Renesas 2SK3404-Z-E2-AZ

Overview

2SK3404-Z-E2-AZ from Renesas Electronics is an N-channel power MOSFET designed for low-voltage, high-current switching applications including synchronous rectification in DC/DC converters. It features 4.5-V gate drive capability, 14 mΩ max R_DS(on) at V_GS = 10 V and I_D = 20 A, ±40 A DC drain current rating, built-in gate protection diode, and TO-220AB package.

For engineers reviewing the 2SK3404-Z-E2-AZ datasheet, 2SK3404-Z-E2-AZ pinout, 2SK3404-Z-E2-AZ application, or 2SK3404-Z-E2-AZ equivalent, key selection criteria include gate threshold voltage (1.5–2.5 V), low gate charge (25 nC typ.), fast switching times (td(on) = 20 ns, tf = 14 ns), and thermal performance (R_th(ch-C) = 3.13 °C/W).

Technical Context

This device operates as a unidirectional power switch with source-connected body diode and integrated gate ESD protection. Its forward transfer admittance |y_fs| reaches 8.0 S at V_DS = 10 V and I_D = 20 A, supporting high transconductance control. The gate-to-source cutoff voltage (V_GS(off)) ranges from 1.5 V to 2.5 V at I_D = 1 mA, enabling reliable turn-off under industrial temperature conditions (−55°C to +150°C).

Switching behavior is characterized by low output capacitance (C_oss = 410 pF at V_DS = 10 V) and reverse transfer capacitance (C_rss = 180 pF), minimizing Miller effect during high-speed transitions. Diode recovery parameters-trr = 31 ns and Q_rr = 28 nC at di/dt = 100 A/µs-support efficient operation in hard-switched topologies.

Key Specifications

Pinout & Package

2SK3404-Z-E2-AZ uses the TO-220AB package (MP-25), a through-hole power package with isolated metal tab (Drain-connected fin) and three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab serves as the Drain terminal and provides mechanical mounting and thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPBF and STP40NF10L, the 2SK3404-Z-E2-AZ delivers superior conduction efficiency and faster switching in 24-V industrial power stages, making it optimal for space-constrained, thermally sensitive synchronous rectifier and motor drive implementations.

Availability

2SK3404-Z-E2-AZ is available at Aetrix Electronics and suitable for DC/DC converters, motor drives, hot-swap controllers, and 24-V industrial load switching requiring stable component supply and long-term manufacturability.

Supply support for 2SK3404-Z-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK3404-Z-E2-AZ belongs to Renesas' legacy power MOSFET product line targeting industrial-grade switching applications, emphasizing low R_DS(on), robust gate drive compatibility, and thermal reliability in TO-220 packages.

FAQ

What is the maximum continuous drain current rating for the 2SK3404-Z-E2-AZ?

The 2SK3404-Z-E2-AZ has a DC drain current rating of ±40 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the derating curve in the datasheet. At T_C = 100°C, the usable I_D(DC) drops to approximately 20 A. Proper heatsinking is essential to sustain rated current, especially in enclosed or high-ambient environments where the 2SK3404-Z-E2-AZ's R_th(ch-C) = 3.13 °C/W must be considered.

Does the 2SK3404-Z-E2-AZ have a built-in body diode, and what are its recovery characteristics?

Yes, the 2SK3404-Z-E2-AZ integrates a parasitic body diode between Source and Drain. Its reverse recovery time (t_rr) is 31 ns and reverse recovery charge (Q_rr) is 28 nC under test conditions of I_F = 40 A, di/dt = 100 A/µs, and V_GS = 0 V. These values indicate relatively fast recovery, making the 2SK3404-Z-E2-AZ suitable for synchronous rectification in medium-frequency DC/DC converters where body diode conduction occurs during dead-time intervals.

Can the 2SK3404-Z-E2-AZ be driven directly from a 5-V microcontroller GPIO?

Yes, the 2SK3404-Z-E2-AZ supports 4.5-V gate drive and has a gate threshold voltage range of 1.5–2.5 V, allowing direct connection to standard 5-V logic outputs. However, a series gate resistor (typically 10–47 Ω) is recommended to control dV/dt, suppress ringing, and limit peak gate current. The 2SK3404-Z-E2-AZ's 25-nC total gate charge means a 5-V MCU driving through 22 Ω achieves ~100 ns rise time, suitable for ≤500 kHz switching.

What is the absolute maximum gate-to-source voltage for the 2SK3404-Z-E2-AZ?

The absolute maximum gate-to-source voltage (V_GSS) for the 2SK3404-Z-E2-AZ is ±20 V. Exceeding this rating risks permanent gate oxide damage. Although the device includes a built-in gate protection diode, transient overvoltage events (e.g., ESD or inductive kickback) must still be clamped externally if system-level threats exceed ±20 V. For robust 2SK3404-Z-E2-AZ deployment, ensure gate drive circuits remain within −15 V to +15 V during normal operation and fault conditions.

Is the 2SK3404-Z-E2-AZ RoHS compliant and lead-free?

Yes, the 2SK3404-Z-E2-AZ is RoHS compliant and lead-free. The "-E2" suffix in the part number denotes lead-free plating per JEDEC J-STD-609, and the device meets EU RoHS Directive requirements for restricted substances. Renesas confirms environmental compliance in official documentation, and the 2SK3404-Z-E2-AZ is suitable for use in consumer, industrial, and commercial equipment where lead-free manufacturing is mandated.