Renesas 2SK3430-Z-E1-AZ

Overview

2SK3430-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridges, and industrial power supply output stages. It delivers R_DS(on)1 = 7.3 mΩ max at V_GS = 10 V / I_D = 40 A, supports ±200 A pulsed drain current, and features built-in gate protection diode in TO-220SMD (MP-25Z) package.

For engineers reviewing the 2SK3430-Z-E1-AZ datasheet, 2SK3430-Z-E1-AZ pinout, 2SK3430-Z-E1-AZ application, or 2SK3430-Z-E1-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 137 mJ), low C_iss (2800 pF typ.), body diode reverse recovery time (t_rr = 50 ns), and gate charge (Q_G = 50 nC) for hard-switched SMPS designs.

Technical Context

This discrete power MOSFET uses planar vertical DMOS structure with optimized cell pitch to achieve ultra-low on-resistance while maintaining robust avalanche capability. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The integrated gate-source protection diode suppresses ESD transients but does not replace external gate clamping in high-dV/dt environments. Body diode forward voltage (V_F(S-D) = 1.0 V at I_F = 80 A) and Q_rr = 77 nC support synchronous rectification in buck converters when paired with complementary control.

Key Specifications

Pinout & Package

2SK3430-Z-E1-AZ is housed in TO-220SMD (MP-25Z) surface-mount package with isolated drain tab (pin 4), compatible with reflow soldering and thermal pad mounting. Package dimensions: 15.5 mm × 10.0 mm × 4.8 mm (L×W×H), with 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PbF and STP80NF55-08, the 2SK3430-Z-E1-AZ offers optimal balance of low gate charge (50 nC), fast body diode recovery (50 ns), and industry-standard TO-220SMD footprint-making it preferred for space-constrained 24 V industrial SMPS where driver efficiency and layout simplicity are critical.

Availability

2SK3430-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, LED drivers, and high-current load switching requiring stable component supply and long-term production continuity.

Supply support for 2SK3430-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3430-Z-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting cost-sensitive, high-reliability industrial power conversion-designed for applications demanding robust avalanche performance and low on-resistance in standardized packages.

FAQ

What is the maximum continuous drain current rating for the 2SK3430-Z-E1-AZ at 25°C case temperature?

The 2SK3430-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) rating of ±80 A when the case temperature (T_C) is maintained at 25°C. This rating assumes adequate heatsinking and is derated linearly above 25°C per the datasheet's total power dissipation vs. case temperature curve. At T_C = 100°C, the usable I_D(DC) drops to approximately ±35 A due to thermal limits.

Does the 2SK3430-Z-E1-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3430-Z-E1-AZ integrates a source-drain body diode with forward voltage V_F(S-D) = 1.0 V at I_F = 80 A and reverse recovery time t_rr = 50 ns under specified test conditions (di/dt = 100 A/µs, V_GS = 0 V). Its reverse recovery charge Q_rr is 77 nC, enabling use in synchronous rectification and freewheeling paths where fast recovery minimizes switching loss and cross-conduction risk.

Can the 2SK3430-Z-E1-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No-the 2SK3430-Z-E1-AZ is not a logic-level MOSFET. Its gate threshold voltage (V_GS(off)) ranges from 1.5 V to 2.5 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on)1 = 7.3 mΩ. Driving with only 3.3 V results in high on-resistance (>100 mΩ), excessive conduction loss, and potential thermal runaway. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required for reliable operation of the 2SK3430-Z-E1-AZ.

What is the avalanche energy rating of the 2SK3430-Z-E1-AZ, and how is it tested?

The 2SK3430-Z-E1-AZ has a single-pulse avalanche energy rating (E_AS) of 137 mJ, measured under conditions of V_DD = 20 V, R_G = 25 Ω, and initial channel temperature T_ch = 25°C, with gate drive transitioning from 20 V to 0 V. This rating validates safe operation during inductive load switching events such as motor phase commutation or transformer reset, eliminating need for external snubbers in many industrial applications.

Is the TO-220SMD package of the 2SK3430-Z-E1-AZ compatible with standard TO-220AB footprints on PCBs?

No-the TO-220SMD (MP-25Z) package used by the 2SK3430-Z-E1-AZ has different mechanical dimensions and lead configuration than TO-220AB. While both share 2.54 mm lead pitch, TO-220SMD features shorter leads, integrated thermal pad, and non-isolated drain tab design. It requires a dedicated land pattern per Renesas' MP-25Z drawing-not drop-in compatible with TO-220AB layouts. Thermal performance also differs significantly due to PCB copper area dependence.