Renesas 2SK3480-AZ

Overview

2SK3480-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial SMPS applications. It delivers R_DS(on) = 31 mΩ max at V_GS = 10 V / I_D = 25 A, supports 100 V V_DSS, handles ±100 A pulsed drain current, and features built-in gate protection diode for ESD robustness.

For engineers reviewing the 2SK3480-AZ datasheet, 2SK3480-AZ pinout, 2SK3480-AZ application, or 2SK3480-AZ equivalent, this page provides verified package mapping (TO-220AB), confirmed avalanche capability (E_AS = 116 mJ), thermal resistance (R_th(ch–C) = 1.48 °C/W), switching timing (t_d(off) = 68 ns), and body diode performance (V_F(S–D) = 1.0 V @ 50 A).

Technical Context

The 2SK3480-AZ employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Q_G = 74 nC, Q_GD = 20 nC) enables efficient gate drive with standard 10 V logic-level controllers, while its C_iss = 3600 pF and C_rss = 190 pF support stable operation up to 500 kHz under controlled dV/dt conditions.

Thermally, it is rated for T_ch = 150 °C with R_th(ch–C) = 1.48 °C/W, allowing 84 W continuous dissipation at T_C = 25 °C. Its single-pulse avalanche rating (I_AS = 34 A, E_AS = 116 mJ) provides design margin against inductive turn-off transients in relay drivers and solenoid controls.

Key Specifications

Pinout & Package

2SK3480-AZ is packaged in TO-220AB (MP-25), a through-hole power package with isolated metal tab (Drain-connected fin) for direct heatsink mounting and mechanical stability in high-vibration environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP100N10F7 and IRF540NPBF, the 2SK3480-AZ offers superior avalanche ruggedness (116 mJ vs none) and drain-isolated TO-220AB packaging-critical for industrial systems requiring galvanic separation between heatsink and circuit ground.

Availability

2SK3480-AZ is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, DC fast charger output stages, and solenoid actuator drivers requiring stable component supply and long-term manufacturability.

Supply support for 2SK3480-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

The 2SK3480-AZ belongs to Renesas' legacy power MOSFET product line, engineered for high-reliability industrial switching applications demanding ruggedness, thermal stability, and proven avalanche performance.

FAQ

What is the maximum continuous drain current rating for the 2SK3480-AZ?

The 2SK3480-AZ is rated for I_D(DC) = ±50 A at T_C = 25 °C. This assumes proper heatsinking to maintain case temperature within specification. At elevated case temperatures, derating applies per the datasheet's total power dissipation curve-e.g., at T_C = 100 °C, usable DC current drops to approximately 28 A due to thermal limits. Always verify junction temperature using R_th(ch–C) = 1.48 °C/W and actual power dissipation in your layout.

Does the 2SK3480-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3480-AZ integrates a body diode with V_F(S–D) = 1.0 V at I_F = 50 A and reverse recovery time t_rr = 70 ns. Its Q_rr = 180 nC and di/dt = 100 A/µs reflect fast, low-loss commutation behavior suitable for freewheeling in buck converters and motor drive H-bridges. The diode is not rated for continuous conduction but performs reliably in synchronous or asynchronous switching modes.

Can the 2SK3480-AZ be driven directly by a 3.3 V microcontroller GPIO?

No-the 2SK3480-AZ requires V_GS ≥ 4.5 V for guaranteed R_DS(on) ≤ 36 mΩ, and optimal performance demands V_GS = 10 V. A 3.3 V GPIO cannot fully enhance the device, resulting in excessive conduction loss (>100 mΩ). A level-shifting gate driver (e.g., TC4420 or similar) is mandatory for reliable switching in high-current applications involving the 2SK3480-AZ.

What is the significance of the "AZ" suffix in 2SK3480-AZ?

The "AZ" suffix denotes the TO-220AB package variant per Renesas' ordering nomenclature. It confirms the device uses the MP-25 outline with isolated metal tab (Drain-connected fin), distinct from -S (TO-262), -ZJ (TO-263), or -Z (TO-220SMD) variants. All electrical specifications remain identical across suffixes; only mechanical form factor and thermal interface differ.

Is the 2SK3480-AZ suitable for automotive applications?

The 2SK3480-AZ is classified as a Standard-grade Renesas product, intended for industrial, computing, and communications equipment-not automotive or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature validation beyond –55 °C to +150 °C, or PPAP documentation. For automotive use, Renesas recommends qualified alternatives such as the R6020ENX series, not the 2SK3480-AZ.