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Renesas 2SK3447TZ-E
- Part No.:
- 2SK3447TZ-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-226-3, TO-92-3 Long Body
- Datasheet:
-
2SK3447TZ-E.pdf
- Description:
- 2SK3447TZ-E - SILICON N CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
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Product details
Overview
2SK3447TZ-E from Renesas Electronics is a silicon N-channel power MOSFET designed for low-voltage, low-current switching applications such as relay drivers, LED drivers, and small-signal load switches. It features 1.5 Ω typical RDS(on) at VGS = 10 V, 150 V VDSS, 1 A continuous drain current, ±20 V gate-source voltage rating, and TO-92MOD (PRSS0003DC-A) package. It operates reliably in consumer and industrial control circuits requiring 4 V gate drive capability.
For engineers reviewing the 2SK3447TZ-E datasheet, 2SK3447TZ-E pinout, 2SK3447TZ-E application, or 2SK3447TZ-E equivalent, key selection criteria include verified RDS(on) at 4 V gate drive, body-diode reverse recovery time (trr = 60 ns), safe operating area (SOA) limits up to 100 V/1 A, and thermal resistance (θch–a = 139°C/W) for ambient-limited PCB layouts.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for enhanced transconductance (|yfs| = 0.9 S typ.) and reduced gate charge (Qg = 4.5 nC), enabling fast switching with minimal driver burden. Its gate threshold voltage (VGS(off) = 1.0–2.5 V) ensures reliable turn-on with standard logic-level signals.
The integrated body-drain diode supports unidirectional flyback energy handling in inductive loads, with VDF = 1.0 V typ. at IF = 1 A and trr = 60 ns under specified di/dt conditions. Thermal derating follows a linear 0.9 W maximum channel dissipation at Ta = 25°C, declining to zero at 150°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Maximum blocking voltage before avalanche; defines upper limit for DC supply rails in relay/LED driver designs. |
| RDS(on) @ VGS = 10 V | 1.5 Ω typ. - Low conduction loss at full gate drive; enables <1.5 W I²R heating at 1 A DC load. |
| RDS(on) @ VGS = 4 V | 1.9 Ω typ. - Confirmed logic-level operation; supports direct interface with 3.3 V/5 V microcontrollers without level-shifting. |
| trr | 60 ns - Body-diode reverse recovery time; critical for minimizing switching loss and voltage spikes in inductive turn-off. |
| Qg | 4.5 nC - Total gate charge; determines minimum driver current and rise/fall time control in PWM applications. |
| Pch | 0.9 W @ Ta = 25°C - Continuous power dissipation limit; requires heatsinking or airflow above ~50°C ambient. |
| θch–a | 139°C/W - Junction-to-ambient thermal resistance; defines temperature rise per watt in standard TO-92MOD mounting on FR-4. |
Pinout & Package
2SK3447TZ-E uses the TO-92MOD package (RENESAS code PRSS0003DC-A), a radial-leaded, epoxy-molded plastic case with 0.35 g mass and standardized lead pitch (2.54 mm). The package supports through-hole mounting and provides mechanical robustness for low-power board-level switching.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Lead) | Source | Reference node for gate control; connects to ground or low-side return path; carries full load current in low-side switch configuration. |
| 2 (Center) | Drain | High-side connection point; interfaces with load (e.g., relay coil, LED anode); must withstand VDSS = 150 V transient stress. |
| 3 (Lead) | Gate | Control input; requires ≤±10 µA leakage at ±16 V; driven by microcontroller GPIO or dedicated gate driver with <4.5 nC charge delivery. |
Key Features
| Feature | Design Value |
|---|---|
| 4 V gate drive compatibility | Guaranteed turn-on with 3.3 V/5 V logic; eliminates need for external level shifters in MCU-driven load switching. |
| Low static RDS(on) | 1.5 Ω typ. at 10 V reduces conduction loss to <1.5 W at 1 A, easing thermal management in compact enclosures. |
| Fast switching performance | 7 ns turn-on delay + 6 ns rise time enables >10 MHz PWM operation in low-duty-cycle signal gating. |
| Integrated body diode | 1 A rated reverse recovery (trr = 60 ns) supports inductive load commutation without external freewheeling diode in many cases. |
| TO-92MOD mechanical reliability | Standardized footprint with 10.1 mm min height and 0.65 mm lead spacing ensures consistent solder joint formation and IPC-compliant assembly. |
Applications
| Relay Driver Circuit | LED Current Switch |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and HVAC controllers. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles inductive kickback via integrated body diode. Use Value: 60 ns trr minimizes voltage overshoot during coil de-energization, reducing snubber component count and PCB space. |
Use Scenario: On/off control of high-brightness indicator LEDs in industrial HMI panels and test equipment. IC Role / Device Role / Timing Role: Constant-current switch regulating LED string current with PWM dimming support. Use Value: 4.5 nC Qg enables clean 1–10 kHz PWM edges without gate ringing, preserving LED lifetime and color stability. |
| Microcontroller Peripheral Interface | Small-Signal Load Switch |
Use Scenario: Enabling/disabling peripheral sensors or communication ICs (e.g., RS-232 transceivers) from embedded MCU GPIO pins. IC Role / Device Role / Timing Role: Logic-level-controlled power gate isolating downstream circuitry from main supply rail. Use Value: 1.9 Ω RDS(on) at 4 V ensures <200 mW loss at 300 mA load, eliminating need for active voltage regulation in auxiliary power paths. |
Use Scenario: Power sequencing and fault-isolation in battery-powered portable instruments and handheld testers. IC Role / Device Role / Timing Role: Standby-mode load disconnect switch preventing quiescent current drain during sleep states. Use Value: <1 µA IDSS leakage at 150 V ensures <1 µA system standby current, extending battery life beyond 1 year in low-duty-cycle devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SK3562-Z | VDSS = 200 V, RDS(on) = 2.2 Ω @ 10 V, TO-92MOD package, same pinout. | Higher voltage margin but higher on-resistance; suitable where 150 V derating is insufficient. | Select when operating near 150 V rail with safety margin requirements exceeding 20%. |
| 2SK3018-5-TB-E | VDSS = 60 V, RDS(on) = 0.8 Ω @ 10 V, SC-59 package, different pinout (G-D-S). | Lower voltage rating but lower RDS(on); not pin-compatible due to SC-59 footprint and reversed pin order. | Choose only if redesigning layout for surface-mount and prioritizing conduction efficiency over voltage headroom. |
Compared with 2SK3447TZ-E, 2SK3562-Z offers higher blocking voltage at the cost of increased RDS(on), while 2SK3018-5-TB-E delivers lower conduction loss in SMT form but requires PCB rework and cannot replace 2SK3447TZ-E without layout changes.
Availability
2SK3447TZ-E is available at Aetrix Electronics and suitable for relay drivers, LED current switches, microcontroller peripheral interfaces, and small-signal load switches requiring stable component supply across industrial control, test equipment, and consumer electronics production.
Supply support for 2SK3447TZ-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The 2SK3447TZ-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for cost-sensitive, low-power discrete switching in non-automotive industrial and consumer systems.
FAQ
What is the maximum continuous drain current rating for the 2SK3447TZ-E?
The 2SK3447TZ-E has a continuous drain current (ID) rating of 1 A at Ta = 25°C. This value decreases with rising ambient temperature per the derating curve on page 3 of the datasheet, reaching zero at 150°C. For sustained 1 A operation, PCB copper area or forced airflow must maintain case temperature below 75°C.
Does the 2SK3447TZ-E support logic-level gate drive from a 3.3 V microcontroller?
Yes, the 2SK3447TZ-E is explicitly characterized for 4 V gate drive, with RDS(on) = 1.9 Ω typ. at VGS = 4 V and ID = 0.5 A. At 3.3 V, it remains functional with slightly higher RDS(on), making it compatible with most 3.3 V GPIO outputs without external level shifting.
What is the body-diode reverse recovery time (trr) of the 2SK3447TZ-E, and why does it matter?
The 2SK3447TZ-E specifies trr = 60 ns under IF = 1 A, di/dt = 100 A/µs, and VGS = 0. This parameter directly impacts voltage overshoot and switching loss when interrupting inductive current-critical in relay and solenoid drivers where uncontrolled flyback can damage upstream components.
Is the 2SK3447TZ-E pin-compatible with other TO-92MOD MOSFETs like the 2SK3562-Z?
Yes, the 2SK3447TZ-E and 2SK3562-Z share identical TO-92MOD (PRSS0003DC-A) packaging and pinout: Pin 1 = Source, Pin 2 = Drain, Pin 3 = Gate. This allows direct substitution where voltage and RDS(on) requirements align, though thermal and SOA margins must be re-verified.
What is the thermal resistance (θch–a) of the 2SK3447TZ-E, and how does it affect PCB layout?
The 2SK3447TZ-E has θch–a = 139°C/W, measured from channel to ambient air with standard TO-92MOD mounting on FR-4. To keep junction temperature below 150°C at 0.5 W dissipation, ambient must stay below 80°C-or additional copper pour, thermal vias, or airflow must be added to reduce effective thermal resistance.
2SK3447TZ-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.95Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 85 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92MOD
2SK3447TZ-E FAQ
1.How can I place an order for 2SK3447TZ-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3447TZ-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3447TZ-E reliable?
The price and inventory of 2SK3447TZ-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3447TZ-E is usually 5 days.
3.What payment methods are accepted for 2SK3447TZ-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3447TZ-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3447TZ-E?
2SK3447TZ-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3447TZ-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3447TZ-E?
For technical support, including 2SK3447TZ-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3447TZ-E requirements.
6.How does Aetrix verify that 2SK3447TZ-E is sourced from the original manufacturer or authorized distributors?
All 2SK3447TZ-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3447TZ-E meets industry standards.
7.What is the process for return or replacement of 2SK3447TZ-E?
All 2SK3447TZ-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3447TZ-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3447TZ-E part is unused and in its original packaging.
Return procedure for 2SK3447TZ-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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