Renesas 2SK3367-AZ

Overview

2SK3367-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency DC/DC converter applications in notebook computers. It features a 30 V drain-source voltage rating, 36 A continuous drain current, 9.0 mΩ maximum R_DS(on) at V_GS = 10 V, built-in gate protection diode, and TO-252 (MP-3Z) surface-mount package.

For engineers reviewing the 2SK3367-AZ datasheet, 2SK3367-AZ pinout, 2SK3367-AZ application, or 2SK3367-AZ equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, fast switching with 75 ns turn-on delay, body diode reverse recovery time of 45 ns, thermal resistance of 125 °C/W (ch-to-ambient), and suitability for synchronous buck converter high-side or low-side switching.

Technical Context

The 2SK3367-AZ operates as a logic-level-compatible N-channel enhancement-mode MOSFET optimized for high-frequency switching in portable computing power stages. Its gate threshold voltage range (1.5–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V controller outputs, while its low C_iss (2800 pF typ.) and Q_G (49 nC) support efficient gate driving at >500 kHz.

Thermal design is constrained by its 1.0 W ambient-rated power dissipation and 125 °C/W channel-to-ambient thermal resistance, requiring PCB copper area and thermal vias for sustained 36 A DC operation. The integrated source-drain body diode (V_F = 0.95 V at 36 A) and 50 nC Q_rr are specified for synchronous rectification or freewheeling roles in non-isolated converters.

Key Specifications

Pinout & Package

2SK3367-AZ uses the TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal conduction. Pin 1 is Gate, Pin 2 is Drain (connected to fin), Pin 3 is Source. The package supports reflow soldering and requires thermal pad grounding to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with 2SK3367-AZ, both alternatives offer smaller packages but significantly higher on-resistance and lower current capability-making them unsuitable for primary DC/DC switching in notebook computers where 36 A DC and sub-12 mΩ R_DS(on) are required for thermal and efficiency targets.

Availability

2SK3367-AZ is available at Aetrix Electronics and suitable for notebook computer power supplies, USB-C PD input stages, and industrial auxiliary SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 2SK3367-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for automotive, industrial, and consumer markets.

The 2SK3367-AZ belongs to Renesas' legacy power MOSFET product line targeting high-efficiency, high-density DC/DC conversion in portable computing systems-designed specifically for synchronous buck topologies with stringent thermal and switching loss constraints.

FAQ

What is the maximum continuous drain current rating for the 2SK3367-AZ at 25°C ambient?

The 2SK3367-AZ has a maximum continuous drain current (I_D(DC)) rating of ±36 A at T_C = 25°C. However, its ambient-rated current is limited to approximately 1.0 A due to the 125 °C/W channel-to-ambient thermal resistance. Real-world operation at high current requires PCB thermal management to maintain T_ch ≤ 150°C. The 2SK3367-AZ must be mounted on a thermally enhanced pad to achieve rated current performance.

Does the 2SK3367-AZ have a built-in gate protection diode, and how does it affect circuit design?

Yes, the 2SK3367-AZ integrates a gate-to-source protection diode to guard against ESD events. This reduces-but does not eliminate-the need for external gate protection. Renesas explicitly states that an additional external protection circuit remains necessary if voltages exceeding ±20 V may appear on the gate. Therefore, the 2SK3367-AZ still requires careful gate drive layout and clamping in noisy environments, especially in notebook systems with shared power rails.

What is the typical reverse recovery time (t_rr) of the body diode in the 2SK3367-AZ, and why is it important?

The 2SK3367-AZ body diode has a typical reverse recovery time (t_rr) of 45 ns under test conditions of I_F = 36 A and di/dt = 100 A/μs. This parameter is critical when the device operates as a low-side synchronous rectifier, because shorter t_rr reduces switching loss and voltage overshoot during commutation. The 45 ns t_rr allows the 2SK3367-AZ to outperform many general-purpose MOSFETs in high-frequency buck converters where body diode conduction occurs during dead time.

Can the 2SK3367-AZ be used as a direct replacement for the 2SK3367 in TO-251 package?

No-the 2SK3367-AZ uses the TO-252 (MP-3Z) package, while the base 2SK3367 uses TO-251 (MP-3). Though electrically identical, their footprints, thermal pad layouts, and mounting mechanics differ. The TO-252 variant offers improved thermal performance in surface-mount applications but requires PCB redesign. The 2SK3367-AZ is not a drop-in replacement; board layout changes are mandatory to accommodate the wider lead spacing and different drain tab geometry.

What gate drive voltage is required to fully enhance the 2SK3367-AZ for low R_DS(on) operation?

The 2SK3367-AZ achieves its lowest R_DS(on) (7.3 mΩ typ., 9.0 mΩ max) at V_GS = 10 V. At V_GS = 4.5 V, R_DS(on) rises to 9.0–12.0 mΩ-still sufficient for many 5 V gate-drive applications. Its gate threshold voltage (V_GS(off)) ranges from 1.5 V to 2.5 V, ensuring reliable turn-on with 3.3 V logic. Thus, the 2SK3367-AZ supports both 3.3 V, 5 V, and 10 V gate drive systems without level shifters.