Renesas 2SK3432-AZ

Overview

2SK3432-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive H-bridge legs, and industrial power supply synchronous rectification control. It delivers R_DS(on)1 = 4.0 mΩ max at V_GS = 10 V / I_D = 42 A, supports ±83 A DC drain current, and features built-in gate protection diode in TO-220SMD package.

For engineers reviewing the 2SK3432-AZ datasheet, 2SK3432-AZ pinout, 2SK3432-AZ application, or 2SK3432-AZ equivalent, this page provides verified electrical parameters, thermal derating curves, avalanche energy ratings (E_AS = 476 mJ), gate charge profile (Q_G = 150 nC), and real-world switching timing data (t_d(off) = 470 ns) - all critical for hard-switched SMPS and motor control layout validation.

Technical Context

The 2SK3432-AZ uses a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its dual R_DS(on) specification (4.0 mΩ @ 10 V, 6.9 mΩ @ 4 V) confirms robust gate drive margin for logic-level and standard 10 V gate drivers alike.

It integrates a monolithic gate-source ESD protection diode and exhibits body diode reverse recovery characteristics (t_rr = 69 ns, Q_rr = 130 nC) suitable for freewheeling in buck converters and half-bridge configurations where synchronous rectification is not used.

Key Specifications

Pinout & Package

2SK3432-AZ is housed in TO-220SMD (MP-25Z) package - surface-mount variant of TO-220AB with isolated drain tab, enabling automated assembly while retaining thermal performance via PCB copper pour under the drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PbF and STP80NF55-08, the 2SK3432-AZ offers superior on-resistance, integrated ESD protection, and higher avalanche energy - making it optimal for space-constrained, high-reliability industrial power stages where gate robustness and transient immunity are prioritized.

Availability

2SK3432-AZ is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for 2SK3432-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK3432-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial-grade power conversion systems - emphasizing ruggedness, repeatable avalanche performance, and manufacturability in automated SMT lines.

FAQ

What is the maximum continuous drain current rating for the 2SK3432-AZ?

The 2SK3432-AZ has a maximum continuous drain current I_D(DC) of ±83 A at T_C = 25°C. This rating assumes adequate PCB copper area for thermal dissipation; actual usable current drops to ~45 A at T_C = 100°C per the derating curve. The 2SK3432-AZ must be mounted on ≥10 cm² of 2 oz copper with thermal vias to sustain rated current in production systems.

Does the 2SK3432-AZ include integrated gate protection?

Yes, the 2SK3432-AZ integrates a monolithic gate-source protection diode to suppress electrostatic discharge (ESD) events during handling and assembly. However, Renesas explicitly states that an external protection circuit remains necessary if voltages exceeding ±20 V gate-source rating may occur in system operation - such as from Miller coupling or gate driver faults. The 2SK3432-AZ's internal diode does not replace robust external clamping.

What is the avalanche energy rating of the 2SK3432-AZ and how is it tested?

The 2SK3432-AZ is rated for single-pulse avalanche energy E_AS = 476 mJ under test conditions of V_DD = 20 V, R_G = 25 Ω, and starting channel temperature of 25°C. This value is measured using the standardized unclamped inductive switching (UIS) test circuit defined in JEDEC standards. The 2SK3432-AZ's 476 mJ rating enables reliable operation during short-circuit or overload events in motor drive and UPS inverters without immediate failure.

Can the 2SK3432-AZ be used in synchronous rectification applications?

The 2SK3432-AZ is not optimized for synchronous rectification due to its relatively high body diode forward voltage (V_F(S-D) = 1.0 V at 83 A) and reverse recovery charge (Q_rr = 130 nC). While functional in low-frequency (<50 kHz) flyback or forward converters, its Q_rr causes significant switching loss in high-frequency LLC or phase-shifted full-bridge topologies. For synchronous rectification, dedicated low-Q_rr, logic-level MOSFETs like the SiR626DP are preferred over the 2SK3432-AZ.

What package type is used for the 2SK3432-AZ and what are its mounting requirements?

The 2SK3432-AZ uses the TO-220SMD (MP-25Z) package - a surface-mount variant of TO-220AB with gull-wing leads and exposed drain tab. It requires reflow soldering per J-STD-020 profile, with the drain tab soldered directly to ≥10 cm² of 2 oz copper on the PCB for thermal conduction. Unlike through-hole TO-220AB, the 2SK3432-AZ does not use a mechanical heatsink; thermal performance relies entirely on PCB copper area and via count beneath the drain pad.