Renesas 2SK3432-Z-AZ

Overview

2SK3432-Z-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs, featuring R_DS(on)1 = 4.0 mΩ max at V_GS = 10 V / I_D = 42 A, 40 V V_DSS, and 83 A continuous drain current (T_C = 25°C). It integrates a gate protection diode and delivers 476 mJ single-pulse avalanche energy.

For engineers reviewing the 2SK3432-Z-AZ datasheet, 2SK3432-Z-AZ pinout, 2SK3432-Z-AZ application, or 2SK3432-Z-AZ equivalent, key selection criteria include low on-resistance at 4 V gate drive, fast switching with 140 ns turn-on delay, robust avalanche capability, and TO-220SMD package suitability for automated SMT assembly in high-power industrial inverters.

Technical Context

This device employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage range (1.5–2.5 V) ensures reliable enhancement-mode operation, while the 9500 pF input capacitance and 45 nC Q_GD support stable gate driving under high di/dt conditions.

The built-in gate-source ESD protection diode reduces external clamping requirements, though external transient suppression remains mandatory per datasheet note. Thermal resistance R_th(ch-C) = 1.25°C/W enables high-power dissipation when mounted on heatsinks, and the body diode exhibits 1.0 V forward voltage at 83 A with 69 ns reverse recovery time.

Key Specifications

Pinout & Package

2SK3432-Z-AZ uses the TO-220SMD (MP-25Z) surface-mount package with isolated tab (Drain-connected fin), enabling automated reflow assembly and improved thermal coupling to PCB copper planes versus through-hole TO-220AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP40N10P and IRF1404ZLPBF, the 2SK3432-Z-AZ offers superior low-voltage conduction efficiency and SMT compatibility, making it optimal for space-constrained, high-current industrial power stages where gate drive simplicity and avalanche ruggedness are prioritized over extended voltage headroom.

Availability

2SK3432-Z-AZ is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, uninterruptible power supplies, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for 2SK3432-Z-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK3432-Z-AZ belongs to Renesas' legacy power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3432-Z-AZ at 100°C case temperature?

The 2SK3432-Z-AZ has a derated continuous drain current of approximately 55 A at T_C = 100°C, calculated using its R_DS(on) temperature coefficient and thermal resistance (R_th(ch-C) = 1.25°C/W). This value ensures safe operation within the Forward Bias Safe Operating Area (FBSOA) curve shown in Figure 4 of the D14601EJ4V0DS datasheet. Always verify actual board-level thermal performance before final design sign-off for the 2SK3432-Z-AZ.

Does the 2SK3432-Z-AZ require an external gate resistor for ESD protection?

No - the 2SK3432-Z-AZ incorporates an internal gate-source Zener diode rated for ±20 V, providing basic ESD protection per human-body model. However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied," meaning fast transients (e.g., IEC 61000-4-4) still demand external RC snubbing or TVS diodes. This applies directly to the 2SK3432-Z-AZ in real-world industrial environments.

Can the 2SK3432-Z-AZ be used in synchronous rectification configurations?

Yes - the 2SK3432-Z-AZ's body diode has t_rr = 69 ns and Q_rr = 130 nC, enabling use as a synchronous rectifier in secondary-side DC-DC stages up to ~200 kHz. Its low R_DS(on) further reduces conduction loss versus Schottky diodes above 5 A. However, gate drive timing must precisely align with voltage polarity reversal to avoid shoot-through, a constraint inherent to the 2SK3432-Z-AZ's fixed threshold and capacitance profile.

What is the gate charge profile of the 2SK3432-Z-AZ and how does it affect driver selection?

The 2SK3432-Z-AZ specifies Q_G = 150 nC, Q_GS = 29 nC, and Q_GD = 45 nC. This indicates a pronounced Miller plateau region requiring ≥2 A peak gate current for 50 ns turn-on (assuming 10 V drive). Drivers like the UCC27531 or TC4429 are recommended to ensure clean switching and minimize overlap loss. This gate charge behavior is intrinsic to the 2SK3432-Z-AZ's silicon process and must be accounted for in all driver-stage designs.

Is the TO-220SMD package of the 2SK3432-Z-AZ compatible with standard reflow profiles?

Yes - the 2SK3432-Z-AZ's TO-220SMD (MP-25Z) package is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260°C. Its exposed drain tab requires adequate stencil aperture and solder paste volume to ensure void-free thermal attachment. Renesas confirms this package is "produced only in Japan" and validated for automated SMT lines, distinguishing the 2SK3432-Z-AZ from through-hole variants like 2SK3432.