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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3367-Z-E2-AZ

Name: 2SK3367-Z-E2-AZ
Brand: Renesas
SKU: 2SK3367-Z-E2-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3367-Z-E2-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3367-Z-E2-AZ.pdf

Description:: SMALL SIGNAL N-CHANNEL MOSFET

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Product details

Overview

2SK3367-Z-E2-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency DC/DC converters in notebook computers, featuring R_DS(on) = 9.0 mΩ max at V_GS = 10 V / I_D = 18 A, V_DSS = 30 V, I_D(DC) = ±36 A, and built-in gate protection diode. It uses TO-252 (MP-3Z) surface-mount packaging for thermal performance in compact power stages.

For engineers reviewing the 2SK3367-Z-E2-AZ datasheet, 2SK3367-Z-E2-AZ pinout, 2SK3367-Z-E2-AZ application, or 2SK3367-Z-E2-AZ equivalent, this page delivers verified electrical specs, switching timing data (t_d(on) = 75 ns, t_f = 210 ns), thermal resistance (R_th(ch-A) = 125 °C/W), gate charge (Q_G = 49 nC), and real-world use context for synchronous buck converter design.

Technical Context

The 2SK3367-Z-E2-AZ operates as a low-voltage, high-current switching element in synchronous rectification topologies. Its low R_DS(on) at 4.5 V gate drive (12.0 mΩ max) enables efficient operation with standard logic-level controllers, while its C_iss = 2800 pF (typ) and Q_GD = 14 nC support fast, controlled turn-on/turn-off transitions.

Thermal design is enabled by R_th(ch-C) = 3.13 °C/W and a rated channel temperature of 150 °C. The integrated gate protection diode provides ESD immunity, though external clamping remains recommended per datasheet guidance for overvoltage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage compatible with 5 V–12 V input rails in notebook DC/DC converters.
R_DS(on) @ 10 V	9.0 mΩ max - Enables <1 W conduction loss at 36 A DC, critical for high-current CPU/GPU core power stages.
Q_G	49 nC - Determines gate driver current requirement; supports ~1 MHz switching with moderate gate resistance.
t_d(on)/t_f	75 ns / 210 ns - Fast switching minimizes overlap losses in synchronous buck configurations.
C_iss	2800 pF typ - Low input capacitance reduces gate drive power and improves control loop stability.
T_ch max	150 °C - Specifies absolute maximum junction temperature for thermal margin calculation in PCB layout.

Pinout & Package

2SK3367-Z-E2-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1 = Gate, Pin 2 = Drain (connected to fin), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives PWM signal; requires ≥4.5 V for full enhancement; protected by internal Zener diode.
2 (Drain)	High-side switch output	Connected to input rail and heatsink via exposed pad; carries full load current and switching node voltage.
3 (Source)	Power return reference	Serves as local ground reference for gate drive; connects to low-side FET source or inductor node in synchronous buck.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Specified R_DS(on) ≤ 12.0 mΩ at V_GS = 4.5 V - eliminates need for gate boosters in 5 V controller designs.
Low gate charge	Q_G = 49 nC - reduces driver power consumption and enables higher-frequency operation without excessive heat.
Integrated gate protection	Built-in gate-source Zener diode - suppresses ESD events up to ±20 V, simplifying board-level protection.
Optimized for synchronous rectification	Body diode t_rr = 45 ns and Q_rr = 50 nC - minimizes reverse recovery losses when used as low-side switch.

Applications

Notebook CPU Core Power Supply	GPU Voltage Regulator Module (VRM)
Use Scenario: High-current, multi-phase buck converter delivering 0.8–1.5 V at up to 100 A to modern mobile CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch handling continuous 36 A DC current with fast switching to minimize conduction and switching losses. Use Value: 9.0 mΩ R_DS(on) at 10 V ensures <1.2 W conduction loss at full load, directly improving system efficiency and thermal headroom.	Use Scenario: Compact, high-density VRM on discrete GPU modules requiring rapid transient response and minimal footprint. IC Role / Device Role / Timing Role: High-side switching FET in 30 V input stage, leveraging 30 V V_DSS rating and 144 A pulse capability for peak current handling. Use Value: 2800 pF C_iss and 75 ns t_d(on) enable clean, low-jitter switching at 500 kHz–1 MHz, supporting tight regulation under dynamic GPU loads.
USB-C PD Power Delivery Sink	Industrial DC/DC Point-of-Load Converter
Use Scenario: Secondary-side synchronous rectifier in 20 V–28 V USB-C PD sink applications with programmable voltage negotiation. IC Role / Device Role / Timing Role: N-channel FET configured in common-source topology, driven by dedicated SR controller with adaptive timing. Use Value: 45 ns body diode t_rr and 0.95 V V_F(S-D) reduce dead-time losses and improve light-load efficiency beyond Schottky alternatives.	Use Scenario: 24 V input to 3.3 V/5 V point-of-load regulator in factory automation I/O modules with space-constrained PCBs. IC Role / Device Role / Timing Role: Primary switching transistor in isolated or non-isolated buck converter operating at ambient temperatures up to 85 °C. Use Value: R_th(ch-A) = 125 °C/W and T_stg = –55 to +150 °C allow reliable operation without forced air, supporting fanless industrial enclosures.

Notebook CPU Core Power Supply

GPU Voltage Regulator Module (VRM)

Use Scenario: High-current, multi-phase buck converter delivering 0.8–1.5 V at up to 100 A to modern mobile CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch handling continuous 36 A DC current with fast switching to minimize conduction and switching losses.

Use Value: 9.0 mΩ R_DS(on) at 10 V ensures <1.2 W conduction loss at full load, directly improving system efficiency and thermal headroom.

Use Scenario: Compact, high-density VRM on discrete GPU modules requiring rapid transient response and minimal footprint.

IC Role / Device Role / Timing Role: High-side switching FET in 30 V input stage, leveraging 30 V V_DSS rating and 144 A pulse capability for peak current handling.

Use Value: 2800 pF C_iss and 75 ns t_d(on) enable clean, low-jitter switching at 500 kHz–1 MHz, supporting tight regulation under dynamic GPU loads.

USB-C PD Power Delivery Sink

Industrial DC/DC Point-of-Load Converter

Use Scenario: Secondary-side synchronous rectifier in 20 V–28 V USB-C PD sink applications with programmable voltage negotiation.

IC Role / Device Role / Timing Role: N-channel FET configured in common-source topology, driven by dedicated SR controller with adaptive timing.

Use Value: 45 ns body diode t_rr and 0.95 V V_F(S-D) reduce dead-time losses and improve light-load efficiency beyond Schottky alternatives.

Use Scenario: 24 V input to 3.3 V/5 V point-of-load regulator in factory automation I/O modules with space-constrained PCBs.

IC Role / Device Role / Timing Role: Primary switching transistor in isolated or non-isolated buck converter operating at ambient temperatures up to 85 °C.

Use Value: R_th(ch-A) = 125 °C/W and T_stg = –55 to +150 °C allow reliable operation without forced air, supporting fanless industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	V_DSS = 30 V, R_DS(on) = 8.0 mΩ @ 10 V, TO-220 package - lower R_DS(on) but through-hole, higher R_th(ch-A).	Not suitable for space-constrained SMT layouts; better for prototyping or low-volume thermal testing.	Select when board-level thermal mass permits TO-220 mounting and lowest possible conduction loss is prioritized over footprint.
Si7850DP-T1-GE3	V_DSS = 30 V, R_DS(on) = 7.5 mΩ @ 10 V, PowerPAK SO-8 - smaller footprint, lower Q_G (36 nC), no integrated gate protection.	Lacks built-in gate Zener; requires external ESD protection; optimized for ultra-high-frequency (>2 MHz) operation.	Prefer for high-density, high-frequency designs where gate drive simplicity and layout area are critical, and external protection is acceptable.

Compared with IRL3803PbF and Si7850DP-T1-GE3, the 2SK3367-Z-E2-AZ offers balanced performance: TO-252 thermal efficiency, integrated gate protection for robustness, and verified 4.5 V drive capability-making it optimal for production-grade notebook and industrial DC/DC converters where reliability and manufacturability are prioritized over marginal R_DS(on) gains.

Availability

2SK3367-Z-E2-AZ is available at Aetrix Electronics and suitable for notebook computer power supplies, GPU VRMs, and industrial point-of-load converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 2SK3367-Z-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The 2SK3367-Z-E2-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC/DC conversion in portable computing systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3367-Z-E2-AZ?

The 2SK3367-Z-E2-AZ has a maximum continuous drain current (I_D(DC)) of ±36 A at T_C = 25 °C. This rating assumes proper PCB copper area and thermal vias to maintain case temperature; derating applies above 25 °C per the datasheet's thermal resistance curve (R_th(ch-C) = 3.13 °C/W). Real-world designs must verify thermal performance using actual board layout and ambient conditions before finalizing the 2SK3367-Z-E2-AZ selection.

Does the 2SK3367-Z-E2-AZ include built-in gate protection?

Yes, the 2SK3367-Z-E2-AZ integrates a gate-to-source Zener diode for ESD protection, rated to ±20 V per the absolute maximum ratings. However, the datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, while the internal diode guards against typical handling ESD, transient overvoltage events (e.g., inductive kickback) still require external clamping-confirming that the 2SK3367-Z-E2-AZ is not a fully self-protected device in harsh electrical environments.

Can the 2SK3367-Z-E2-AZ be driven directly by a 3.3 V microcontroller GPIO?

No-the 2SK3367-Z-E2-AZ is not guaranteed to fully enhance at 3.3 V. Its R_DS(on) is specified only down to V_GS = 4.0 V (14.0 mΩ max), and gate threshold voltage (V_GS(off)) ranges from 1.5 V to 2.5 V. At 3.3 V, the device will operate in linear mode with significantly elevated R_DS(on), causing excessive heat and potential failure. The 2SK3367-Z-E2-AZ requires ≥4.5 V gate drive for reliable switching; a level-shifting gate driver or dedicated MOSFET driver IC is mandatory when interfacing with 3.3 V logic.

What is the safe operating area (SOA) limitation for pulsed operation of the 2SK3367-Z-E2-AZ?

The 2SK3367-Z-E2-AZ supports pulsed drain current up to ±144 A with PW ≤ 10 μs and duty cycle ≤ 1%, as defined in the Absolute Maximum Ratings. Its forward-bias SOA curve shows that at V_DS = 15 V, the device sustains ≤100 A for 100 μs and ≤40 A for 10 ms-limited by both R_DS(on) conduction and thermal inertia. Exceeding these boundaries risks thermal runaway or bond-wire fusing; always validate pulse stress using the SOA graph in the D14257EJ4V0DS datasheet before deploying the 2SK3367-Z-E2-AZ in high-pulse applications.

Is the 2SK3367-Z-E2-AZ compliant with RoHS and lead-free assembly requirements?

Yes, the 2SK3367-Z-E2-AZ is RoHS-compliant and qualified for lead-free reflow soldering per J-STD-020. The "-E2" suffix denotes tape-and-reel packaging compatible with automated SMT placement, and the "-AZ" suffix indicates lead-free (Pb-free) termination finish. Renesas confirms environmental compliance in accordance with EU RoHS Directive 2011/65/EU, and the device meets MSL Level 1 moisture sensitivity-requiring no baking prior to assembly. Always verify lot-specific certificates of compliance via Renesas' material declaration portal when qualifying the 2SK3367-Z-E2-AZ for production.

2SK3367-Z-E2-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3367-Z-E2-AZ FAQ

1.How can I place an order for 2SK3367-Z-E2-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3367-Z-E2-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3367-Z-E2-AZ reliable?

The price and inventory of 2SK3367-Z-E2-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3367-Z-E2-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3367-Z-E2-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3367-Z-E2-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3367-Z-E2-AZ?

2SK3367-Z-E2-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3367-Z-E2-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3367-Z-E2-AZ?

For technical support, including 2SK3367-Z-E2-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3367-Z-E2-AZ requirements.

6.How does Aetrix verify that 2SK3367-Z-E2-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3367-Z-E2-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3367-Z-E2-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3367-Z-E2-AZ?

All 2SK3367-Z-E2-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3367-Z-E2-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3367-Z-E2-AZ part is unused and in its original packaging.

Return procedure for 2SK3367-Z-E2-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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