th(ch–C)) specified at 3.13°C/W. Switching behavior is characterized by t_d(on) = 32 ns, t_r = 300 ns, t_d(off) = 110 ns, and t_f = 140 ns under V_DD = 30 V, V_GS = 10 V, and R_G = 10 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for bus voltage in buck/boost converters.
R_DS(on)1	18 mΩ max at V_GS = 10 V / I_D = 17 A - Determines conduction loss in high-efficiency 12–48 V systems operating above 10 A.
I_D(pulse)	±136 A - Supports short-duration surge currents during motor startup or fault transients without thermal runaway.
E_AS	22 mJ - Quantifies ruggedness against inductive switching stress; enables reliable operation in flyback or LLC resonant topologies.
C_iss	2100 pF typ - Impacts gate drive power requirement and switching speed; requires ≥1.5 A peak gate driver for 100 kHz+ operation.
t_rr	60 ns - Defines body diode recovery time; critical for minimizing shoot-through risk in synchronous rectifier configurations.
Q_G	45 nC - Total gate charge determines required gate driver energy and influences turn-on delay and Miller plateau duration.

Pinout & Package

2SK3225-Z-AZ is housed in TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal conduction. Pin 1 is Gate, Pin 2 is Drain (connected to fin), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires external series resistor (typically 5–22 Ω) to damp ringing and limit peak current.
2 (Drain)	High-side current terminal	Electrically connected to metal fin; must be soldered to large copper pour for thermal management and low-inductance high-current path.
3 (Source)	Reference node for gate drive	Serves as return path for load current and reference for gate voltage; layout must minimize source inductance to avoid false turn-on during dI/dt events.

Key Features

Feature	Design Value
Low R_DS(on) at 4.0 V gate drive	27 mΩ max enables direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
Built-in gate protection diode	ESD-rated diode between gate and source reduces need for external TVS in moderate-noise environments.
High single-pulse avalanche energy	22 mJ rating allows safe clamping of inductive kickback in relay drivers and solenoid controls without snubber networks.
Optimized body diode recovery	60 ns t_rr and 95 nC Q_rr support efficient synchronous rectification in 100–500 kHz DC-DC stages.
TO-252 thermal performance	R_th(ch–C) = 3.13°C/W enables 40 W dissipation with modest heatsinking-suitable for board-level thermal management.

Applications

DC-DC Converter Primary Switch	Motor Drive Half-Bridge
Use Scenario: High-efficiency 48 V input buck converter delivering 20 A to FPGA core voltage rail. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; switched at 300 kHz with 50% duty cycle. Use Value: Low R_DS(on) (18 mΩ) minimizes I²R losses (<0.72 W at 20 A), while fast switching (t_f = 140 ns) reduces transition losses in high-frequency designs.	Use Scenario: 24 V brushed DC motor controller driving 15 A stall current in automated gate actuator. IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; commutated at ≤20 kHz with PWM dimming. Use Value: Avalanche ruggedness (E_AS = 22 mJ) absorbs back-EMF spikes during abrupt direction reversal, eliminating need for freewheeling diodes.
Industrial Power Supply SR Control	LED Driver Constant-Current Switch
Use Scenario: Secondary-side synchronous rectifier in 300 W telecom PSU operating at 100 kHz. IC Role / Device Role / Timing Role: Replaces Schottky diode in LLC resonant converter secondary; body diode conducts during dead-time. Use Value: Low V_F(S-D) (0.94 V) and fast t_rr (60 ns) reduce conduction and recovery losses versus 0.5 V Schottky with 100 ns t_rr.	Use Scenario: Constant-current switch regulating 350 mA through 12-series white LED string in streetlight driver. IC Role / Device Role / Timing Role: Linear-mode current regulator operating in analog dimming mode with 100% duty cycle. Use Value: Stable V_GS(off) (1.0–2.0 V) ensures predictable gate threshold across temperature, enabling precise analog current control without feedback loop instability.

DC-DC Converter Primary Switch

Motor Drive Half-Bridge

Use Scenario: High-efficiency 48 V input buck converter delivering 20 A to FPGA core voltage rail.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; switched at 300 kHz with 50% duty cycle.

Use Value: Low R_DS(on) (18 mΩ) minimizes I²R losses (<0.72 W at 20 A), while fast switching (t_f = 140 ns) reduces transition losses in high-frequency designs.

Use Scenario: 24 V brushed DC motor controller driving 15 A stall current in automated gate actuator.

IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; commutated at ≤20 kHz with PWM dimming.

Use Value: Avalanche ruggedness (E_AS = 22 mJ) absorbs back-EMF spikes during abrupt direction reversal, eliminating need for freewheeling diodes.

Industrial Power Supply SR Control

LED Driver Constant-Current Switch

Use Scenario: Secondary-side synchronous rectifier in 300 W telecom PSU operating at 100 kHz.

IC Role / Device Role / Timing Role: Replaces Schottky diode in LLC resonant converter secondary; body diode conducts during dead-time.

Use Value: Low V_F(S-D) (0.94 V) and fast t_rr (60 ns) reduce conduction and recovery losses versus 0.5 V Schottky with 100 ns t_rr.

Use Scenario: Constant-current switch regulating 350 mA through 12-series white LED string in streetlight driver.

IC Role / Device Role / Timing Role: Linear-mode current regulator operating in analog dimming mode with 100% duty cycle.

Use Value: Stable V_GS(off) (1.0–2.0 V) ensures predictable gate threshold across temperature, enabling precise analog current control without feedback loop instability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; C_iss = 1400 pF; TO-220 package; no built-in gate protection diode.	Higher conduction loss; requires external gate protection; unsuitable for space-constrained SMT layouts.	Choose when legacy TO-220 footprint is fixed and gate drive voltage ≥10 V is guaranteed.
STP60NF06	R_DS(on) = 0.018 Ω @ 10 V; Q_G = 70 nC; TO-220; avalanche rated but E_AS not specified in datasheet.	Higher gate charge increases driver complexity; lacks published E_AS value for reliability-critical inductive loads.	Prefer where higher continuous current (60 A) is needed and thermal mass of TO-220 suffices.

Compared with IRFZ44NPBF and STP60NF06, the 2SK3225-Z-AZ offers superior gate-drive flexibility (27 mΩ at 4.0 V), verified avalanche energy (22 mJ), and SMT-compatible TO-252 packaging-making it optimal for compact, logic-level-driven, inductive-switching applications requiring ruggedness and thermal efficiency.

Availability

2SK3225-Z-AZ is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and LED lighting systems requiring stable component supply, long-term lifecycle continuity, and RoHS-compliant sourcing.

Supply support for 2SK3225-Z-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3225-Z-AZ belongs to Renesas' legacy power MOSFET product line targeting high-reliability industrial switching applications-including power conversion, motor control, and solid-state relays-where ruggedness, thermal stability, and gate-drive versatility are essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3225-Z-AZ at 25°C case temperature?

The 2SK3225-Z-AZ has a maximum continuous drain current (I_D(DC)) rating of ±34 A when mounted on a heatsink maintaining T_C = 25°C. This rating assumes proper PCB copper area and thermal vias under the drain pad; derating applies above 25°C per the datasheet's PT vs. TC curve.

Does the 2SK3225-Z-AZ include integrated gate protection, and what does it protect against?

Yes, the 2SK3225-Z-AZ integrates a gate-to-source protection diode to suppress electrostatic discharge (ESD) events. This diode clamps transient voltages exceeding ±20 V (AC) or +20/−10 V (DC), safeguarding the thin gate oxide during handling and board assembly-but external protection remains necessary for system-level overvoltage transients.

Can the 2SK3225-Z-AZ operate reliably with a 5 V gate drive in switching applications?

Yes, the 2SK3225-Z-AZ is fully functional at 5 V gate drive: its R_DS(on)2 is specified at 27 mΩ max with V_GS = 4.0 V and I_D = 17 A. At 5 V, R_DS(on) typically falls between 22–25 mΩ, enabling efficient operation in logic-level systems without gate drivers-though switching speed will be slower than at 10 V.

What is the significance of the "-AZ" suffix in the 2SK3225-Z-AZ part number?

The "-AZ" suffix denotes a Renesas Electronics quality-assured variant compliant with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and meeting RoHS Directive 2011/65/EU requirements. It confirms lead-free terminations, halogen-free molding compound, and full traceability per Renesas' standard industrial-grade qualification flow.

How does the body diode performance of the 2SK3225-Z-AZ compare to discrete Schottky diodes in synchronous rectification?

The 2SK3225-Z-AZ body diode exhibits V_F(S-D) = 0.94 V at 34 A and t_rr = 60 ns-higher forward voltage than typical Schottky diodes (0.4–0.55 V) but significantly faster recovery. In high-frequency synchronous rectifiers (>100 kHz), its lower Q_rr (95 nC) reduces switching loss compared to slower silicon diodes, though Schottky remains preferable where ultra-low V_F dominates efficiency.

2SK3225-Z-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3225-Z-AZ FAQ

1.How can I place an order for 2SK3225-Z-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3225-Z-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3225-Z-AZ reliable?

The price and inventory of 2SK3225-Z-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3225-Z-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3225-Z-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3225-Z-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3225-Z-AZ?

2SK3225-Z-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3225-Z-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3225-Z-AZ?

For technical support, including 2SK3225-Z-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3225-Z-AZ requirements.

6.How does Aetrix verify that 2SK3225-Z-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3225-Z-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3225-Z-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3225-Z-AZ?

All 2SK3225-Z-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3225-Z-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3225-Z-AZ part is unused and in its original packaging.

Return procedure for 2SK3225-Z-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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