Renesas 2SK3481(0)-Z-E1-AZ

Overview

2SK3481(0)-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive inverters. It delivers R_DS(on)1 = 50 mΩ max at V_GS = 10 V / I_D = 15 A, supports ±60 A pulsed drain current, and features built-in gate protection diode for ESD robustness. Its TO-220SMD package enables surface-mount assembly in space-constrained power stages.

For engineers reviewing the 2SK3481(0)-Z-E1-AZ datasheet, 2SK3481(0)-Z-E1-AZ pinout, 2SK3481(0)-Z-E1-AZ application, or 2SK3481(0)-Z-E1-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 68 mJ), low C_iss (2300 pF typ.), and gate charge parameters (Q_G = 48 nC, Q_GD = 12 nC) critical for hard-switched SMPS and half-bridge gate drive design.

Technical Context

This discrete MOSFET operates as a unidirectional high-side or low-side switch in non-isolated DC-DC converters and PWM motor controllers. Its gate threshold voltage range (V_GS(off) = 1.5–2.5 V) ensures reliable turn-on with standard 4.5 V logic-level drivers, while R_DS(on)2 = 58 mΩ max at V_GS = 4.5 V confirms compatibility with 5 V microcontroller outputs.

The device integrates a body diode with V_F(S-D) = 1.0 V at I_F = 30 A and t_rr = 70 ns, enabling synchronous rectification in buck topologies and freewheeling in H-bridge configurations. Its single-pulse avalanche rating (I_AS = 26 A, E_AS = 68 mJ) supports inductive load switching without external snubbers under defined test conditions.

Key Specifications

Pinout & Package

2SK3481(0)-Z-E1-AZ uses the TO-220SMD (MP-25Z) surface-mount package with isolated tab (Drain-connected fin). The package measures 10 mm × 8.5 mm × 4.8 mm and features gull-wing leads compatible with reflow soldering. Thermal resistance R_th(ch-C) = 2.23 °C/W enables efficient heat transfer to PCB copper planes or external heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP50N10T and IRF540NPBF, the 2SK3481(0)-Z-E1-AZ offers verified avalanche capability and SMT compatibility at the cost of slightly higher R_DS(on), making it optimal for compact, inductive-load industrial power modules requiring field-proven ruggedness.

Availability

2SK3481(0)-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC power supplies, brushless DC motor drives, uninterruptible power systems, and DC-DC boost converters requiring stable component supply across multi-year production cycles.

Supply support for 2SK3481(0)-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The 2SK3481(0)-Z-E1-AZ belongs to Renesas' legacy power MOSFET product line engineered for high-reliability industrial switching applications, emphasizing avalanche ruggedness, low gate charge, and surface-mount thermal performance.

FAQ

What is the maximum continuous drain current rating for the 2SK3481(0)-Z-E1-AZ at case temperature 25°C?

The 2SK3481(0)-Z-E1-AZ has a maximum continuous drain current I_D(DC) of ±30 A at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain case temperature at 25°C; derating applies above this temperature per the published derating curve. The 2SK3481(0)-Z-E1-AZ must not exceed this limit to ensure long-term reliability and avoid thermal runaway.

Does the 2SK3481(0)-Z-E1-AZ have built-in gate protection, and how does it affect circuit design?

Yes, the 2SK3481(0)-Z-E1-AZ includes a built-in gate-source protection diode rated for ±20 V, as stated in its Features section. This Zener-type clamp mitigates ESD and transient overvoltage events on the gate terminal, reducing the need for external gate protection components. However, Renesas explicitly notes that an additional external protection circuit remains necessary if voltages exceeding the rated ±20 V may occur in the final application. The 2SK3481(0)-Z-E1-AZ thus simplifies layout but does not eliminate all gate protection requirements.

Can the 2SK3481(0)-Z-E1-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No, the 2SK3481(0)-Z-E1-AZ is not guaranteed to operate reliably with a 3.3 V gate drive. Its gate threshold voltage V_GS(off) ranges from 1.5 V to 2.5 V, but R_DS(on)2 is only specified at V_GS = 4.5 V (58 mΩ max). At 3.3 V, the device enters the linear region with significantly higher on-resistance and unpredictable conduction-potentially causing thermal failure. The 2SK3481(0)-Z-E1-AZ requires ≥4.5 V gate drive for specified performance and should be paired with a dedicated gate driver or level shifter when used with 3.3 V controllers.

What is the significance of the "Z" suffix in 2SK3481(0)-Z-E1-AZ, and how does it impact packaging?

Per the Ordering Information table in the datasheet, the "Z" suffix denotes the TO-220SMD (MP-25Z) surface-mount package variant of the 2SK3481. This package features gull-wing leads and an isolated metal tab, enabling automated reflow assembly and improved thermal coupling to PCB copper. The "Z" distinguishes it from through-hole variants like 2SK3481 (TO-220AB) and 2SK3481-S (TO-262). The 2SK3481(0)-Z-E1-AZ is therefore optimized for high-density power boards where manual through-hole insertion is impractical.

How does the avalanche energy rating of the 2SK3481(0)-Z-E1-AZ compare to standard switching requirements in motor drive applications?

The 2SK3481(0)-Z-E1-AZ is rated for single-pulse avalanche energy E_AS = 68 mJ under defined test conditions (V_DD = 50 V, I_AS = 26 A, R_G = 25 Ω). In BLDC motor drives, this rating covers worst-case inductive turn-off events-such as sudden phase current interruption-without requiring external snubbers. While not intended for repetitive avalanche, this validated ruggedness makes the 2SK3481(0)-Z-E1-AZ more robust than non-avalanche-rated MOSFETs in real-world motor commutation, directly enhancing system reliability.