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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3431-AZ

Name: 2SK3431-AZ
Brand: Renesas
SKU: 2SK3431-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3431-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: 2SK3431-AZ.pdf

Description:: 2SK3431-AZ - SWITCHING N-CHANNEL

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Product details

Overview

2SK3431-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridges, and industrial power supply output stages. It delivers R_DS(on)1 = 5.6 mΩ (V_GS = 10 V, I_D = 42 A), 83 A continuous drain current (T_C = 25°C), and 423 mJ single-pulse avalanche energy - enabling robust operation in hard-switched 40 V rail systems.

For engineers reviewing the 2SK3431-AZ datasheet, 2SK3431-AZ pinout, 2SK3431-AZ application, or 2SK3431-AZ equivalent, key selection criteria include its TO-220AB package thermal resistance (R_th(ch-C) = 1.25°C/W), gate charge profile (Q_G = 110 nC), body diode reverse recovery time (t_rr = 65 ns), and built-in gate protection diode - all critical for synchronous rectification, PWM motor control, and overvoltage transient resilience.

Technical Context

The 2SK3431-AZ employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switching topologies. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, while its C_iss = 6100 pF (typ.) and Q_GD/Q_GS ratio of ~1.7 support stable gate drive design under high dV/dt conditions.

It integrates a monolithic gate-source ESD protection diode - confirmed in the equivalent circuit diagram - and exhibits specified avalanche capability (I_AS = 65 A, E_AS = 423 mJ) under defined test conditions (V_DD = 20 V, R_G = 25 Ω, T_ch = 25°C). The device operates within Standard quality grade per Renesas classification, targeting non-life-critical industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 40 V automotive/industrial rails.
R_DS(on)1	5.6 mΩ max at V_GS = 10 V, I_D = 42 A - Enables <1.8 W conduction loss at 42 A, reducing heatsink requirements in high-efficiency SMPS.
I_D(DC)	±83 A at T_C = 25°C - Supports high peak-load motor drives and UPS inverters without derating at case temperature ≤25°C.
Q_G	110 nC - Determines gate driver power requirement; requires ≥1 A peak drive capability for <100 ns switching transitions.
t_rr	65 ns - Limits body diode commutation loss in synchronous buck or half-bridge configurations with fast load transients.
E_AS	423 mJ - Specifies single-pulse inductive energy handling capacity, supporting unclamped inductive switching in relay drivers or solenoid controls.
T_ch max	150°C - Sets maximum junction temperature limit; combined with R_th(ch-C) = 1.25°C/W, defines safe operating area under pulsed loads.

Pinout & Package

2SK3431-AZ is housed in a TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin), rated for 100 W total power dissipation at T_C = 25°C. The package features three leads: Gate (pin 1), Drain (pin 2), Source (pin 3), and an exposed metal fin (pin 4) electrically tied to Drain - requiring insulated mounting hardware when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; requires 10 V for full enhancement; protected by internal Zener diode to ±20 V.
2 (Drain)	Main current sink	Connected to high-side switch node or inductive load return; ties directly to metal fin for thermal conduction.
3 (Source)	Main current source / reference	Serves as power ground reference for gate drive; must be low-inductance path to minimize switching noise.
4 (Fin)	Drain thermal & electrical extension	Exposed metal surface bonded to Drain; provides primary heat path to heatsink - must be electrically isolated if heatsink is grounded.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.6 mΩ max enables <2 W conduction loss at 42 A, reducing thermal stress in compact power modules.
Built-in gate protection diode	Monolithic Zener between Gate and Source clamps ESD transients up to ±20 V - reduces need for external TVS in space-constrained designs.
High avalanche energy rating	423 mJ single-pulse capability allows safe operation during inductive load turn-off without external snubbers in relay/solenoid drivers.
Low gate charge asymmetry	Q_GD/Q_GS ≈ 1.7 ensures predictable Miller plateau timing and mitigates shoot-through risk in bridge configurations.
Optimized body diode	65 ns t_rr and 1.0 V V_F(S-D) at 83 A support efficient synchronous rectification in 40 V-class DC-DC converters.

Applications

Motor Drive Half-Bridge	Industrial DC-DC Converter
Use Scenario: Driving brushed DC motors or stepper phase windings in factory automation controllers with 24–40 V supplies. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge topology; handles bidirectional 83 A peak currents with minimal conduction loss. Use Value: Low R_DS(on) and fast t_rr reduce heat generation and improve torque response during rapid direction reversal.	Use Scenario: Primary-side switch in isolated 40 V input, 12 V output flyback or forward converters for PLC power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer; operates at 50–200 kHz with hard switching. Use Value: 423 mJ E_AS withstands leakage inductance spikes without failure; 110 nC Q_G enables efficient gate drive with standard 1 A drivers.
UPS Inverter Stage	High-Current Relay/Solenoid Driver
Use Scenario: Output stage of 1 kVA uninterruptible power supply converting 48 V DC battery to 120/230 V AC via full-bridge inverter. IC Role / Device Role / Timing Role: Switching transistor in full-bridge leg; conducts 83 A DC continuously and handles 332 A pulse currents during overload. Use Value: TO-220AB package with R_th(ch-C) = 1.25°C/W sustains high duty-cycle operation without thermal runaway.	Use Scenario: Solid-state replacement for mechanical relays controlling HVAC dampers or industrial valves using 24–40 V DC coils. IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs coil energy via avalanche mode during turn-off. Use Value: Rated 65 A I_AS and 423 mJ E_AS eliminate need for external flyback diodes or RC snubbers - simplifying BOM and layout.

Motor Drive Half-Bridge

Industrial DC-DC Converter

Use Scenario: Driving brushed DC motors or stepper phase windings in factory automation controllers with 24–40 V supplies.

IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge topology; handles bidirectional 83 A peak currents with minimal conduction loss.

Use Value: Low R_DS(on) and fast t_rr reduce heat generation and improve torque response during rapid direction reversal.

Use Scenario: Primary-side switch in isolated 40 V input, 12 V output flyback or forward converters for PLC power supplies.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer; operates at 50–200 kHz with hard switching.

Use Value: 423 mJ E_AS withstands leakage inductance spikes without failure; 110 nC Q_G enables efficient gate drive with standard 1 A drivers.

UPS Inverter Stage

High-Current Relay/Solenoid Driver

Use Scenario: Output stage of 1 kVA uninterruptible power supply converting 48 V DC battery to 120/230 V AC via full-bridge inverter.

IC Role / Device Role / Timing Role: Switching transistor in full-bridge leg; conducts 83 A DC continuously and handles 332 A pulse currents during overload.

Use Value: TO-220AB package with R_th(ch-C) = 1.25°C/W sustains high duty-cycle operation without thermal runaway.

Use Scenario: Solid-state replacement for mechanical relays controlling HVAC dampers or industrial valves using 24–40 V DC coils.

IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs coil energy via avalanche mode during turn-off.

Use Value: Rated 65 A I_AS and 423 mJ E_AS eliminate need for external flyback diodes or RC snubbers - simplifying BOM and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP40N40P	V_DSS = 400 V, R_DS(on) = 95 mΩ - higher voltage rating but 17× higher on-resistance.	Designed for 400 V SMPS; unsuitable for 40 V high-current apps due to excessive conduction loss.	Select only if system requires >100 V blocking; otherwise avoid for 40 V, high-current use cases.
IRF1404ZLPbF	V_DSS = 40 V, R_DS(on) = 4.7 mΩ - slightly lower on-resistance but no specified avalanche rating or gate protection diode.	Lacks documented E_AS and integrated gate clamp; requires external protection in noisy environments.	Preferable where lowest R_DS(on) is critical and avalanche robustness is managed externally.

Compared with IXTP40N40P and IRF1404ZLPbF, the 2SK3431-AZ uniquely balances 40 V rating, ultra-low 5.6 mΩ on-resistance, verified 423 mJ avalanche energy, and built-in gate protection - making it optimal for cost-sensitive, thermally constrained 40 V industrial switching where reliability under transient stress is mandatory.

Availability

2SK3431-AZ is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, DC-DC converters, and high-current solenoid control requiring stable component supply across multi-year production cycles.

Supply support for 2SK3431-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.

The 2SK3431-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-current, hard-switched industrial power conversion - emphasizing ruggedness, thermal efficiency, and integrated protection in TO-220AB packaging.

FAQ

What is the maximum continuous drain current rating for the 2SK3431-AZ?

The 2SK3431-AZ has a maximum continuous drain current (I_D(DC)) of ±83 A when case temperature (T_C) is maintained at 25°C. This rating drops with increasing case temperature per the derating curve in the datasheet - at T_C = 100°C, usable current falls to approximately 35 A. Designers must ensure heatsinking maintains T_C ≤ 100°C for sustained 83 A operation. The 2SK3431-AZ achieves this via its TO-220AB package with R_th(ch-C) = 1.25°C/W.

Does the 2SK3431-AZ include integrated gate protection?

Yes, the 2SK3431-AZ incorporates a monolithic gate-source Zener diode for ESD protection, rated to ±20 V per the absolute maximum ratings. This internal diode clamps transient voltages before they damage the gate oxide, reducing reliance on external TVS components. However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied" - meaning the 2SK3431-AZ's built-in diode is supplemental, not sufficient alone for harsh industrial environments.

What is the avalanche energy rating of the 2SK3431-AZ and how is it tested?

The 2SK3431-AZ is rated for 423 mJ single-pulse avalanche energy (E_AS) under defined test conditions: starting channel temperature of 25°C, V_DD = 20 V, gate resistor R_G = 25 Ω, and gate drive transition from 20 V to 0 V. This rating confirms controlled energy absorption during unclamped inductive turn-off - critical for relay, solenoid, and motor winding drivers. The 2SK3431-AZ also specifies 65 A single avalanche current (I_AS) under identical conditions.

Can the 2SK3431-AZ be used in synchronous rectification applications?

Yes, the 2SK3431-AZ supports synchronous rectification due to its low R_DS(on) (5.6 mΩ), fast body diode (t_rr = 65 ns, V_F(S-D) = 1.0 V at 83 A), and gate drive compatibility with standard 5–10 V logic. Its low Q_GD/Q_GS ratio improves controllability during commutation. However, because its body diode is not optimized for ultra-fast recovery like dedicated sync-FETs, designers should verify cross-conduction margins and dead-time settings in high-frequency (>200 kHz) converters. The 2SK3431-AZ remains well-suited for 50–150 kHz synchronous buck stages in 40 V systems.

What package type does the 2SK3431-AZ use and what are its thermal characteristics?

The 2SK3431-AZ uses the TO-220AB (MP-25) package, featuring an isolated metal fin (Drain-connected) for direct heatsink mounting. Its thermal resistance from channel to case (R_th(ch-C)) is 1.25°C/W, enabling 100 W power dissipation at T_C = 25°C. At ambient temperature (T_A = 25°C), total power dissipation is limited to 1.5 W due to high R_th(ch-A) = 83.3°C/W - confirming mandatory heatsinking for any power application. Mounting requires electrically isolating hardware if the heatsink is grounded.

2SK3431-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 100W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

2SK3431-AZ FAQ

1.How can I place an order for 2SK3431-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3431-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3431-AZ reliable?

The price and inventory of 2SK3431-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3431-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3431-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3431-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3431-AZ?

2SK3431-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3431-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3431-AZ?

For technical support, including 2SK3431-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3431-AZ requirements.

6.How does Aetrix verify that 2SK3431-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3431-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3431-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3431-AZ?

All 2SK3431-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3431-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3431-AZ part is unused and in its original packaging.

Return procedure for 2SK3431-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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