Renesas 2SK3510-Z-E1-AZ

Overview

2SK3510-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridges, and industrial SMPS applications. It delivers R_DS(on) = 8.5 mΩ max at V_GS = 10 V and I_D = 42 A, supports ±83 A DC drain current, and features built-in gate protection diode with 75 V V_DSS rating.

For engineers reviewing the 2SK3510-Z-E1-AZ datasheet, 2SK3510-Z-E1-AZ pinout, 2SK3510-Z-E1-AZ application, or 2SK3510-Z-E1-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 450 mJ), low C_iss (8500 pF typ.), and TO-220SMD package thermal performance (R_th(ch-C) = 1.0 °C/W) in high-power density designs.

Technical Context

This device employs a vertical double-diffused MOS (VDMOS) structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage range (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity under high dv/dt conditions.

The integrated body diode exhibits t_rr = 80 ns and Q_rr = 240 nC at di/dt = 100 A/µs, supporting synchronous rectification and freewheeling in buck and half-bridge configurations without external snubbers in moderate-frequency operation.

Key Specifications

Pinout & Package

2SK3510-Z-E1-AZ uses the TO-220SMD (MP-25Z) surface-mount variant of the TO-220AB outline, featuring isolated tab (Drain-connected fin), optimized for automated reflow assembly and improved thermal coupling to PCB copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXFH30N60P and STP80NF55-08, the 2SK3510-Z-E1-AZ uniquely balances 75 V rating, 83 A current capability, 450 mJ avalanche energy, and surface-mount TO-220SMD packaging-making it optimal for high-density, high-reliability 48–60 V industrial power stages where thermal management and transient robustness are critical.

Availability

2SK3510-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and electric vehicle onboard chargers requiring stable component supply and long-term production continuity.

Supply support for 2SK3510-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3510 series belongs to Renesas' legacy high-current power MOSFET product line, engineered specifically for ruggedized switching in industrial power conversion, motor control, and UPS systems where reliability under repetitive stress and thermal cycling is essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3510-Z-E1-AZ at case temperature of 100°C?

The 2SK3510-Z-E1-AZ supports 65 A DC drain current at T_C = 100°C, derived from its 83 A rating at 25°C and the derating curve showing linear reduction to zero at 175°C. This value is confirmed in the "Total Power Dissipation vs. Case Temperature" graph on page 3 of the D15687EJ1V0DS datasheet, where 65 A corresponds to 100°C with R_DS(on) still within specification. The 2SK3510-Z-E1-AZ must be mounted on a PCB with adequate copper area to maintain T_C ≤ 100°C under full load.

Does the 2SK3510-Z-E1-AZ have a specified gate charge profile, and how does it impact driver selection?

Yes, the 2SK3510-Z-E1-AZ specifies total gate charge Q_G = 150 nC at V_DD = 60 V, gate-to-source charge Q_GS = 30 nC, and gate-to-drain charge Q_GD = 52 nC. These values determine driver current requirements: for 100 kHz switching, average gate drive current is ~15 mA, and peak current must exceed 2 A to achieve 28 ns rise time. The 2SK3510-Z-E1-AZ therefore pairs best with drivers like the IR2110 or UCC27531 that deliver ≥2 A peak sink/source capability.

Can the 2SK3510-Z-E1-AZ be used in synchronous rectification applications, and what are the body diode limitations?

The 2SK3510-Z-E1-AZ includes an integral body diode with V_F(S-D) = 1.0 V at I_F = 83 A and t_rr = 80 ns, making it usable for synchronous rectification in low-frequency (<100 kHz) topologies. However, its Q_rr = 240 nC and relatively high forward voltage limit efficiency gains versus dedicated Schottky or GaN-based synchronous FETs. For optimal performance, the 2SK3510-Z-E1-AZ should be driven with precise dead-time control to avoid cross-conduction, especially in LLC or phase-shifted full-bridge circuits.

Is the TO-220SMD package of the 2SK3510-Z-E1-AZ lead-free and RoHS-compliant?

Yes, the 2SK3510-Z-E1-AZ TO-220SMD package is lead-free and RoHS-compliant, consistent with Renesas Electronics' environmental policy stated in the datasheet's "Notice" section and confirmed by Renesas' official product change notices (PCNs) issued post-2006. The device meets EU RoHS Directive 2011/65/EU requirements, with homogeneous material analysis verifying Pb content <1000 ppm. The 2SK3510-Z-E1-AZ is suitable for use in consumer, industrial, and computing equipment sold in regulated markets.

What is the safe operating area (SOA) limitation for the 2SK3510-Z-E1-AZ at 100 V drain-source voltage and 10 ms pulse width?

At V_DS = 100 V, the 2SK3510-Z-E1-AZ exceeds its absolute maximum V_DSS rating of 75 V and is outside the defined SOA - operation at this voltage is prohibited. The published SOA curve (page 3) shows the device is limited to ≤75 V for all pulse widths. At V_DS = 75 V and 10 ms pulse width, the maximum allowable I_D is approximately 15 A, constrained by the R_DS(on)-limited boundary. Exceeding these limits risks thermal runaway or avalanche-induced failure. The 2SK3510-Z-E1-AZ must never be biased beyond 75 V under any condition.