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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3322(1)-ZK-E2-AZ

Name: 2SK3322(1)-ZK-E2-AZ
Brand: Renesas
SKU: 2SK3322(1)-ZK-E2-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3322(1)-ZK-E2-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3322(1)-ZK-E2-AZ.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK3322(1)-ZK-E2-AZ from NEC Electronics Corporation is an N-channel enhancement-mode power MOSFET in TO-263 (MP-25ZK) surface-mount package, rated for 600 V V_DSS, 5.5 A DC drain current, and 2.2 Ω max R_DS(on) at V_GS = 10 V. It delivers low gate charge (15 nC typ.), avalanche capability (4.0 A I_AS, 10.7 mJ E_AS), and is engineered for high-voltage switching power supplies and AC adapters.

For engineers reviewing the 2SK3322(1)-ZK-E2-AZ datasheet, 2SK3322(1)-ZK-E2-AZ pinout, 2SK3322(1)-ZK-E2-AZ application, or 2SK3322(1)-ZK-E2-AZ equivalent, key selection criteria include its 600 V blocking voltage, TO-263 thermal performance (R_th(ch-C) = 1.93 °C/W), body diode reverse recovery (t_rr = 1.6 µs), and gate drive compatibility with ±30 V rating.

Technical Context

This DMOS FET employs a planar vertical structure optimized for high-voltage operation and fast switching. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V logic-level drivers, while the low Q_G/Q_GD ratio (15 nC / 4.4 nC) supports efficient hard-switching in offline SMPS topologies.

The device integrates a built-in gate-source protection diode for ESD robustness and features a body diode with VF(S-D) = 1.0 V at 5.5 A - enabling synchronous rectification support in flyback and resonant converters where controlled reverse recovery is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Enables direct use in universal-input (85–265 VAC) offline power supplies without voltage derating concerns.
R_DS(on) max	2.2 Ω @ V_GS = 10 V, I_D = 2.8 A - Determines conduction loss in continuous conduction mode; impacts thermal design at full load.
Q_G typ	15 nC @ V_DD = 450 V - Defines gate driver power requirement and switching speed trade-off in high-frequency designs.
I_AS	4.0 A single-pulse avalanche - Allows safe operation under inductive switching stress without external snubbers in well-designed layouts.
t_rr	1.6 µs @ I_F = 5.5 A, di/dt = 50 A/µs - Limits switching losses during body diode commutation; critical for quasi-resonant flyback efficiency.
C_iss	550 pF @ V_DS = 10 V - Influences gate drive loop stability and EMI filter sizing in high-dV/dt applications.
P_T2	65 W @ T_C = 25°C - Specifies maximum steady-state power dissipation when mounted on a heatsink; defines thermal interface requirements.

Pinout & Package

2SK3322(1)-ZK-E2-AZ is housed in a TO-263 (MP-25ZK) surface-mount package with exposed drain tab for enhanced thermal conduction. The package features gull-wing leads and a molded plastic body compliant with JEDEC MS-013 standards.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires ≤±30 V bias; low input capacitance enables fast switching with modest driver strength.
2 (Drain)	High-side power terminal	Connected to high-voltage rail (up to 600 V); electrically tied to exposed metal tab for heatsinking and current return path.
3 (Source)	Power reference node	Serves as return path for load current and gate drive reference; must be routed with low inductance to minimize switching noise.
4 (Fin/Drain Tab)	Thermal & electrical drain extension	Exposed copper pad soldered to PCB ground plane or heatsink; carries full drain current and dissipates >90% of junction heat.

Key Features

Feature	Design Value
Low gate charge	15 nC typical enables <100 ns switching transitions with 1 A gate drivers, reducing driver IC cost and board space.
Avalanche-rated operation	Guaranteed single-pulse energy handling (10.7 mJ) allows robustness against transformer leakage inductance spikes without clamping circuits.
Body diode with fast recovery	1.6 µs t_rr and 5.3 µC Q_rr support quasi-resonant and active-clamp topologies requiring controlled diode conduction.
Surface-mount TO-263 package	MP-25ZK footprint provides superior thermal resistance (1.93 °C/W case-to-junction) versus through-hole TO-220, enabling higher power density.
ESD-protected gate	Integrated gate-source Zener diode limits transient overvoltage to ±30 V, reducing need for external gate protection in moderate-noise environments.

Applications

AC-DC Adapter Primary Switch	Industrial SMPS Main Switch
Use Scenario: 65 W universal-input AC adapter operating in discontinuous conduction mode (DCM) flyback topology. IC Role / Device Role / Timing Role: High-side primary-side switching element controlling energy transfer via transformer; switched at 65 kHz with zero-voltage switching assist. Use Value: 600 V rating accommodates reflected output voltage plus line surge margin; low Q_G minimizes gate drive loss at high frequency.	Use Scenario: 300 W industrial open-frame power supply using active-clamp forward converter. IC Role / Device Role / Timing Role: Main power switch synchronizing with clamp FET; subjected to repetitive 400 V drain stress and 10 A peak current pulses. Use Value: Avalanche capability absorbs clamp circuit transients; TO-263 thermal performance sustains 65 W dissipation without oversized heatsink.
LED Driver High-Voltage Buck	UPS Inverter Half-Bridge Leg
Use Scenario: Constant-current LED driver for street lighting, accepting 277 VAC input and driving 48 V/1.5 A string. IC Role / Device Role / Timing Role: Buck regulator switch operating in continuous conduction mode at 100 kHz; handles 400 V transient surges. Use Value: 2.2 Ω R_DS(on) limits conduction loss to <1.5 W at full load; body diode t_rr prevents shoot-through during dead-time.	Use Scenario: 1 kVA online UPS inverter stage converting 380 VDC bus to 230 VAC output using two-level topology. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutated at 16 kHz with 5.5 A RMS current. Use Value: Gate voltage rating (±30 V) supports isolated gate drivers with bootstrap supply; low C_iss reduces EMI generation during fast dV/dt transitions.

AC-DC Adapter Primary Switch

Industrial SMPS Main Switch

Use Scenario: 65 W universal-input AC adapter operating in discontinuous conduction mode (DCM) flyback topology.

IC Role / Device Role / Timing Role: High-side primary-side switching element controlling energy transfer via transformer; switched at 65 kHz with zero-voltage switching assist.

Use Value: 600 V rating accommodates reflected output voltage plus line surge margin; low Q_G minimizes gate drive loss at high frequency.

Use Scenario: 300 W industrial open-frame power supply using active-clamp forward converter.

IC Role / Device Role / Timing Role: Main power switch synchronizing with clamp FET; subjected to repetitive 400 V drain stress and 10 A peak current pulses.

Use Value: Avalanche capability absorbs clamp circuit transients; TO-263 thermal performance sustains 65 W dissipation without oversized heatsink.

LED Driver High-Voltage Buck

UPS Inverter Half-Bridge Leg

Use Scenario: Constant-current LED driver for street lighting, accepting 277 VAC input and driving 48 V/1.5 A string.

IC Role / Device Role / Timing Role: Buck regulator switch operating in continuous conduction mode at 100 kHz; handles 400 V transient surges.

Use Value: 2.2 Ω R_DS(on) limits conduction loss to <1.5 W at full load; body diode t_rr prevents shoot-through during dead-time.

Use Scenario: 1 kVA online UPS inverter stage converting 380 VDC bus to 230 VAC output using two-level topology.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutated at 16 kHz with 5.5 A RMS current.

Use Value: Gate voltage rating (±30 V) supports isolated gate drivers with bootstrap supply; low C_iss reduces EMI generation during fast dV/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 1.2 Ω, Q_G = 22 nC, TO-220FP package	Higher current rating but higher gate charge and lower avalanche energy (E_AS = 5.5 mJ)	Preferred where lower R_DS(on) dominates over gate drive loss and avalanche margin is secondary.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220 package, no avalanche rating	Lower voltage rating precludes use in 600 V applications; unsuitable for offline SMPS primary side	Only viable in low-voltage DC-DC stages where 600 V capability is unnecessary.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3322(1)-ZK-E2-AZ offers balanced trade-offs for 600 V primary-side switching: superior avalanche ruggedness over ST's part and essential voltage rating missing in IXYS's low-V_DS device - making it uniquely suitable for cost-sensitive, thermally constrained offline power designs.

Availability

2SK3322(1)-ZK-E2-AZ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS inverters requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for 2SK3322(1)-ZK-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NEC Electronics Corporation was a Japanese semiconductor manufacturer specializing in analog, power, and mixed-signal ICs before merging into Renesas Electronics in 2010.

The 2SK3322 series belongs to NEC's high-voltage discrete power MOSFET product line, designed specifically for reliability-critical offline switching applications demanding avalanche tolerance and stable R_DS(on) over temperature.

FAQ

What is the maximum continuous drain current rating for the 2SK3322(1)-ZK-E2-AZ at 25°C case temperature?

The 2SK3322(1)-ZK-E2-AZ has a maximum continuous drain current (I_D(DC)) rating of ±5.5 A at T_C = 25°C. This value assumes proper heatsinking and is limited by package thermal resistance (R_th(ch-C) = 1.93 °C/W). At elevated case temperatures, the current must be derated per the datasheet's forward-bias SOA curve.

Does the 2SK3322(1)-ZK-E2-AZ have an integrated gate protection diode?

Yes, the 2SK3322(1)-ZK-E2-AZ includes an internal gate-source Zener diode for ESD protection, rated for ±30 V. However, the datasheet explicitly states that external protection remains necessary if voltages exceeding this rating may occur in the application - such as from inductive kickback or poor layout-induced ringing.

What is the typical gate charge (Q_G) of the 2SK3322(1)-ZK-E2-AZ and how does it affect switching performance?

The 2SK3322(1)-ZK-E2-AZ has a typical total gate charge (Q_G) of 15 nC under V_DD = 450 V, V_GS = 10 V, and I_D = 5.5 A conditions. This low Q_G enables faster turn-on/turn-off transitions with modest gate drivers, reducing switching losses - especially beneficial in high-frequency flyback and resonant converters where driver efficiency matters.

Can the 2SK3322(1)-ZK-E2-AZ be used in avalanche mode repeatedly?

No - the 2SK3322(1)-ZK-E2-AZ is rated for single-pulse avalanche only (I_AS = 4.0 A, E_AS = 10.7 mJ). Repetitive avalanche operation is not guaranteed and may cause cumulative degradation. Designers must ensure circuit conditions (e.g., inductive energy, V_DD, R_G) stay within single-pulse limits or implement clamping to avoid reliance on avalanche conduction.

What is the body diode forward voltage (V_F(S-D)) of the 2SK3322(1)-ZK-E2-AZ and why does it matter?

The body diode forward voltage of the 2SK3322(1)-ZK-E2-AZ is 1.0 V at I_F = 5.5 A and V_GS = 0 V. This parameter directly impacts conduction loss during freewheeling phases in buck, flyback, and half-bridge topologies - especially where the MOSFET's intrinsic diode conducts before synchronous rectification takes over.

2SK3322(1)-ZK-E2-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3322(1)-ZK-E2-AZ FAQ

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All 2SK3322(1)-ZK-E2-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3322(1)-ZK-E2-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3322(1)-ZK-E2-AZ?

All 2SK3322(1)-ZK-E2-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3322(1)-ZK-E2-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3322(1)-ZK-E2-AZ part is unused and in its original packaging.

Return procedure for 2SK3322(1)-ZK-E2-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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