Renesas 2SK3433(0)-Z-E1-AZ

Overview

2SK3433(0)-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial SMPS applications. It delivers R_DS(on)1 = 26 mΩ max at V_GS = 10 V / I_D = 20 A, supports ±80 A pulsed drain current, and features built-in gate protection diode with 60 V V_DSS rating.

For engineers reviewing the 2SK3433(0)-Z-E1-AZ datasheet, 2SK3433(0)-Z-E1-AZ pinout, 2SK3433(0)-Z-E1-AZ application, or 2SK3433(0)-Z-E1-AZ equivalent, this page provides verified package mapping (TO-220SMD), avalanche energy rating (E_AS = 44 mJ), body diode reverse recovery time (t_rr = 44 ns), and real-world switching timing (t_d(off) = 89 ns).

Technical Context

This device uses a vertical double-diffused MOS (VDMOS) structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage range (1.5–2.5 V) ensures reliable turn-on with standard 5 V logic-level drivers while maintaining noise immunity.

The integrated gate protection diode safeguards against ESD but does not replace external clamping for transient overvoltage events. The device's C_iss = 1500 pF (typ) and Q_G = 30 nC enable efficient gate driving at 100 kHz–500 kHz frequencies in isolated flyback and forward converters.

Key Specifications

Pinout & Package

2SK3433(0)-Z-E1-AZ is housed in TO-220SMD (MP-25Z) package - surface-mount variant of TO-220AB with isolated heat-transfer fin (Drain-connected tab) and gull-wing leads. Package dimensions: 10.0 mm × 8.5 mm × 4.8 mm, lead pitch 2.54 mm, thermal resistance R_th(ch–A) = 83.3 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IRFZ44NPBF, the 2SK3433(0)-Z-E1-AZ offers superior avalanche ruggedness (44 mJ vs. 25 mJ and 12 mJ), integrated gate protection, and surface-mount compatibility - critical for modern industrial power modules requiring high reliability and automated assembly.

Availability

2SK3433(0)-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-efficiency DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for 2SK3433(0)-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK3433(0)-Z-E1-AZ belongs to Renesas' legacy power MOSFET product line, engineered for ruggedized industrial switching applications where avalanche tolerance, low R_DS(on), and surface-mount reliability are prioritized.

FAQ

What is the maximum continuous drain current rating for the 2SK3433(0)-Z-E1-AZ at 25°C case temperature?

The 2SK3433(0)-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) of ±40 A when measured at T_C = 25°C. This rating assumes proper heatsinking and derating per the datasheet's total power dissipation curve - actual usable current drops to ~22 A at T_C = 100°C due to thermal limits. The 2SK3433(0)-Z-E1-AZ maintains safe operation within these boundaries when mounted on ≥25 cm² copper area with 1 oz. thickness.

Does the 2SK3433(0)-Z-E1-AZ include a body diode, and what are its key conduction parameters?

Yes, the 2SK3433(0)-Z-E1-AZ integrates a parasitic body diode between Source and Drain. Its forward voltage (V_F(S-D)) is 1.0 V typical at I_F = 40 A and V_GS = 0 V, with reverse recovery time (t_rr) of 44 ns and reverse recovery charge (Q_rr) of 60 nC under specified test conditions. These values make the 2SK3433(0)-Z-E1-AZ suitable for freewheeling paths in half-bridge topologies where fast recovery minimizes switching loss.

Can the 2SK3433(0)-Z-E1-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No - the 2SK3433(0)-Z-E1-AZ requires ≥4.0 V gate drive for guaranteed R_DS(on)2 ≤ 41 mΩ, but a 3.3 V GPIO cannot reliably overcome the gate threshold (V_GS(off) = 1.5–2.5 V) while providing sufficient overdrive. Driving the 2SK3433(0)-Z-E1-AZ directly risks incomplete turn-on and excessive conduction loss. A dedicated gate driver IC (e.g., TC4427) or level-shifting circuit is required for robust operation with 3.3 V controllers.

What is the thermal resistance from channel to ambient (R_th(ch–A)) for the 2SK3433(0)-Z-E1-AZ in TO-220SMD package?

The 2SK3433(0)-Z-E1-AZ in TO-220SMD (MP-25Z) package has a channel-to-ambient thermal resistance (R_th(ch–A)) of 83.3 °C/W, as specified in the datasheet. This value assumes standard JEDEC test conditions (single-layer 1 oz. copper, 1 in² pad). Real-world PCB layouts with enhanced thermal vias and 2 oz. copper can reduce effective R_th(ch–A) to ~45 °C/W, enabling higher sustained power dissipation for the 2SK3433(0)-Z-E1-AZ.

Is the 2SK3433(0)-Z-E1-AZ qualified for automotive applications?

No - the 2SK3433(0)-Z-E1-AZ is classified as a "Standard" quality grade device per Renesas' documentation, intended for industrial, office, and consumer equipment. It is not AEC-Q101 qualified and lacks automotive-specific stress testing, extended temperature validation, or PPAP documentation. For automotive use, Renesas recommends alternatives such as the R6020ENX series, not the 2SK3433(0)-Z-E1-AZ.