Renesas 2SK3299B-S19-AY

Overview

2SK3299B-S19-AY from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring V_DSS = 600 V, R_DS(on) ≤ 0.75 Ω (V_GS = 10 V, I_D = 5.0 A), Q_G = 30 nC (typ.), and TO-220AB package. It delivers robust avalanche capability (E_AS = 66.7 mJ) and low gate charge for efficient operation in AC adapters and offline SMPS.

For engineers reviewing the 2SK3299B-S19-AY datasheet, 2SK3299B-S19-AY pinout, 2SK3299B-S19-AY application, or 2SK3299B-S19-AY equivalent, key selection criteria include its 600 V blocking voltage, 10 A DC drain current rating, avalanche-rated ruggedness, gate drive compatibility with standard 10 V logic, and thermal performance in TO-220AB with R_th(ch-C) = 1.67 °C/W.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage hard-switching. Its gate oxide design supports ±30 V V_GSS, while the integrated body diode exhibits t_rr = 450 ns and Q_rr = 2700 nC under specified conditions (I_F = 10 A, di/dt = 50 A/μs).

Switching behavior is characterized by t_d(on) = 25 ns, t_r = 10 ns, t_d(off) = 45 ns, and t_f = 11 ns at V_DD = 150 V, I_D = 5.0 A, V_GS = 10 V, and R_G = 10 Ω - enabling high-frequency operation up to several hundred kHz in resonant and quasi-resonant topologies.

Key Specifications

Pinout & Package

2SK3299B-S19-AY is housed in a TO-220AB (MP-25) package with integral metal tab (Drain-connected fin), rated for 75 W total power dissipation at T_C = 25°C. The package weighs 1.9 g and features pure Sn lead plating (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3299B-S19-AY uniquely combines 600 V rating, guaranteed avalanche energy, and low Q_G in a standard TO-220AB - making it optimal for cost-sensitive, rugged offline power supplies where snubberless operation and driver simplicity are critical.

Availability

2SK3299B-S19-AY is available at Aetrix Electronics and suitable for AC adapters, offline flyback converters, and LED driver power stages requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for 2SK3299B-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3299B-S19-AY belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliability-critical switching power supplies in consumer and industrial equipment operating across universal AC mains inputs.

FAQ

What is the maximum continuous drain current rating for the 2SK3299B-S19-AY at case temperature of 25°C?

The 2SK3299B-S19-AY has a maximum continuous drain current (I_D(DC)) rating of ±10 A at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and is derated linearly above 25°C per the published derating curve. Exceeding this current without thermal management risks exceeding the 150°C channel temperature limit and permanent device failure.

Does the 2SK3299B-S19-AY have a specified avalanche energy rating, and how is it tested?

Yes, the 2SK3299B-S19-AY has a single-pulse avalanche energy rating of E_AS = 66.7 mJ, measured under standardized test conditions: V_DD = 150 V, starting T_ch = 25°C, R_G = 25 Ω, and V_GS transitioning from 20 V to 0 V. This rating confirms its ability to withstand unclamped inductive switching events without failure, a key requirement in flyback and forward converter primary switches.

What is the gate-to-source voltage limit for the 2SK3299B-S19-AY, and why is it important?

The 2SK3299B-S19-AY specifies a gate-to-source voltage limit of ±30 V. Exceeding this range risks irreversible damage to the gate oxide layer due to dielectric breakdown. This limit is critical during gate drive design - especially in noisy environments or when using bootstrap circuits - and mandates inclusion of clamping zeners or active gate drivers with rail-to-rail control to ensure V_GS remains within safe bounds throughout all operating conditions of the 2SK3299B-S19-AY.

How does the body diode performance of the 2SK3299B-S19-AY compare to discrete Schottky diodes in secondary-side rectification?

The 2SK3299B-S19-AY's body diode has V_F(S-D) = 0.9 V at I_F = 10 A and t_rr = 450 ns, which is slower and higher forward drop than typical Schottky diodes (e.g., 0.45 V, <50 ns). While not optimized for synchronous rectification, its body diode provides sufficient performance for low-frequency freewheeling paths or emergency conduction in fault conditions - but for high-efficiency secondary-side rectification, a dedicated Schottky or MOSFET-based synchronous solution remains preferred over relying on the 2SK3299B-S19-AY's intrinsic diode.

Is the 2SK3299B-S19-AY RoHS compliant, and what does the "-AY" suffix indicate?

Yes, the 2SK3299B-S19-AY is RoHS compliant, as confirmed by its "Pure Sn (Tin)" lead plating and explicit "Pb-free" note in the Ordering Information section. The "-AY" suffix denotes the Pb-free, tin-plated variant in tube packaging (50 pcs/tube) within the TO-220AB package family - distinguishing it from legacy leaded versions and ensuring compatibility with modern reflow soldering processes required for the 2SK3299B-S19-AY's assembly.