Renesas 2SK3294-AZ

Overview

2SK3294-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring R_DS(on) = 160 mΩ max at V_GS = 10 V and I_D = 10 A, V_DSS = 250 V, and built-in gate protection diode. It is used in DC/DC converters and actuator drivers where low conduction loss and avalanche ruggedness are required.

For engineers reviewing the 2SK3294-AZ datasheet, 2SK3294-AZ pinout, 2SK3294-AZ application, or 2SK3294-AZ equivalent, this page delivers verified package mapping (TO-220AB), confirmed avalanche rating (E_AS = 150 mJ), thermal resistance (R_th(ch–C) = 1.25 °C/W), gate charge (Q_G = 57 nC), and body diode recovery (t_rr = 340 ns) - all critical for hard-switched industrial power stages.

Technical Context

The 2SK3294-AZ employs a planar vertical DMOS structure optimized for high-voltage operation and robust unclamped inductive switching (UIS). Its gate threshold voltage range (V_GS(off) = 2.5–4.5 V) enables reliable turn-on with standard 10 V logic-level drive, while its low C_iss (1500 pF typ.) and moderate Q_GD/Q_GS ratio (36 nC / 8 nC) support fast, controllable switching in hard-switched topologies.

Thermal design is enabled by direct case-to-heatsink mounting via the drain-connected metal tab (TO-220AB), with R_th(ch–C) = 1.25 °C/W and T_ch max = 150 °C. The integrated source-drain body diode (V_F(S–D) = 1.0 V at I_F = 20 A) supports freewheeling in buck or half-bridge configurations but requires external snubbing under high di/dt conditions due to t_rr = 340 ns.

Key Specifications

Pinout & Package

2SK3294-AZ is supplied in TO-220AB package with isolated mounting tab (drain-connected), enabling mechanical attachment to heatsinks without electrical isolation hardware. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM50FP and IXTP20N50D2, the 2SK3294-AZ offers optimal balance of 250 V rating, 160 mΩ conduction, and 150 mJ avalanche ruggedness - making it uniquely suitable for cost-sensitive, medium-voltage industrial switching where transient robustness is non-negotiable.

Availability

2SK3294-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, motor actuator drivers, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for 2SK3294-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3294-AZ belongs to Renesas' legacy high-voltage power MOSFET family, engineered for rugged industrial switching applications including actuator control, offline SMPS, and uninterruptible power systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3294-AZ?

The 2SK3294-AZ has a maximum continuous drain current (I_D(DC)) of ±20 A at T_C = 25°C. This rating assumes proper heatsinking to maintain case temperature at 25°C; derating applies above that temperature per the datasheet's PT vs. TC curve. For practical designs, sustained operation above 10–12 A typically requires active cooling or significant copper area to manage thermal resistance.

Does the 2SK3294-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3294-AZ integrates a source-drain body diode with V_F(S–D) = 1.0 V at I_F = 20 A and reverse recovery time t_rr = 340 ns under specified test conditions (di/dt = 50 A/µs, V_GS = 0 V). This diode supports freewheeling in inductive loads but is not optimized for high-speed synchronous rectification; external Schottky diodes may be preferred in high-efficiency, high-frequency designs.

What is the gate-to-source voltage rating for the 2SK3294-AZ, and why is it important?

The 2SK3294-AZ has a gate-to-source voltage rating (V_GSS) of ±30 V. Exceeding this rating risks permanent gate oxide damage. The built-in gate-source protection diode helps absorb ESD events, but external gate resistors (typically 10–47 Ω) and clamping (e.g., Zener diodes) are still recommended in noisy industrial environments to prevent overvoltage during fast switching transitions or layout-induced ringing.

How does the avalanche rating of the 2SK3294-AZ impact circuit design?

With a rated single-pulse avalanche energy (E_AS) of 150 mJ and single avalanche current (I_AS) of 20 A, the 2SK3294-AZ can safely absorb inductive turn-off energy without external clamping in many hard-switched applications. This simplifies layout and reduces BOM count, but designers must verify actual circuit energy using the formula E = ½ × L × I² and ensure pulse conditions match the test setup (V_DD = 150 V, R_G = 25 Ω, T_ch = 25°C).

Is the 2SK3294-AZ RoHS compliant, and what is its quality grade?

Yes, the 2SK3294-AZ complies with EU RoHS Directive requirements as confirmed by Renesas' environmental documentation. Its quality grade is "Standard", meaning it is qualified for use in computers, office equipment, communications gear, industrial robots, and similar commercial/industrial applications - but not for automotive safety-critical, medical life-support, or aerospace systems without explicit Renesas approval.