Renesas 2SK3229-E

Overview

2SK3229-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and uninterruptible power supplies. It features 80 V V_DSS, 60 A continuous drain current, 6.0 mΩ typical R_DS(on) at V_GS = 10 V, 150 nC total gate charge, and TO-220CFM package with isolated tab. It supports 4 V gate drive compatibility for direct interfacing with 5 V logic.

For engineers reviewing the 2SK3229-E datasheet, 2SK3229-E pinout, 2SK3229-E application, or 2SK3229-E equivalent, key selection criteria include low R_DS(on) at 4 V gate drive, avalanche energy rating (181 mJ), body diode reverse recovery time (80 ns), and thermal performance in high-current switching topologies.

Technical Context

This MOSFET employs planar vertical DMOS structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (1.0–2.5 V) ensures reliable turn-on with standard logic-level drivers, while the 9700 pF input capacitance and 290 pF reverse transfer capacitance support stable operation under high dv/dt conditions.

The device integrates a robust body diode with 1.0 V forward voltage at 60 A and 80 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched topologies. Avalanche-rated design allows single-pulse energy handling up to 181 mJ without failure under specified test conditions (T_ch ≤ 25°C, R_g ≥ 50 Ω).

Key Specifications

Pinout & Package

Package: TO-220CFM (RENESAS code PRSS0003AE-A), thermally isolated metal tab, 3-pin through-hole mounting, 1.9 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IRF1404ZPBF, the 2SK3229-E provides superior voltage margin (80 V), verified avalanche capability (181 mJ), and thermally isolated packaging-critical for high-reliability industrial switching where layout constraints prevent use of insulating pads or bushings.

Availability

2SK3229-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply, long-term production continuity, and RoHS-compliant sourcing.

Supply support for 2SK3229-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3229-E belongs to Renesas' legacy high-speed power MOSFET product line, engineered specifically for ruggedized switching in industrial power conversion and motor control systems demanding reliability under repetitive transient stress.

FAQ

What is the maximum gate-source voltage rating for the 2SK3229-E?

The 2SK3229-E has a maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) to stay within this absolute maximum, especially during fast switching or noisy environments. The 2SK3229-E operates reliably down to 4 V gate drive, making it compatible with standard 5 V logic interfaces without level shifting.

Does the 2SK3229-E have an avalanche rating, and how is it tested?

Yes, the 2SK3229-E is avalanche-rated at 181 mJ per pulse under defined test conditions: channel temperature ≤25°C and gate resistance ≥50 Ω. This rating is measured using unclamped inductive switching (UIS) tests and confirms the device can safely absorb transient energy from inductive loads without failure. The 2SK3229-E's avalanche capability is documented in its Absolute Maximum Ratings table and supports robust operation in motor drive and relay-driving applications.

What is the thermal resistance (R_θJC) of the 2SK3229-E, and how does it affect heatsink selection?

The 2SK3229-E datasheet specifies channel dissipation (P_ch) as 35 W at T_c = 25°C but does not publish R_θJC directly. Based on package construction (TO-220CFM) and thermal mass (1.9 g), typical R_θJC falls between 1.0–1.4 °C/W. For 30 A continuous operation at 8.0 mΩ R_DS(on), conduction loss is ~7.2 W-requiring a heatsink with R_θSA ≤ 3.5 °C/W to maintain T_c ≤ 85°C ambient. The 2SK3229-E's isolated tab simplifies mechanical mounting and improves thermal interface reliability.

Can the 2SK3229-E be used in synchronous rectification topologies?

No-the 2SK3229-E is not optimized for synchronous rectification due to its relatively high body diode forward voltage (1.0 V at 60 A) and 80 ns reverse recovery time. While functional in low-frequency freewheeling roles, its parameters lag dedicated synchronous rectifier MOSFETs (e.g., <0.5 V V_DF, <30 ns t_rr). For high-efficiency synchronous buck or LLC converters, a dedicated low-V_F MOSFET is preferred. The 2SK3229-E remains appropriate for primary-side switching where its 6.0 mΩ R_DS(on) and avalanche rating deliver clear system-level benefits.

Is the 2SK3229-E RoHS compliant and halogen-free?

Yes, the 2SK3229-E is RoHS compliant and halogen-free per Renesas' environmental policy and product declarations. It meets EU Directive 2011/65/EU (RoHS 2) and contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). Halogen content is below 900 ppm chlorine and 900 ppm bromine thresholds. Compliance documentation is available via Renesas' official website and Aetrix Electronics' material declarations portal for the 2SK3229-E.