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Renesas 2SK3402-ZK-E1-AY
- Part No.:
- 2SK3402-ZK-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SK3402-ZK-E1-AY.pdf
- Description:
- 2SK3402-ZK-E1-AY - SWITCHING N-C
- Quantity:
- Payment:
- Shipping:
Inventory:17,500
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Product details
Overview
2SK3402-ZK-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits, featuring RDS(on) = 15 mΩ max at VGS = 10 V / ID = 18 A, 60 V VDSS, and TO-252 (MP-3Z) surface-mount package with integrated gate protection diode.
For engineers reviewing the 2SK3402-ZK-E1-AY datasheet, 2SK3402-ZK-E1-AY pinout, 2SK3402-ZK-E1-AY application, or 2SK3402-ZK-E1-AY equivalent, this page delivers verified electrical specs, thermal derating curves, avalanche energy rating (EAS = 123 mJ), switching timing (td(off) = 170 ns), and body diode recovery (trr = 48 ns) - all critical for hard-switched SMPS and H-bridge designs.
Technical Context
This device operates as a unidirectional, enhancement-mode N-channel silicon MOSFET with a built-in gate-source ESD protection diode. Its low RDS(on) and moderate Ciss (3200 pF typ.) support efficient 100 kHz–500 kHz switching in synchronous rectification and DC-DC converters.
The 2SK3402-ZK-E1-AY supports single-pulse avalanche operation up to IAS = 35 A and EAS = 123 mJ under defined test conditions (VDD = 30 V, RG = 25 Ω, Tch = 25°C), enabling robustness against inductive turn-off transients in relay drivers and solenoid controls.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with margin. |
| RDS(on)1 | 15 mΩ max @ VGS = 10 V, ID = 18 A - Enables <1.5 W conduction loss at 30 A continuous current. |
| ID(DC) | ±36 A @ TC = 25°C - Requires heatsinking above ~10 A ambient operation due to low PT2 = 1.0 W at TA. |
| Ciss | 3200 pF typ. @ VDS = 10 V - Determines gate drive strength requirement; ~61 nC total gate charge. |
| tr/tf | 310 ns / 180 ns @ VGS = 10 V, RG = 10 Ω - Defines minimum practical switching frequency before excessive switching loss. |
| EAS | 123 mJ single-pulse - Allows safe clamping of inductive kickback in motor gate drivers without external snubbers. |
| VF(S-D) | 1.0 V @ IF = 36 A, VGS = 0 V - Body diode forward drop impacts reverse conduction loss in half-bridge freewheeling. |
Pinout & Package
2SK3402-ZK-E1-AY uses the TO-252 (MP-3Z) surface-mount package - a 3-lead, exposed-drain thermal pad variant optimized for PCB heat spreading and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives logic-level or driver-stage voltage; requires ≤±20 V gate-source swing; protected by internal Zener diode. |
| 2 (Drain) | High-side power node | Connected to load supply rail; electrically tied to exposed metal tab (fin) for thermal conduction to PCB copper. |
| 3 (Source) | Power return reference | Serves as common return path for load current and gate drive reference; defines VGS control voltage baseline. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4 V gate drive | RDS(on)2 = 22 mΩ max @ VGS = 4.0 V - Enables direct microcontroller GPIO driving without level-shifting in low-voltage control stages. |
| Built-in gate protection diode | Integrated Zener between gate and source - suppresses ESD events up to ±20 V but does not replace external TVS for system-level surge immunity. |
| High avalanche energy rating | EAS = 123 mJ - Permits reliable operation in inductive switching applications without external clamping components. |
| Fast body diode recovery | trr = 48 ns @ di/dt = 100 A/μs - Reduces cross-conduction loss and ringing in synchronous rectifier and half-bridge topologies. |
| Thermal resistance (ch-A) | Rth(ch-A) = 125 °C/W - Dictates maximum allowable ambient temperature for 1.0 W dissipation; requires thermal vias under drain pad. |
Applications
| Industrial DC Motor Drivers | 48 V Telecom Power Supplies |
|---|---|
|
Use Scenario: Driving brushed DC motors in factory automation actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side switching element handling peak currents ≥30 A during stall conditions. Use Value: Low RDS(on) minimizes I²R heating during extended stall; avalanche rating absorbs back-EMF spikes without failure. |
Use Scenario: Synchronous rectification in isolated 48 V input / 12 V output telecom DC-DC modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency at full load. Use Value: 15 mΩ RDS(on) cuts conduction loss by >40% vs. 40 V Schottky; fast trr prevents shoot-through in phase-shifted topologies. |
| Automated Test Equipment (ATE) Load Switches | UPS Inverter Half-Bridge Legs |
|
Use Scenario: Programmable electronic loads simulating battery discharge profiles in battery testers. IC Role / Device Role / Timing Role: Precision current-sinking element controlled via DAC-driven gate voltage. Use Value: Linear-region RDS(on) stability enables accurate current regulation; TO-252 thermal pad ensures stable ΔT across duty cycles. |
Use Scenario: High-side switch in 200–500 W offline UPS inverters converting 360 V DC bus to 120/230 V AC. IC Role / Device Role / Timing Role: Fast-turning power switch operating at 20–50 kHz with active gate control. Use Value: 170 ns td(off) and 180 ns tf reduce dead-time losses; 60 V rating accommodates 360 V bus with 2× safety margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPBF | RDS(on) = 28 mΩ @ VGS = 10 V; TO-220 package; no integrated gate protection diode. | Higher conduction loss; through-hole mounting only; requires external gate clamp. | Choose when legacy TO-220 layout exists and gate drive circuitry already includes discrete protection. |
| STP60NF06 | RDS(on) = 14 mΩ @ VGS = 10 V; TO-220; higher QG = 95 nC; no avalanche rating specified. | Better RDS(on) but slower switching; lacks documented EAS - unsuitable for unclamped inductive loads. | Prefer for low-frequency, high-efficiency linear regulators where avalanche stress is absent. |
Compared with IRFZ44NPBF and STP60NF06, the 2SK3402-ZK-E1-AY offers superior thermal performance in surface-mount layouts, guaranteed avalanche capability for ruggedness, and integrated gate protection - making it optimal for space-constrained, high-reliability industrial switching where TO-252 footprint and transient resilience are prioritized over raw RDS(on) minimization.
Availability
2SK3402-ZK-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, programmable electronic loads, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 2SK3402-ZK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and automotive SoCs, with global design and manufacturing infrastructure.
The 2SK3402-ZK-E1-AY belongs to Renesas' legacy power MOSFET product line targeting high-current industrial switching applications, emphasizing ruggedness, thermal efficiency, and ease of integration in surface-mount power stages.
FAQ
What is the maximum continuous drain current rating for the 2SK3402-ZK-E1-AY?
The 2SK3402-ZK-E1-AY has a maximum continuous drain current ID(DC) of ±36 A at case temperature TC = 25°C. At ambient temperature TA = 25°C, its power dissipation is limited to 1.0 W, resulting in a practical continuous current of approximately 8–10 A without heatsinking. Derating curves in the datasheet must be applied for elevated temperatures.
Does the 2SK3402-ZK-E1-AY have built-in gate protection, and is external protection still required?
Yes, the 2SK3402-ZK-E1-AY includes an internal gate-source Zener diode for ESD protection rated up to ±20 V. However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." This means external TVS or RC snubbers remain necessary for system-level surge immunity, especially in industrial environments.
Can the 2SK3402-ZK-E1-AY be driven directly by a 3.3 V microcontroller GPIO?
No - the 2SK3402-ZK-E1-AY has a gate threshold voltage VGS(off) of 1.5–2.5 V and specifies RDS(on)2 = 22 mΩ max at VGS = 4.0 V, but full enhancement requires ≥10 V for rated 15 mΩ performance. A 3.3 V GPIO cannot reliably achieve low RDS(on); a gate driver or level shifter is required for efficient switching.
What is the significance of the "ZK" and "E1-AY" suffixes in 2SK3402-ZK-E1-AY?
The "ZK" suffix denotes the TO-252 (MP-3Z) package variant per Renesas' ordering information. "E1-AY" indicates tape-and-reel packaging (E1), RoHS-compliant plating (AY), and standard quality grade ("Standard" per Renesas' classification), suitable for industrial equipment, office systems, and communications gear - not automotive or safety-critical applications.
How does the 2SK3402-ZK-E1-AY perform in avalanche mode, and what are the test conditions?
The 2SK3402-ZK-E1-AY is rated for single-pulse avalanche with IAS = 35 A and EAS = 123 mJ. These values are measured under strict conditions: starting channel temperature Tch = 25°C, VDD = 30 V, gate resistor RG = 25 Ω, and gate drive transition from 20 V to 0 V. Operation outside these parameters voids the rating and risks device failure.
2SK3402-ZK-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta), 40W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3Z)
2SK3402-ZK-E1-AY FAQ
1.How can I place an order for 2SK3402-ZK-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3402-ZK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3402-ZK-E1-AY reliable?
The price and inventory of 2SK3402-ZK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3402-ZK-E1-AY is usually 5 days.
3.What payment methods are accepted for 2SK3402-ZK-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3402-ZK-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3402-ZK-E1-AY?
2SK3402-ZK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3402-ZK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3402-ZK-E1-AY?
For technical support, including 2SK3402-ZK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3402-ZK-E1-AY requirements.
6.How does Aetrix verify that 2SK3402-ZK-E1-AY is sourced from the original manufacturer or authorized distributors?
All 2SK3402-ZK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3402-ZK-E1-AY meets industry standards.
7.What is the process for return or replacement of 2SK3402-ZK-E1-AY?
All 2SK3402-ZK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3402-ZK-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3402-ZK-E1-AY part is unused and in its original packaging.
Return procedure for 2SK3402-ZK-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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