Renesas 2SK3457(2)-AZ

Overview

2SK3457(2)-AZ from Renesas Electronics is an N-channel enhancement-mode power MOSFET in an isolated TO-220 package, designed for high-voltage switching applications including offline AC-DC converters and resonant SMPS. It delivers 800 V V_DSS, 2.2 Ω R_DS(on) at V_GS = 10 V and I_D = 3.0 A, 24 nC total gate charge, and rated avalanche energy of 73.8 mJ.

For engineers reviewing the 2SK3457(2)-AZ datasheet, 2SK3457(2)-AZ pinout, 2SK3457(2)-AZ application, or 2SK3457(2)-AZ equivalent, key selection criteria include high-voltage blocking capability, low conduction loss under 5 A DC loads, robust unclamped inductive switching performance, and thermal reliability in isolated-mount power stages.

Technical Context

This device uses a DMOS vertical structure optimized for high-voltage operation with fast switching and low gate charge. Its isolated TO-220 package enables direct heatsinking while maintaining creepage/clearance for >800 V systems, and its body diode exhibits 1.0 V forward voltage and 1310 ns reverse recovery time at 5.0 A.

The 2SK3457(2)-AZ supports hard-switched topologies up to 450 V bus voltage with turn-on delay of 17 ns and fall time of 11 ns. Its channel temperature rating of 150°C and R_th(ch–C) = 2.5°C/W support continuous operation at 50 W case dissipation when properly heatsinked.

Key Specifications

Pinout & Package

2SK3457(2)-AZ is housed in an isolated TO-220 (MP-45F) package with creepage distance ≥5 mm between drain tab and other terminals. The metal tab is electrically connected to the drain, and the plastic body provides full isolation from heatsink mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP8NK80ZFP and FQP8N80C, the 2SK3457(2)-AZ trades off higher R_DS(on) for guaranteed avalanche energy and built-in isolation - making it preferable in cost-sensitive, space-constrained flyback and forward converters where snubber reduction and simplified mechanical mounting matter most.

Availability

2SK3457(2)-AZ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial HV DC-DC supplies, and LED streetlight drivers requiring stable component supply and long-lifecycle support.

Supply support for 2SK3457(2)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and consumer applications.

The 2SK3457(2)-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for rugged, high-efficiency switching power supplies operating above 400 V DC bus.

FAQ

What is the maximum continuous drain current rating for the 2SK3457(2)-AZ?

The 2SK3457(2)-AZ has a DC drain current rating of ±5.0 A at T_C = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; actual usable current drops to ~3.0 A at T_C = 100°C per the derating curve. The device also supports ±20 A pulsed current for ≤10 µs with ≤1% duty cycle, enabling robust surge handling in flyback and forward converters.

Does the 2SK3457(2)-AZ have an integrated body diode, and what are its characteristics?

Yes, the 2SK3457(2)-AZ includes an intrinsic body diode with V_F(S–D) = 1.0 V at I_F = 5.0 A and V_GS = 0 V. Its reverse recovery time is 1310 ns and reverse recovery charge is 6.6 µC under di/dt = 50 A/µs conditions. These values indicate moderate softness - suitable for flyback freewheeling but not ideal for high-frequency synchronous rectification without external optimization.

Can the 2SK3457(2)-AZ be used in place of the original 2SK3457 without design changes?

Yes - the 2SK3457(2)-AZ is a direct replacement for the base 2SK3457, sharing identical electrical specifications, pinout, package dimensions, and thermal performance. The "(2)-AZ" suffix denotes Renesas' post-merger part numbering convention and does not reflect functional or parametric differences from the original NEC-marked device.

What is the gate-to-source voltage limit for the 2SK3457(2)-AZ, and why is it critical?

The 2SK3457(2)-AZ specifies a gate-to-source voltage rating of ±30 V. Exceeding this limit risks irreversible oxide breakdown, especially during transient events like shoot-through or gate ringing. Designers must ensure gate drive circuits clamp V_GS within this range - typically using Zener diodes or active clamps - particularly in high-dV/dt environments common in high-voltage SMPS.

How does the isolated TO-220 package of the 2SK3457(2)-AZ affect PCB layout and thermal design?

The isolated TO-220 package electrically separates the drain-connected metal tab from the source and gate leads, allowing direct mounting to a grounded heatsink without insulating hardware. This simplifies mechanical assembly and improves thermal resistance to ambient (R_th(ch–A) = 62.5°C/W), though effective heatsinking remains essential to sustain 50 W case dissipation and avoid exceeding the 150°C channel temperature limit.