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Renesas 2SK3433-ZJ-E1-AZ
- Part No.:
- 2SK3433-ZJ-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3433-ZJ-E1-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:800
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Product details
Overview
2SK3433-ZJ-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive half-bridge applications, featuring RDS(on)1 = 26 mΩ max at VGS = 10 V / ID = 20 A, VDSS = 60 V, and built-in gate protection diode. It supports ±40 A DC drain current and operates with 1500 pF typical input capacitance.
For engineers reviewing the 2SK3433-ZJ-E1-AZ datasheet, 2SK3433-ZJ-E1-AZ pinout, 2SK3433-ZJ-E1-AZ application, or 2SK3433-ZJ-E1-AZ equivalent, this device is selected for high-efficiency 48 V input industrial power supplies, brushed DC motor H-bridge drivers, and avalanche-rugged load switch designs requiring low conduction loss and fast turn-on/turn-off timing.
Technical Context
This MOSFET uses a planar vertical DMOS structure optimized for switching performance in hard-switched topologies. Its gate threshold voltage (VGS(off)) ranges from 1.5 V to 2.5 V, enabling reliable enhancement-mode operation with standard 5 V or 10 V gate drivers. The device integrates a monolithic gate-source ESD protection diode but requires external gate series resistance and clamping for robust system-level surge immunity.
Thermal design relies on its TO-263 (MP-25ZJ) package with exposed drain tab, delivering Rth(ch–C) = 2.66 °C/W and supporting up to 47 W total power dissipation at TC = 25 °C. Avalanche capability is characterized at IAS = 21 A and EAS = 44 mJ under defined test conditions (VDD = 30 V, RG = 25 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 48 V bus systems with 20 % margin. |
| RDS(on)1 | 26 mΩ max @ VGS = 10 V, ID = 20 A - Enables ≤0.52 W conduction loss at 20 A DC. |
| ID(DC) | ±40 A @ TC = 25 °C - Supports high-current motor phase legs and SMPS primary switches. |
| Ciss | 1500 pF typ @ VDS = 10 V - Determines gate drive power requirement and switching speed trade-offs. |
| td(on)/tr | 35 ns / 320 ns @ VDD = 30 V, ID = 20 A - Defines minimum practical PWM frequency and dead-time requirements. |
| QG | 30 nC @ VDD = 48 V - Specifies gate driver peak current demand (e.g., ≥3 A for 10 ns rise time). |
| EAS | 44 mJ - Quantifies single-pulse inductive energy handling without failure under specified test setup. |
Pinout & Package
2SK3433-ZJ-E1-AZ is housed in a surface-mount TO-263 (MP-25ZJ) package with isolated gate, drain-connected tab, and source-terminal layout optimized for PCB thermal relief and high-current routing. The drain tab is electrically connected to Pin 2 and serves as the primary heat path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires external series resistor (typically 5–22 Ω) to damp ringing and limit peak current. |
| 2 (Drain) | Main current output | Connected to internal die drain and exposed metal tab; must be soldered to large copper pour for thermal management. |
| 3 (Source) | Main current return | Reference node for gate drive; forms low-inductance loop with gate driver ground to minimize shoot-through risk. |
| 4 (Drain Tab) | Thermal & electrical connection | Electrically identical to Pin 2; provides mechanical mounting and thermal interface to heatsink or PCB plane. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 26 mΩ max enables <0.5 W conduction loss at 20 A, reducing thermal stress in compact power stages. |
| Built-in gate protection diode | Monolithic ESD clamp between gate and source limits transient overvoltage to ±20 V, simplifying board-level protection. |
| High avalanche energy rating | 44 mJ single-pulse capability allows safe operation during inductive turn-off transients in motor and relay drivers. |
| Low Ciss and QG | 1500 pF Ciss and 30 nC QG support efficient 100–500 kHz switching with moderate gate driver strength. |
| TO-263 surface-mount package | Enables automated assembly and superior thermal performance vs. through-hole TO-220AB while maintaining layout compatibility. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Half-Bridge |
|---|---|
|
Use Scenario: High-efficiency 48 V input, 12 V output synchronous buck converter in industrial PLC power modules. IC Role / Device Role / Timing Role: Main high-side switching element operating at 250 kHz with 30 ns turn-on delay and 320 ns rise time. Use Value: 26 mΩ RDS(on) reduces conduction loss by >35 % versus legacy 40 mΩ MOSFETs, improving full-load efficiency from 92.1 % to 93.7 %. |
Use Scenario: Bidirectional drive for 24 V, 15 A brushed DC actuator in automated valve control systems. IC Role / Device Role / Timing Role: Low-side switch in complementary half-bridge configuration, leveraging 40 A DC rating and 44 mJ avalanche energy. Use Value: Integrated gate protection diode and robust SOA allow direct replacement of discrete gate clamp circuits, reducing BOM count by two components. |
| Industrial Load Switch | UPS Inverter Output Stage |
|
Use Scenario: Solid-state replacement for electromechanical contactors in 60 V battery-powered material handling equipment. IC Role / Device Role / Timing Role: Single-pole, high-current load disconnect switch with controlled turn-on/turn-off to suppress arcing. Use Value: 21 A single avalanche current rating ensures reliable interruption of inductive loads up to 100 mH without external snubbers. |
Use Scenario: Low-voltage leg in three-phase inverter stage for 48 V telecom UPS systems with active PFC front-end. IC Role / Device Role / Timing Role: Fast-switching N-channel device synchronized with complementary high-side driver, using 35 ns turn-on delay for precise dead-time control. Use Value: 1500 pF Ciss minimizes gate drive power consumption, enabling use of cost-effective 1 A peak gate drivers instead of 3 A alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPBF | RDS(on) = 28 mΩ @ 10 V (slightly higher), TO-220AB package, no integrated gate protection diode. | Requires external gate Zener clamp; less suitable for space-constrained SMT layouts due to through-hole mounting. | Prefer when legacy TO-220 footprint compatibility is required and gate protection is implemented externally. |
| STP60NF06 | RDS(on) = 0.018 Ω @ 10 V (lower), TO-220 package, higher QG (65 nC), no gate protection diode. | Higher gate charge increases driver complexity; lacks monolithic ESD protection, demanding stricter layout controls. | Select when lower conduction loss is critical and gate drive capability supports 65 nC charge; verify avalanche derating separately. |
Compared with IRFZ44NPBF and STP60NF06, the 2SK3433-ZJ-E1-AZ offers a balanced combination of low RDS(on), integrated gate protection, surface-mount TO-263 packaging, and verified 44 mJ avalanche energy-making it optimal for new industrial power designs where reliability, layout simplicity, and thermal performance are prioritized over marginal RDS(on) reduction.
Availability
2SK3433-ZJ-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and solid-state load switching applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for 2SK3433-ZJ-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SK3433-ZJ-E1-AZ belongs to Renesas' legacy power MOSFET product line, engineered for rugged, high-current switching in industrial power conversion and motor control systems where reliability and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for the 2SK3433-ZJ-E1-AZ?
The 2SK3433-ZJ-E1-AZ has a maximum continuous drain current (ID(DC)) of ±40 A at case temperature TC = 25 °C. This rating assumes proper PCB copper area and thermal vias under the drain tab. At higher case temperatures, derating applies per the datasheet's total power dissipation curve - e.g., ~25 A at TC = 100 °C. Always verify thermal design using Rth(ch–C) = 2.66 °C/W and actual board-level thermal resistance.
Does the 2SK3433-ZJ-E1-AZ include built-in gate protection?
Yes, the 2SK3433-ZJ-E1-AZ integrates a monolithic gate-to-source protection diode rated for ±20 V, as confirmed in the "Features" section and Equivalent Circuit diagram of its official datasheet (D14602EJ4V0DS). This diode guards against electrostatic discharge but does not replace external gate series resistance or TVS clamping for high-energy transients - those remain necessary for robust system-level design.
What is the avalanche energy rating of the 2SK3433-ZJ-E1-AZ and how is it tested?
The 2SK3433-ZJ-E1-AZ is rated for 44 mJ single-pulse avalanche energy (EAS) under the test condition: starting channel temperature Tch = 25 °C, VDD = 30 V, gate drive transition from 20 V to 0 V via RG = 25 Ω. This value is measured per JEDEC JESD24-1 and reflects ruggedness during inductive turn-off events - critical for motor drive and relay switching applications where voltage spikes exceed VDSS.
Can the 2SK3433-ZJ-E1-AZ be used in place of the through-hole 2SK3433 variant?
No direct pin-to-pin replacement exists between the 2SK3433-ZJ-E1-AZ (TO-263) and the original 2SK3433 (TO-220AB), as their footprints, thermal paths, and terminal geometries differ. While both share identical electrical specifications, the 2SK3433-ZJ-E1-AZ requires re-layout for surface-mount assembly and leverages its exposed drain tab for enhanced thermal performance - making it suitable for new designs but not a drop-in upgrade for existing TO-220-based PCBs.
What is the gate threshold voltage range for the 2SK3433-ZJ-E1-AZ?
The gate threshold voltage (VGS(off)) of the 2SK3433-ZJ-E1-AZ is specified from 1.5 V to 2.5 V at VDS = 10 V and ID = 1 mA. This range confirms consistent enhancement-mode behavior across production lots and supports reliable turn-on with standard logic-level (5 V) or TTL-compatible gate drivers, provided sufficient gate drive voltage margin is maintained above 2.5 V for full enhancement.
2SK3433-ZJ-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3433-ZJ-E1-AZ FAQ
1.How can I place an order for 2SK3433-ZJ-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3433-ZJ-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3433-ZJ-E1-AZ reliable?
The price and inventory of 2SK3433-ZJ-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3433-ZJ-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3433-ZJ-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3433-ZJ-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3433-ZJ-E1-AZ?
2SK3433-ZJ-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3433-ZJ-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3433-ZJ-E1-AZ?
For technical support, including 2SK3433-ZJ-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3433-ZJ-E1-AZ requirements.
6.How does Aetrix verify that 2SK3433-ZJ-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3433-ZJ-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3433-ZJ-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3433-ZJ-E1-AZ?
All 2SK3433-ZJ-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3433-ZJ-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3433-ZJ-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3433-ZJ-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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