Renesas 2SK3479-Z-E1-AZ

Overview

2SK3479-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs, featuring R_DS(on)1 = 11 mΩ max at V_GS = 10 V / I_D = 42 A, 100 V V_DSS, and built-in gate protection diode. It operates with ±20 V gate rating and supports pulsed drain current up to ±332 A.

For engineers reviewing the 2SK3479-Z-E1-AZ datasheet, 2SK3479-Z-E1-AZ pinout, 2SK3479-Z-E1-AZ application, or 2SK3479-Z-E1-AZ equivalent, this device is selected for high-efficiency 48 V industrial power supplies, brushed DC motor drivers, and uninterruptible power system (UPS) inverters where low conduction loss and robust avalanche capability are critical.

Technical Context

This discrete MOSFET uses a planar vertical DMOS structure optimized for switching speed and thermal stability. Its 11000 pF C_iss and 540 pF C_rss support controlled turn-on/turn-off transitions under 10 V gate drive, while the 210 nC total gate charge enables predictable drive circuit sizing.

The device integrates a monolithic gate-source ESD protection diode and exhibits single-pulse avalanche energy of 422 mJ at T_ch = 25°C with I_AS = 65 A - enabling reliable operation in inductive load switching without external snubbers in many designs.

Key Specifications

Pinout & Package

2SK3479-Z-E1-AZ is housed in the TO-220SMD (MP-25Z) surface-mount variant of the TO-220AB outline, with exposed drain tab for thermal conduction and solderable leads compatible with reflow assembly. The package features gull-wing leads and a finned metal backside for PCB-level heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with 2SK3479-Z-E1-AZ, IXFH40N10P offers greater avalanche margin but sacrifices efficiency in high-frequency switching, while IRFP4110PBF matches R_DS(on) closely but adds design complexity due to missing on-chip gate protection and non-SMT packaging.

Availability

2SK3479-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor drivers, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for 2SK3479-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3479-Z-E1-AZ belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for ruggedized switching in industrial power conversion and motor control applications where reliability under repetitive avalanche stress is essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3479-Z-E1-AZ at 100°C case temperature?

The 2SK3479-Z-E1-AZ has a DC drain current rating of ±83 A at T_C = 25°C, derating linearly to approximately ±42 A at T_C = 100°C per the datasheet's derating curve. This value assumes proper heatsinking and adherence to the specified transient thermal resistance of 1°C/W (channel-to-case). Always verify actual junction temperature using measured case temperature and power dissipation in the final layout.

Does the 2SK3479-Z-E1-AZ include a body diode, and what are its key recovery characteristics?

Yes, the 2SK3479-Z-E1-AZ integrates a parasitic body diode with V_F(S-D) = 1.0 V at I_F = 83 A and reverse recovery time t_rr = 85 ns at di/dt = 100 A/µs. Its Q_rr = 280 nC supports use in synchronous rectification topologies where controlled reverse recovery minimizes switching loss and EMI generation in the 2SK3479-Z-E1-AZ.

Can the 2SK3479-Z-E1-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No - the 2SK3479-Z-E1-AZ requires ≥4.5 V gate drive for usable R_DS(on) (13 mΩ max), and its V_GS(off) range is 1.5–2.5 V. A 3.3 V signal falls below threshold and results in high R_DS(on) and thermal runaway risk. A dedicated gate driver IC or level-shifting buffer is mandatory for reliable operation of the 2SK3479-Z-E1-AZ in production designs.

What is the significance of the "-Z" suffix in 2SK3479-Z-E1-AZ, and how does it differ from the standard 2SK3479?

The "-Z" suffix denotes the TO-220SMD (MP-25Z) surface-mount package variant, distinct from the through-hole TO-220AB version. It features gull-wing leads and a thermally enhanced metal tab optimized for reflow soldering and PCB-level heat transfer. The "-E1-AZ" suffix indicates tape-and-reel packaging per JEDEC standards with RoHS-compliant finish - confirming the 2SK3479-Z-E1-AZ is suitable for automated SMT assembly.

Is the 2SK3479-Z-E1-AZ rated for automotive applications per AEC-Q101?

No - the 2SK3479-Z-E1-AZ is classified as a Standard-grade device per Renesas documentation, intended for industrial equipment, office machinery, and consumer appliances. It lacks AEC-Q101 qualification, temperature cycling validation, and automotive-specific reliability testing. For automotive use, Renesas recommends qualified alternatives such as the RQHxx series, not the 2SK3479-Z-E1-AZ.