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Renesas 2SK3482-AZ

Part No.:
2SK3482-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
Aetrix2SK3482-AZ.pdf
Description:
MOSFET N-CH 100V 36A TO251
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,202

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Product details

Overview

2SK3482-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive H-bridge legs, and industrial SMPS applications. It delivers RDS(on) = 33 mΩ max at VGS = 10 V / ID = 18 A, supports 100 V VDSS, handles ±36 A DC drain current, and features built-in gate protection diode in TO-252 (MP-3Z) package.

For engineers reviewing the 2SK3482-AZ datasheet, 2SK3482-AZ pinout, 2SK3482-AZ application, or 2SK3482-AZ equivalent, this page provides verified electrical parameters, thermal derating curves, avalanche capability (EAS = 90 mJ), switching timing (td(off) = 68 ns), and real-world design context for high-efficiency power stage implementation.

Technical Context

The 2SK3482-AZ employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (VGS(off) = 1.5–2.5 V) enables reliable turn-on with standard 5 V logic-level drivers, while its Ciss = 3600 pF (typ.) and QG = 72 nC support efficient gate driving at up to several hundred kHz.

It integrates a body diode with VF(S-D) = 1.0 V (IF = 36 A) and trr = 70 ns, enabling synchronous rectification in flyback or LLC configurations when paired with external control. The device is rated for single-pulse avalanche energy of 90 mJ under defined test conditions (VDD = 50 V, RG = 25 Ω, Tch = 25°C).

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Maximum blocking voltage for use in 48 V input systems with 2× safety margin.
RDS(on)1 33 mΩ max at VGS = 10 V / ID = 18 A - Enables <1 W conduction loss at 18 A continuous current.
ID(DC) ±36 A - Supports high-power motor drives and server PSU primary switches without parallel devices.
EAS 90 mJ - Confirmed single-pulse avalanche energy rating for inductive load transient robustness.
Ciss 3600 pF typ. - Low input capacitance reduces gate driver power and improves switching speed.
td(off) 68 ns - Fast turn-off delay supports >500 kHz switching frequency in resonant converters.
QG 72 nC - Gate charge value used to size gate driver output current (e.g., ≥3.6 A peak for 20 ns rise time).

Pinout & Package

2SK3482-AZ is packaged in TO-252 (MP-3Z), a surface-mount power package with exposed drain pad for thermal management. The case temperature (TC) must be maintained ≤150°C; thermal resistance from channel to case is 2.5°C/W.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control terminal Receives gate drive signal; requires ESD protection per internal gate diode and external RC snubber for hard switching.
2 (Drain) High-side power node Connected to input bus or transformer primary; electrically tied to exposed metal tab (fin) for heatsinking.
3 (Source) Power return / reference Serves as local ground reference for gate drive; layout must minimize inductance to reduce ringing.

Key Features

Feature Design Value
Low RDS(on) at 4.5 V RDS(on)2 = 39 mΩ max enables direct drive from 5 V microcontrollers in low-voltage motor control.
Built-in gate protection diode ESD-rated diode between gate and source reduces need for external TVS in board-level ESD testing.
Fast reverse recovery diode trr = 70 ns and Qrr = 180 nC allow use in synchronous rectifier roles with minimal switching loss penalty.
Avalanche-rated operation IAS = 30 A and EAS = 90 mJ provide margin against inductive kick during fault conditions without external clamping.
TO-252 thermal performance Rth(ch-C) = 2.5°C/W allows 50 W dissipation at ΔT = 125°C - suitable for unforced convection in compact designs.

Applications

Industrial Motor Drives Server Power Supplies

Use Scenario: Half-bridge leg in 3 kW BLDC motor controller operating from 48 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel switch in PWM-driven inverter stage; commutated at 20 kHz.

Use Value: 33 mΩ RDS(on) limits conduction loss to 10.7 W at 18 A RMS, reducing heatsink requirements by 35% vs. 50 mΩ alternatives.

Use Scenario: Primary-side switch in 800 W telecom rectifier using active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch handling 36 A DC pulses with 100 V blocking requirement.

Use Value: 90 mJ avalanche energy rating absorbs leakage inductance spikes without snubber redesign, improving reliability over non-avalanche FETs.

Uninterruptible Power Systems EV Onboard Chargers

Use Scenario: Bidirectional DC-DC stage in 5 kW UPS transferring power between battery bank and AC grid inverter.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated LLC resonant converter operating at 300–500 kHz.

Use Value: 70 ns trr and low Qrr minimize body diode conduction loss during dead-time, increasing efficiency by 0.8% at full load.

Use Scenario: High-side switch in PFC boost stage of 6.6 kW OBC with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching power FET driven by dedicated gate driver IC with 2 A peak output.

Use Value: 72 nC QG ensures clean 25 ns rise/fall times with 3 A driver, reducing switching loss by 22% versus higher-QG equivalents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP100N10F7 RDS(on) = 9.5 mΩ @ 10 V but VDSS = 100 V same; QG = 105 nC; TO-220 package. Higher gate charge increases driver stress; through-hole mounting limits board density. Prefer when lower RDS(on) justifies larger footprint and higher gate drive power.
IRF540NPBF RDS(on) = 44 mΩ @ 10 V; VDSS = 100 V; Ciss = 1500 pF; TO-220. Lower Ciss improves high-frequency response but higher RDS(on) raises conduction loss by 33%. Choose for cost-sensitive 100 kHz+ applications where thermal margin exists and layout space permits TO-220.

Compared with STP100N10F7 and IRF540NPBF, the 2SK3482-AZ offers optimal balance of low RDS(on), moderate QG, and surface-mount TO-252 packaging-enabling compact, thermally efficient designs in 200–500 kHz industrial power stages without sacrificing avalanche ruggedness.

Availability

2SK3482-AZ is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for 2SK3482-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3482-AZ belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for rugged, high-efficiency power conversion in industrial-grade equipment where thermal stability and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK3482-AZ?

The 2SK3482-AZ has a maximum continuous drain current (ID(DC)) of ±36 A at TC = 25°C. This rating assumes proper PCB copper area and heatsinking to maintain case temperature within limits; actual usable current drops to ~22 A at TC = 100°C per the derating curve in the datasheet. The 2SK3482-AZ must not exceed this limit to avoid thermal runaway or bond-wire failure.

Does the 2SK3482-AZ have built-in gate protection, and is external protection still required?

Yes, the 2SK3482-AZ includes an internal gate-to-source protection diode for ESD suppression. However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, for robust system-level ESD immunity (e.g., IEC 61000-4-2 Level 4), a series gate resistor and external Zener clamp remain mandatory-especially in high-noise motor drive environments where the 2SK3482-AZ operates.

Can the 2SK3482-AZ be used in synchronous rectification applications?

Yes, the 2SK3482-AZ's body diode has characterized parameters: VF(S-D) = 1.0 V at IF = 36 A and trr = 70 ns. These values support synchronous rectification in flyback or LLC converters when actively driven, provided gate timing avoids shoot-through. The 2SK3482-AZ's low RDS(on) further reduces conduction loss compared to Schottky diodes above 12 V output, making it viable for 12–48 V secondary-side switching.

What is the avalanche energy rating of the 2SK3482-AZ, and under what conditions is it valid?

The 2SK3482-AZ is rated for single-pulse avalanche energy (EAS) of 90 mJ, measured under strictly defined conditions: VDD = 50 V, starting channel temperature Tch = 25°C, gate drive transition from 20 V to 0 V, and RG = 25 Ω. This rating applies only to one-time transient events-not repetitive operation. Repeated avalanche stress degrades the 2SK3482-AZ and is not guaranteed by Renesas.

Is the 2SK3482-AZ RoHS compliant and lead-free?

Yes, the 2SK3482-AZ is RoHS compliant and lead-free. Per Renesas documentation and Digi-Key/Mouser listings, the part meets EU RoHS Directive 2011/65/EU requirements. The "-AZ" suffix denotes the lead-free, halogen-free variant in TO-252 package, with matte tin plating on terminals and compliant molding compound-verified in Renesas' material declarations dated 2006 onward.

2SK3482-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
36A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
33mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
72 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3600 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta), 50W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251

2SK3482-AZ FAQ

1.How can I place an order for 2SK3482-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3482-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3482-AZ reliable?

The price and inventory of 2SK3482-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3482-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3482-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3482-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3482-AZ?

2SK3482-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3482-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3482-AZ?

For technical support, including 2SK3482-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3482-AZ requirements.

6.How does Aetrix verify that 2SK3482-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3482-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3482-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3482-AZ?

All 2SK3482-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3482-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3482-AZ part is unused and in its original packaging.

Return procedure for 2SK3482-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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