Toshiba Semiconductor and Storage 2SK3564(STA4,Q,M)

Overview

2SK3564(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 900 V drain-source breakdown voltage (V_(BR)DSS), 3.7 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 1.5 A, 2.6 S typical forward transfer admittance (|Y_fs|), and 408 mJ single-pulse avalanche energy - enabling robust operation in flyback and resonant converters up to 720 V DC bus.

For engineers reviewing the 2SK3564(STA4,Q,M) datasheet, 2SK3564(STA4,Q,M) pinout, 2SK3564(STA4,Q,M) application, or 2SK3564(STA4,Q,M) equivalent, key selection criteria include its 900 V V_DSS, low R_DS(ON) stability over temperature, gate charge profile (Q_g = 17 nC), and SC-67 package thermal resistance (R_th(ch-c) = 3.125 °C/W).

Technical Context

This device is an enhancement-mode π-MOSIV series MOSFET optimized for hard-switched and quasi-resonant SMPS topologies. Its 2.0–4.0 V gate threshold voltage (V_th) ensures reliable turn-on with standard 10 V gate drivers, while its 700 pF input capacitance (C_iss) and 15 pF reverse transfer capacitance (C_rss) support controlled switching transitions under high dV/dt conditions.

The integrated body diode exhibits 1.9 V forward voltage (V_DSF) at 3 A and 850 ns reverse recovery time (t_rr), making it suitable for freewheeling paths where moderate recovery performance is acceptable. Avalanche ruggedness is validated per JEITA SC-67 mechanical outline with 408 mJ single-pulse rating at T_ch = 25°C.

Key Specifications

Pinout & Package

Package: SC-67 (Toshiba 2-10U1B), JEITA-compliant 3-lead through-hole package with isolated tab (drain-connected). Weight: 1.7 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK90ZFP and IXTP50N10D2, the 2SK3564(STA4,Q,M) offers balanced trade-offs: superior avalanche ruggedness versus ST's part, and lower gate drive demand versus IXYS's higher-R_DS(ON) alternative - making it optimal for cost-sensitive, reliability-critical 50–150 kHz flyback and forward converters.

Availability

2SK3564(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial switching power supplies, AC-DC adapters for office equipment, and LED driver power stages requiring stable component supply across extended production lifecycles.

Supply support for 2SK3564(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The 2SK3564(STA4,Q,M) belongs to Toshiba's π-MOSIV family of high-voltage N-channel MOSFETs, engineered specifically for rugged, high-efficiency switching regulators in industrial and commercial power conversion systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3564(STA4,Q,M)?

The 2SK3564(STA4,Q,M) has a DC drain current rating of 3 A at T_c = 25°C. This limit is thermally constrained by its 40 W power dissipation capability and 3.125 °C/W channel-to-case thermal resistance. At elevated case temperatures, the allowable current must be derated linearly to maintain channel temperature ≤150°C - for example, to ~2.2 A at T_c = 100°C. The 9 A pulse rating applies only for short durations with strict duty cycle limits.

Does the 2SK3564(STA4,Q,M) have a built-in body diode, and what are its key parameters?

Yes, the 2SK3564(STA4,Q,M) integrates a parasitic body diode between drain and source. Its key parameters include a forward voltage (V_DSF) of −1.9 V at I_DR = 3 A and V_GS = 0 V, reverse recovery time (t_rr) of 850 ns, and reverse recovery charge (Q_rr) of 4.7 μC under specified test conditions. These values are measured with dI_DR/dt = 100 A/μs and define its freewheeling behavior in flyback and forward converters.

What is the gate threshold voltage range for the 2SK3564(STA4,Q,M), and how does it affect drive requirements?

The 2SK3564(STA4,Q,M) has a gate threshold voltage (V_th) range of 2.0 to 4.0 V at V_DS = 10 V and I_D = 1 mA. This ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excursions. Operation below 4.5 V V_GS results in significantly increased R_DS(ON); full enhancement requires ≥10 V, and the absolute maximum gate-source voltage is ±30 V.

Can the 2SK3564(STA4,Q,M) be used in avalanche mode, and what are the validated test conditions?

Yes, the 2SK3564(STA4,Q,M) is rated for single-pulse avalanche operation with E_AS = 408 mJ. Validation was performed under JEITA-defined conditions: V_DD = 90 V, inductor L = 83 mH, avalanche current I_AR = 3.0 A, and gate resistor R_G = 25 Ω. Repetitive avalanche is limited to 4.0 mJ per pulse due to thermal constraints. Safe operation requires adherence to the SOA curves and channel temperature limits in the official Toshiba datasheet.

What is the package type and mounting configuration of the 2SK3564(STA4,Q,M)?

The 2SK3564(STA4,Q,M) uses the SC-67 package (Toshiba designation 2-10U1B), a JEITA-standard 3-lead through-hole outline with an isolated metal tab electrically connected to the drain. The tab enables direct thermal coupling to a heatsink while maintaining electrical isolation from the PCB. Pin 1 is Gate, Pin 2 is Drain (tab), and Pin 3 is Source - confirmed by Toshiba's mechanical drawing and marking layout.