Renesas 2SK3325B-S19-AY

Overview

2SK3325B-S19-AY from Renesas Electronics is an N-channel power MOSFET in TO-220AB package, designed for high-voltage switching applications including AC adapters and offline SMPS. It delivers 500 V V_DSS, 0.85 Ω R_DS(on) at V_GS = 10 V and I_D = 5.0 A, 20 nC total gate charge, and rated for 85 W at T_C = 25°C.

For engineers reviewing the 2SK3325B-S19-AY datasheet, 2SK3325B-S19-AY pinout, 2SK3325B-S19-AY application, or 2SK3325B-S19-AY equivalent, key selection criteria include avalanche energy rating (10.7 mJ), low Q_G/Q_GD ratio for fast switching, body diode reverse recovery performance (t_rr = 440 ns), and thermal resistance (R_th(ch-C) = 1.47 °C/W).

Technical Context

This discrete MOSFET uses a planar vertical DMOS structure optimized for high-voltage hard-switching. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (1270 pF) and ultra-low C_rss (6 pF) minimize Miller effect and enable clean turn-off under high dV/dt conditions.

The device integrates an intrinsic body diode with VF(S-D) = 0.98–1.5 V at I_F = 10 A and exhibits controlled reverse recovery (Q_rr = 2000 nC, t_rr = 440 ns), making it suitable for freewheeling and synchronous rectification roles in flyback and forward converters where diode conduction occurs during dead time.

Key Specifications

Pinout & Package

2SK3325B-S19-AY is housed in a TO-220AB (MP-25) package with integral metal tab acting as Drain terminal and electrically isolated mounting surface. The package weighs 1.9 g and features Sn-plated leads compliant with Pb-free requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP5NK50ZFP and IXTP50N10P, the 2SK3325B-S19-AY uniquely balances 500 V rating, sub-1 Ω R_DS(on), and low Q_G in a non-isolated TO-220AB package - making it optimal for cost-sensitive, medium-power offline SMPS where thermal coupling to heatsink is acceptable and voltage margin is critical.

Availability

2SK3325B-S19-AY is available at Aetrix Electronics and suitable for AC adapters, industrial flyback converters, and LED driver bulk switches requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for 2SK3325B-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3325B-S19-AY belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliability and efficiency in offline AC/DC conversion systems targeting industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current rating for the 2SK3325B-S19-AY at 25°C case temperature?

The 2SK3325B-S19-AY has a DC drain current rating of ±10 A at T_C = 25°C. This value assumes adequate heatsinking to maintain case temperature at 25°C; actual usable current must be derated per the Total Power Dissipation vs. Case Temperature curve in the datasheet, dropping to ~5 A at T_C = 100°C. The 2SK3325B-S19-AY is not rated for 10 A continuous operation without forced cooling or large copper area.

Does the 2SK3325B-S19-AY have avalanche capability, and how is it specified?

Yes, the 2SK3325B-S19-AY is fully rated for single-pulse avalanche operation with I_AS = 10 A and E_AS = 10.7 mJ under defined test conditions (V_DD = 150 V, R_G = 25 Ω, starting T_ch = 25°C). This rating is measured and guaranteed per JEDEC standards, allowing the 2SK3325B-S19-AY to safely absorb inductive energy in clamp or flyback circuits without external protection components.

What is the gate-to-source voltage rating for the 2SK3325B-S19-AY, and why does it matter in circuit design?

The 2SK3325B-S19-AY has a gate-to-source voltage rating of ±30 V. This means the gate oxide can withstand up to +30 V for turn-on and −30 V for safe reverse bias without degradation. Exceeding this rating risks permanent gate oxide breakdown. In practice, this allows use of standard 12–15 V gate drivers with margin for ringing, but requires clamping (e.g., Zener diodes) if driving from higher-voltage sources or in noisy environments. The 2SK3325B-S19-AY's ±30 V rating exceeds typical 20 V limits of many logic-level MOSFETs.

How does the body diode performance of the 2SK3325B-S19-AY affect its use in flyback or LLC converters?

The 2SK3325B-S19-AY's body diode has VF(S-D) = 0.98–1.5 V at I_F = 10 A and t_rr = 440 ns with Q_rr = 2000 nC. In flyback converters, this enables predictable freewheeling during MOSFET off-time but introduces measurable recovery loss. In LLC resonant converters, the relatively soft recovery helps suppress voltage spikes during zero-current switching transitions. Designers must account for this Q_rr in efficiency calculations and layout - the 2SK3325B-S19-AY is not optimized for synchronous rectification but performs reliably as a self-commutating switch.

Is the 2SK3325B-S19-AY RoHS-compliant, and what does the "-AY" suffix indicate?

Yes, the 2SK3325B-S19-AY is RoHS-compliant: the "-AY" suffix explicitly denotes Pb-free lead plating (pure Sn), and the datasheet confirms "This product does not contain Pb in external electrode." The "S19" portion identifies the TO-220AB (MP-25) package variant with tube packaging (50 pcs/tube). All Renesas documentation treats 2SK3325B-S19-AY as a fully qualified, production-ready part meeting EU RoHS Directive requirements.