Renesas 2SK3481-Z-AZ

Overview

2SK3481-Z-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive inverters, featuring R_DS(on)1 = 50 mΩ max at V_GS = 10 V / I_D = 15 A, V_DSS = 100 V, and built-in gate protection diode. It operates with ±20 V gate voltage rating and supports pulsed drain current up to ±60 A.

For engineers reviewing the 2SK3481-Z-AZ datasheet, 2SK3481-Z-AZ pinout, 2SK3481-Z-AZ application, or 2SK3481-Z-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 68 mJ), thermal resistance (R_th(ch–C) = 2.23 °C/W), low C_iss (2300 pF typ.), and TO-220SMD package compatibility with surface-mount reflow assembly.

Technical Context

This discrete power MOSFET uses a planar vertical DMOS structure optimized for fast switching and robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) enables reliable turn-on with standard 4.5 V logic-level drivers, while the integrated gate protection diode mitigates ESD risk during handling and PCB assembly.

The device's dynamic characteristics-including t_d(on) = 13 ns, t_r = 10 ns, Q_G = 48 nC, and Q_GD = 12 nC-support high-frequency PWM operation up to 100 kHz in hard-switched topologies. Its body diode exhibits t_rr = 70 ns and Q_rr = 160 nC under I_F = 30 A / di/dt = 100 A/µs conditions, enabling moderate-speed freewheeling in half-bridge configurations.

Key Specifications

Pinout & Package

2SK3481-Z-AZ is housed in the TO-220SMD (MP-25Z) package - a surface-mount variant of TO-220AB with isolated drain tab and gull-wing leads for automated reflow assembly. The package features a thermally enhanced metal tab (Drain) and three solderable terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP100N10F7 and IRF540NPBF, the 2SK3481-Z-AZ provides verified avalanche energy tolerance and integrated gate protection-critical for field-deployed industrial controls-while its TO-220SMD footprint supports automated manufacturing without sacrificing thermal performance (R_th(ch–C) = 2.23 °C/W).

Availability

2SK3481-Z-AZ is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and solenoid control circuits requiring stable component supply across multi-year production cycles.

Supply support for 2SK3481-Z-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and automotive markets.

The 2SK3481-Z-AZ belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for ruggedized switching in factory automation, power conversion, and electromechanical actuation systems where reliability under repetitive stress is mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK3481-Z-AZ at case temperature of 75°C?

The 2SK3481-Z-AZ has a DC drain current rating of ±30 A at T_C = 25°C. At T_C = 75°C, derating applies: using the total power dissipation curve, PT drops to ~32 W, and with R_DS(on) ≈ 55 mΩ at elevated temperature, the practical continuous I_D is ~24 A. This value is confirmed in the "Total Power Dissipation vs. Case Temperature" graph on page 3 of the D15063EJ1V0DS datasheet. Always verify thermal design margins using R_th(ch–C) = 2.23 °C/W for the 2SK3481-Z-AZ.

Does the 2SK3481-Z-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3481-Z-AZ integrates a source-drain body diode with forward voltage V_F(S–D) = 1.0 V at I_F = 30 A and reverse recovery time t_rr = 70 ns under di/dt = 100 A/µs. Its Q_rr is 160 nC, and it conducts bidirectionally-critical for freewheeling in half-bridge and synchronous rectifier topologies. These values are measured with V_GS = 0 V and appear in the "Electrical Characteristics" table on page 2 of the 2SK3481-Z-AZ datasheet.

Can the 2SK3481-Z-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No-the 2SK3481-Z-AZ has a gate threshold voltage V_GS(off) of 1.5–2.5 V, but its R_DS(on) is only guaranteed at V_GS ≥ 4.5 V (58 mΩ max) and fully specified at 10 V (50 mΩ max). A 3.3 V drive yields high and unstable on-resistance (>150 mΩ), causing excessive heating. A dedicated gate driver (e.g., TC4427A) or level-shifting circuit is required for reliable operation of the 2SK3481-Z-AZ in production systems.

What is the thermal resistance from channel to ambient (R_th(ch–A)) for the 2SK3481-Z-AZ in standard JEDEC 2S2P layout?

The datasheet specifies R_th(ch–A) = 83.3 °C/W for the 2SK3481-Z-AZ under natural convection on a standard FR-4 board with 1 in² (6.45 cm²) copper area. This value assumes no heatsink and reflects worst-case ambient cooling. For thermal design, always use R_th(ch–C) = 2.23 °C/W with an appropriately sized heatsink, since the metal tab is the primary thermal path. This parameter is listed in the "Thermal Resistance" table on page 1 of the 2SK3481-Z-AZ datasheet.

Is the 2SK3481-Z-AZ RoHS compliant and lead-free?

Yes-the 2SK3481-Z-AZ is RoHS compliant and lead-free. Renesas confirms compliance with EU Directive 2011/65/EU (RoHS 2) in its environmental documentation, and the device carries the "lead-free" marking per J-STD-609. The TO-220SMD package uses matte tin plating on leads and meets MSL Level 1 moisture sensitivity. Full compliance data is available in Renesas' Material Declaration Report for the 2SK3481-Z-AZ.