Renesas 2SK3404-Z-E1-AZ

Overview

2SK3404-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for low-voltage, high-current switching applications including synchronous rectification in DC/DC converters. It features a maximum R_DS(on) of 14 mΩ at V_GS = 10 V and I_D = 20 A, 4.5-V gate drive capability, and built-in gate protection diode. Its TO-220AB package supports industrial-grade thermal dissipation up to 40 W at T_C = 25°C.

For engineers reviewing the 2SK3404-Z-E1-AZ datasheet, 2SK3404-Z-E1-AZ pinout, 2SK3404-Z-E1-AZ application, or 2SK3404-Z-E1-AZ equivalent, key selection criteria include verified R_DS(on) performance at 4.5 V gate drive, pulsed drain current rating of ±160 A, reverse recovery time of 31 ns, and compatibility with surface-mount or through-hole mounting depending on variant.

Technical Context

This device operates as a unidirectional, enhancement-mode power switch with integrated source-drain body diode and ESD-protective gate diode. Its channel temperature rating of 150°C and gate-to-source voltage range of ±20 V enable robust operation in industrial power stages where transient overvoltage and thermal cycling are present.

The 2SK3404-Z-E1-AZ exhibits low dynamic losses due to total gate charge of 25 nC (typ.) and fast switching times - turn-on delay of 20 ns, rise time of 9 ns, turn-off delay of 50 ns, and fall time of 14 ns - under standardized test conditions (V_DD = 15 V, I_D = 20 A, R_G = 10 Ω).

Key Specifications

Pinout & Package

2SK3404-Z-E1-AZ uses the TO-220AB package (MP-25), with metal tab (Pin 4) electrically connected to the drain. The package provides mechanical stability and thermal path integrity for high-power switching in ambient temperatures up to 150°C channel temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPBF and STP30NF20, the 2SK3404-Z-E1-AZ delivers lower conduction loss at 20 A, verified 4.5-V drive capability, and documented fast body diode recovery - making it uniquely suited for high-efficiency, thermally constrained 24 V industrial power stages.

Availability

2SK3404-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, DC/DC synchronous rectifiers, hot-swap ORing circuits, and UPS DC bus switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SK3404-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial and automotive markets.

The 2SK3404-Z-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting industrial switching applications - engineered for reliability in 24 V DC power systems where low R_DS(on), fast switching, and gate robustness are prioritized.

FAQ

What is the maximum continuous drain current rating for the 2SK3404-Z-E1-AZ?

The 2SK3404-Z-E1-AZ has a DC drain current rating of ±40 A at T_C = 25°C. This rating assumes proper heatsinking and derating per the datasheet's thermal curves; actual usable current depends on PCB copper area, ambient temperature, and airflow. At elevated case temperatures, the current must be reduced linearly using the derating factor shown in Figure 5 of the D14638EJ2V0DS datasheet.

Does the 2SK3404-Z-E1-AZ have a built-in gate protection diode?

Yes, the 2SK3404-Z-E1-AZ integrates a gate-to-source protection diode to suppress electrostatic discharge (ESD) events. As noted in the Equivalent Circuit diagram and Features section of the datasheet, this diode safeguards the gate oxide but does not eliminate the need for external gate resistors and layout best practices - especially in high-noise industrial environments where fast transients may exceed the diode's clamping capability.

Can the 2SK3404-Z-E1-AZ be driven directly from a 5-V microcontroller GPIO?

Yes, the 2SK3404-Z-E1-AZ is explicitly rated for 4.5-V gate drive, with R_DS(on)2 = 21 mΩ max at V_GS = 4.5 V and I_D = 20 A. While a 5-V GPIO can turn the device fully on, a series gate resistor (typically 10–47 Ω) is required to control dV/dt, prevent ringing, and limit peak gate current - especially given its 25 nC total gate charge.

What is the reverse recovery time (t_rr) of the body diode in the 2SK3404-Z-E1-AZ?

The body diode reverse recovery time of the 2SK3404-Z-E1-AZ is 31 ns, measured at I_F = 40 A, di/dt = 100 A/µs, and V_GS = 0 V. This value is confirmed in the Electrical Characteristics table and supports efficient operation in synchronous rectifier topologies where fast commutation minimizes switching loss and voltage overshoot.

Is the 2SK3404-Z-E1-AZ RoHS compliant?

Yes, the 2SK3404-Z-E1-AZ complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation. The "-E1-AZ" suffix denotes lead-free plating and RoHS-compliant packaging per Renesas' standard industrial part numbering convention introduced post-2006.