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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3481-AZ

Name: 2SK3481-AZ
Brand: Renesas
SKU: 2SK3481-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3481-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: 2SK3481-AZ.pdf

Description:: MOSFET N-CH 100V 30A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK3481-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on)1 = 50 mΩ max at V_GS = 10 V / I_D = 15 A, supports ±30 A DC drain current, and features built-in gate protection diode and 100 V V_DSS rating - enabling robust operation in 48 V bus systems with fast switching (t_d(on) = 13 ns, t_f = 5.0 ns).

For engineers reviewing the 2SK3481-AZ datasheet, 2SK3481-AZ pinout, 2SK3481-AZ application, or 2SK3481-AZ equivalent, key selection criteria include its TO-220AB package thermal performance (R_th(ch-C) = 2.23 °C/W), avalanche capability (E_AS = 68 mJ), and low gate charge (Q_G = 48 nC) for efficient gate driver sizing in hard-switched topologies.

Technical Context

This discrete power switch operates in enhancement-mode with gate threshold voltage V_GS(off) = 1.5–2.5 V and exhibits strong transconductance |y_fs| = 9–18 S at I_D = 15 A. Its body diode has V_F(S-D) = 1.0 V at I_F = 30 A and t_rr = 70 ns, supporting synchronous rectification and freewheeling in buck/boost converters.

The device is rated for 150 °C channel temperature and includes single-pulse avalanche ruggedness (I_AS = 26 A, E_AS = 68 mJ under defined test conditions), making it suitable for inductive load switching where voltage transients exceed V_DSS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V nominal bus systems with ≥2× voltage margin for transient clamping.
R_DS(on)1	50 mΩ max @ V_GS = 10 V, I_D = 15 A - Enables <1.1 W conduction loss at 15 A, reducing heatsink requirements.
I_D(DC)	±30 A @ T_C = 25°C - Sustains continuous high-current loads in motor H-bridge or SMPS primary switches.
Q_G	48 nC - Determines gate driver peak current demand; enables efficient 100 kHz+ switching with low-power drivers.
E_AS	68 mJ - Quantifies energy-handling capability during unclamped inductive switching events.
C_iss	2300 pF typ - Impacts gate drive loop stability and Miller effect; requires careful PCB layout to minimize ringing.
T_ch max	150°C - Sets maximum junction temperature limit for thermal design and derating calculations.

Pinout & Package

2SK3481-AZ is housed in a TO-220AB package with isolated metal tab (Drain-connected fin), optimized for vertical mounting and heatsink attachment. Thermal resistance from channel to case is 2.23 °C/W, enabling high-power dissipation when properly mounted.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires external ESD protection due to integrated gate-source diode only providing limited static discharge immunity.
2 (Drain)	Main current path output	Connected internally to metal tab (fin); must be electrically isolated from heatsink unless system ground reference permits.
3 (Source)	Main current path return	Serves as reference node for gate drive; layout must minimize source inductance to preserve switching speed and reduce oscillation risk.
4 (Fin/Drain)	Thermal & electrical connection	Exposed metal tab is Drain potential; provides primary thermal path to heatsink - critical for maintaining T_ch ≤ 150°C under 56 W P_T1.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	R_DS(on)2 = 58 mΩ max enables logic-level gate drive compatibility with 5 V microcontrollers and PWM controllers.
Built-in gate protection diode	ESD-rated diode between Gate and Source reduces need for external TVS in low-risk environments - not sufficient for high-energy transients.
Low C_iss and Q_GD	C_iss = 2300 pF and Q_GD = 12 nC minimize Miller plateau duration and improve hard-switching efficiency.
Avalanche-rated structure	Specified I_AS = 26 A and E_AS = 68 mJ allow safe operation in unclamped inductive turn-off without external snubbers.
Body diode with fast recovery	t_rr = 70 ns and Q_rr = 160 nC support moderate-frequency freewheeling in non-synchronous converters.

Applications

DC Motor Drive	Industrial Power Supply
Use Scenario: Half-bridge or H-bridge control of brushed DC motors up to 500 W in factory automation equipment. IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 30 A peak currents with PWM frequencies up to 20 kHz. Use Value: Low R_DS(on) minimizes I²R losses during extended duty cycles; avalanche rating absorbs back-EMF spikes during abrupt stop commands.	Use Scenario: Primary-side switching element in 100–500 W offline flyback or forward converters for industrial PLC power modules. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with V_DS stress up to 85 V during line surges. Use Value: 100 V V_DSS and 68 mJ E_AS ensure reliable operation under 300 VAC input transients without additional clamping circuitry.
Uninterruptible Power System	DC-DC Converter Stage
Use Scenario: Battery isolation and transfer switching in 24/48 V UPS units requiring fail-safe conduction paths. IC Role / Device Role / Timing Role: Bidirectional blocking switch controlling battery-to-bus and bus-to-battery current flow during switchover. Use Value: Symmetrical ±30 A DC rating and low V_F(S-D) = 1.0 V enable efficient reverse conduction during battery backup mode.	Use Scenario: Synchronous rectifier or main switch in isolated 12 V–48 V input DC-DC modules for telecom and networking equipment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in phase-shifted full-bridge topologies. Use Value: Fast t_f = 5.0 ns and low Q_G = 48 nC reduce switching losses at 200–500 kHz, improving overall converter efficiency by ≥1.2%.

DC Motor Drive

Industrial Power Supply

Use Scenario: Half-bridge or H-bridge control of brushed DC motors up to 500 W in factory automation equipment.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 30 A peak currents with PWM frequencies up to 20 kHz.

Use Value: Low R_DS(on) minimizes I²R losses during extended duty cycles; avalanche rating absorbs back-EMF spikes during abrupt stop commands.

Use Scenario: Primary-side switching element in 100–500 W offline flyback or forward converters for industrial PLC power modules.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with V_DS stress up to 85 V during line surges.

Use Value: 100 V V_DSS and 68 mJ E_AS ensure reliable operation under 300 VAC input transients without additional clamping circuitry.

Uninterruptible Power System

DC-DC Converter Stage

Use Scenario: Battery isolation and transfer switching in 24/48 V UPS units requiring fail-safe conduction paths.

IC Role / Device Role / Timing Role: Bidirectional blocking switch controlling battery-to-bus and bus-to-battery current flow during switchover.

Use Value: Symmetrical ±30 A DC rating and low V_F(S-D) = 1.0 V enable efficient reverse conduction during battery backup mode.

Use Scenario: Synchronous rectifier or main switch in isolated 12 V–48 V input DC-DC modules for telecom and networking equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in phase-shifted full-bridge topologies.

Use Value: Fast t_f = 5.0 ns and low Q_G = 48 nC reduce switching losses at 200–500 kHz, improving overall converter efficiency by ≥1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100NF10	V_DSS = 100 V, R_DS(on) = 12 mΩ @ 10 V, TO-220 package, no integrated gate protection diode	Lower on-resistance but higher gate charge (Q_G = 140 nC); requires external gate protection	Preferred where ultra-low conduction loss dominates over gate drive complexity and cost.
IRF540NPBF	V_DSS = 100 V, R_DS(on) = 44 mΩ @ 10 V, TO-220AB, no avalanche rating specified	Lacks published E_AS or I_AS; lower C_iss (1350 pF) but higher Q_GD (21 nC)	Suitable for non-inductive or low-energy switching where avalanche ruggedness is not required.

Compared with STP100NF10 and IRF540NPBF, the 2SK3481-AZ offers balanced trade-offs: moderate R_DS(on), verified avalanche capability, and integrated gate protection - making it optimal for cost-sensitive industrial switching where reliability under transient stress is mandatory but ultra-low on-resistance is secondary.

Availability

2SK3481-AZ is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power systems, and DC-DC converter stages requiring stable component supply across multi-year production cycles.

Supply support for 2SK3481-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK3481-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-reliability, high-current switching in industrial power conversion and motor control applications.

FAQ

What is the gate threshold voltage range for the 2SK3481-AZ?

The 2SK3481-AZ has a gate threshold voltage V_GS(off) of 1.5–2.5 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 5 V logic-level drivers while maintaining adequate noise margin against false triggering in noisy industrial environments. The 2SK3481-AZ's threshold is temperature-stable, varying predictably from −40°C to +150°C per published curves.

Does the 2SK3481-AZ have avalanche capability, and how is it specified?

Yes, the 2SK3481-AZ is rated for single-pulse avalanche with I_AS = 26 A and E_AS = 68 mJ under defined test conditions (V_DD = 50 V, R_G = 25 Ω, starting T_ch = 25°C). This specification confirms ruggedness against unclamped inductive switching events - a critical requirement for relay replacement and solenoid driving. The 2SK3481-AZ datasheet provides derating curves for E_AS vs. starting channel temperature.

What is the thermal resistance from channel to case for the 2SK3481-AZ, and why does it matter?

The 2SK3481-AZ has R_th(ch-C) = 2.23 °C/W, measured from channel to case (metal tab). This value directly determines the temperature rise across the internal silicon-to-heatsink path. For example, at 56 W dissipation (its P_T1 rating), the channel rises 125°C above case temperature - so maintaining case temperature ≤25°C is essential to hold T_ch ≤150°C. The 2SK3481-AZ's low R_th(ch-C) enables compact thermal design in space-constrained industrial enclosures.

Can the 2SK3481-AZ be used with 5 V gate drive, and what is its R_DS(on) at that voltage?

Yes, the 2SK3481-AZ is fully compatible with 5 V gate drive. At V_GS = 4.5 V and I_D = 15 A, its R_DS(on)2 is guaranteed ≤58 mΩ (typ. 44 mΩ), enabling efficient operation without level-shifting circuitry. This makes the 2SK3481-AZ suitable for direct interfacing with microcontrollers, gate drivers, and PWM ICs operating at 5 V logic levels - a key advantage over higher-threshold alternatives requiring 10 V drive.

Is the 2SK3481-AZ RoHS compliant, and what is its quality grade?

The 2SK3481-AZ meets RoHS Directive requirements for restricted substances, as confirmed by Renesas' environmental compliance documentation. Its quality grade is "Standard", per Renesas' classification - meaning it is qualified for use in industrial robots, machine tools, power supplies, and office equipment, but not for automotive, medical life-support, or aerospace applications without explicit written consent from Renesas Electronics.

2SK3481-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 56W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

2SK3481-AZ FAQ

1.How can I place an order for 2SK3481-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3481-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3481-AZ reliable?

The price and inventory of 2SK3481-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3481-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3481-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3481-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3481-AZ?

2SK3481-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3481-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3481-AZ?

For technical support, including 2SK3481-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3481-AZ requirements.

6.How does Aetrix verify that 2SK3481-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3481-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3481-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3481-AZ?

All 2SK3481-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3481-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3481-AZ part is unused and in its original packaging.

Return procedure for 2SK3481-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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