Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3511-S19-AY

Name: 2SK3511-S19-AY
Brand: Renesas
SKU: 2SK3511-S19-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SK3511-S19-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3511-S19-AY.pdf

Description:: POWER FIELD-EFFECT TRANSISTOR

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:16,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SK3511-S19-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on) = 12.5 mΩ max at V_GS = 10 V and I_D = 42 A, supports ±260 A pulsed drain current, and features built-in gate protection diode for ESD robustness. Its TO-220AB package enables efficient heat dissipation in high-power converter topologies.

For engineers reviewing the 2SK3511-S19-AY datasheet, 2SK3511-S19-AY pinout, 2SK3511-S19-AY application, or 2SK3511-S19-AY equivalent, key selection criteria include avalanche energy rating (E_AS = 250 mJ), low C_iss (5900 pF typ.), and channel temperature limit (T_ch = 150°C) for reliable operation in thermally constrained designs.

Technical Context

This device operates as a unidirectional high-side or low-side switch with voltage-controlled gate drive. Its forward transfer admittance |y_fs| ranges from 21 to 45 S at V_DS = 10 V and I_D = 42 A, and gate threshold voltage V_GS(off) is specified between 2.0 V and 4.0 V at I_D = 1 mA.

The integrated body diode exhibits V_F(S-D) = 1.1 V at I_F = 83 A and reverse recovery time t_rr = 70 ns under di/dt = 100 A/µs, enabling use in synchronous rectification and freewheeling paths where fast recovery is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche breakdown; defines safe operating range in 48 V bus systems.
R_DS(on)	12.5 mΩ max - Low conduction loss at 42 A; reduces I²R heating in continuous high-current switching.
I_D(DC)	±83 A - Continuous drain current rating at T_C = 25°C; sets thermal design baseline for heatsink sizing.
E_AS	250 mJ - Single-pulse avalanche energy capability; enables ruggedness against inductive load transients without external snubbers.
C_iss	5900 pF typ. - Input capacitance at V_DS = 10 V; determines gate drive power and switching speed trade-offs.
Q_G	100 nC - Total gate charge required for full turn-on; impacts driver IC selection and gate resistor sizing.
T_ch max	150°C - Maximum allowable channel temperature; constrains PCB layout, copper area, and thermal interface design.

Pinout & Package

2SK3511-S19-AY uses the TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin). The package provides mechanical stability and direct thermal path to heatsinks via the exposed Drain tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Voltage-controlled input; requires ≥10 V for full enhancement; protected by internal Zener diode.
2 (Drain)	High-side current path	Connected to metal tab; electrically and thermally coupled to heatsink; must be insulated if mounting to grounded chassis.
3 (Source)	Reference node	Return path for load current; establishes common reference for gate drive; ties to system ground in low-side configurations.
4 (Fin/Drain)	Thermal & electrical node	Exposed metal surface tied internally to Drain; primary heat dissipation path; requires thermal compound and isolation per safety standards.

Key Features

Feature	Design Value
Super low R_DS(on)	12.5 mΩ max at V_GS = 10 V enables <1 W conduction loss at 80 A, reducing thermal stress in compact power stages.
Built-in gate protection diode	Zener-clamped gate-source diode suppresses ESD events up to ±20 V, lowering need for external TVS on gate traces.
High avalanche energy rating	250 mJ single-pulse capability allows operation in unclamped inductive switching without failure under defined test conditions.
Low output capacitance	C_oss = 810 pF minimizes switching losses during hard-commutation and improves efficiency in high-frequency SMPS.
Fast switching times	t_d(on) = 30 ns, t_f = 12 ns enable >500 kHz operation in resonant and phase-shifted topologies with controlled dV/dt.

Applications

Industrial DC Motor Drives	Server PSU Primary Switches
Use Scenario: High-current H-bridge control for 24–48 V brushed DC motors in CNC feed axes and automated conveyors. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 60–80 A peak currents with repetitive avalanche tolerance. Use Value: R_DS(on) ≤ 12.5 mΩ limits conduction loss to <0.8 W at 80 A, enabling air-cooled designs without forced ventilation.	Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW server power supplies using LLC resonant topology. IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch operating at 300–500 kHz with low C_iss and fast fall time. Use Value: C_iss = 5900 pF and t_f = 12 ns reduce gate drive loss and improve zero-voltage switching margin across line/load variations.
Uninterruptible Power Supplies	Welding Inverter Stages
Use Scenario: Bidirectional DC-link switching in online UPS inverters delivering 3 kVA with battery backup. IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch supporting 100% duty cycle operation with body diode conduction during dead-time. Use Value: V_F(S-D) = 1.1 V and t_rr = 70 ns minimize reverse recovery loss and cross-conduction risk in high-frequency PWM inversion.	Use Scenario: Primary switching in IGBT-gated arc welding inverters requiring high peak current (≥200 A) and short pulse handling. IC Role / Device Role / Timing Role: Hard-switched power stage element rated for I_D(pulse) = ±260 A with robust SOA at elevated case temperatures. Use Value: Forward bias SOA supports 100 A at 40 V with 10 ms pulse width at T_C = 100°C, enabling stable arc initiation and regulation.

Industrial DC Motor Drives

Server PSU Primary Switches

Use Scenario: High-current H-bridge control for 24–48 V brushed DC motors in CNC feed axes and automated conveyors.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 60–80 A peak currents with repetitive avalanche tolerance.

Use Value: R_DS(on) ≤ 12.5 mΩ limits conduction loss to <0.8 W at 80 A, enabling air-cooled designs without forced ventilation.

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW server power supplies using LLC resonant topology.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch operating at 300–500 kHz with low C_iss and fast fall time.

Use Value: C_iss = 5900 pF and t_f = 12 ns reduce gate drive loss and improve zero-voltage switching margin across line/load variations.

Uninterruptible Power Supplies

Welding Inverter Stages

Use Scenario: Bidirectional DC-link switching in online UPS inverters delivering 3 kVA with battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch supporting 100% duty cycle operation with body diode conduction during dead-time.

Use Value: V_F(S-D) = 1.1 V and t_rr = 70 ns minimize reverse recovery loss and cross-conduction risk in high-frequency PWM inversion.

Use Scenario: Primary switching in IGBT-gated arc welding inverters requiring high peak current (≥200 A) and short pulse handling.

IC Role / Device Role / Timing Role: Hard-switched power stage element rated for I_D(pulse) = ±260 A with robust SOA at elevated case temperatures.

Use Value: Forward bias SOA supports 100 A at 40 V with 10 ms pulse width at T_C = 100°C, enabling stable arc initiation and regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH86N10L2	R_DS(on) = 10.5 mΩ @ 10 V, higher Q_G = 135 nC, TO-247 package	Higher peak current (86 A) but larger footprint; better for >1 kW designs with ample board space	Choose when lower R_DS(on) justifies TO-247 thermal/mechanical overhead and gate drive capability permits higher Q_G.
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V, no integrated gate protection, TO-220FP package	Lower on-resistance but requires external gate clamp; optimized for cost-sensitive consumer PSUs	Choose when gate protection is implemented externally and thermal budget allows tighter R_DS(on) target.

Compared with IXTH86N10L2 and STP80NF55-08, the 2SK3511-S19-AY offers balanced performance: integrated gate protection simplifies layout versus STP80NF55-08, while its TO-220AB footprint and moderate Q_G ease integration versus the larger IXTH86N10L2-ideal for mid-power industrial converters where reliability and board space are both critical.

Availability

2SK3511-S19-AY is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and welding inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SK3511-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The 2SK3511-S19-AY belongs to Renesas' legacy high-current power MOSFET product line, engineered for rugged, high-efficiency switching in industrial-grade power conversion where thermal stability and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK3511-S19-AY?

The 2SK3511-S19-AY has a maximum continuous drain current I_D(DC) of ±83 A at case temperature T_C = 25°C. This rating assumes adequate heatsinking; derating applies above 25°C per the datasheet's thermal resistance curve (R_th(ch-C) = 1.25°C/W). At T_C = 100°C, the usable I_D(DC) drops to approximately ±45 A.

Does the 2SK3511-S19-AY include integrated gate protection?

Yes, the 2SK3511-S19-AY integrates a gate-to-source Zener diode for ESD protection, rated for ±20 V gate-source voltage (V_GS). This internal protection reduces susceptibility to electrostatic discharge during handling and assembly but does not eliminate the need for external gate clamping in high-noise or high-dV/dt environments per the datasheet's design note.

What is the avalanche energy rating of the 2SK3511-S19-AY and how is it tested?

The 2SK3511-S19-AY is rated for single-pulse avalanche energy E_AS = 250 mJ, measured under conditions of V_DD = 35 V, R_G = 25 Ω, and V_GS transitioning from 20 V to 0 V, starting from T_ch = 25°C. This rating validates ruggedness against unclamped inductive switching events but is not intended for repetitive avalanche operation.

Can the 2SK3511-S19-AY be used in synchronous rectification applications?

Yes, the 2SK3511-S19-AY supports synchronous rectification due to its low R_DS(on) and fast body diode characteristics: V_F(S-D) = 1.1 V at I_F = 83 A and t_rr = 70 ns. However, its body diode is not optimized for ultra-fast recovery; for high-frequency (>300 kHz) SR, dedicated low-Q_rr MOSFETs may offer better efficiency.

What package type does the 2SK3511-S19-AY use and what are its thermal implications?

The 2SK3511-S19-AY uses the TO-220AB (MP-25) package with an isolated metal tab connected to the Drain. Its channel-to-case thermal resistance R_th(ch-C) is 1.25°C/W, enabling effective heat transfer to external heatsinks. Designers must ensure proper electrical isolation of the tab when mounting to grounded surfaces and apply thermal interface material for optimal conduction.

2SK3511-S19-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3511-S19-AY FAQ

1.How can I place an order for 2SK3511-S19-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3511-S19-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3511-S19-AY reliable?

The price and inventory of 2SK3511-S19-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3511-S19-AY is usually 5 days.

3.What payment methods are accepted for 2SK3511-S19-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3511-S19-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3511-S19-AY?

2SK3511-S19-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3511-S19-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3511-S19-AY?

For technical support, including 2SK3511-S19-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3511-S19-AY requirements.

6.How does Aetrix verify that 2SK3511-S19-AY is sourced from the original manufacturer or authorized distributors?

All 2SK3511-S19-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3511-S19-AY meets industry standards.

7.What is the process for return or replacement of 2SK3511-S19-AY?

All 2SK3511-S19-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3511-S19-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3511-S19-AY part is unused and in its original packaging.

Return procedure for 2SK3511-S19-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…