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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3570-ZK-E1-AZ

Name: 2SK3570-ZK-E1-AZ
Brand: Renesas
SKU: 2SK3570-ZK-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3570-ZK-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3570-ZK-E1-AZ.pdf

Description:: POWER FIELD-EFFECT TRANSISTOR

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Product details

Overview

2SK3570-ZK-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for low-voltage, high-current switching applications including synchronous rectification in DC/DC converters. It delivers R_DS(on)1 ≤ 12 mΩ at V_GS = 10 V and I_D = 24 A, supports 4.5 V gate drive, and features built-in gate protection diode with TO-263 (MP-25ZK) surface-mount package.

For engineers reviewing the 2SK3570-ZK-E1-AZ datasheet, 2SK3570-ZK-E1-AZ pinout, 2SK3570-ZK-E1-AZ application, or 2SK3570-ZK-E1-AZ equivalent, key selection criteria include low on-resistance at 4.5 V drive, fast switching (t_d(on) = 13 ns, t_f = 14 ns), gate charge Q_G = 23 nC, body diode reverse recovery time t_rr = 33 ns, and thermal resistance R_th(ch-C) = 4.31 °C/W - all critical for high-efficiency power stage design.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast turn-on/turn-off transitions. Its gate threshold voltage V_GS(off) ranges from 1.5 V to 2.5 V, enabling reliable enhancement-mode operation with standard logic-level gate drivers.

The integrated source-drain body diode exhibits VF(S-D) = 1.1 V at I_F = 48 A and t_rr = 33 ns under di/dt = 100 A/µs, supporting efficient freewheeling in synchronous buck topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum drain-source blocking voltage compatible with 12 V input rails and transient margin.
R_DS(on)1	12 mΩ max @ V_GS = 10 V, I_D = 24 A - Enables <1.2 W conduction loss at 24 A DC, reducing thermal load in compact converters.
R_DS(on)2	22 mΩ max @ V_GS = 4.5 V, I_D = 15 A - Ensures usable on-resistance with 5 V or single-cell Li-ion gate drive.
Q_G	23 nC typ - Low total gate charge minimizes driver power and enables >1 MHz switching with moderate gate resistance.
t_rr	33 ns - Fast body diode recovery reduces shoot-through risk and EMI in synchronous rectifier operation.
P_T2	29 W @ T_C = 25°C - High case-referenced power dissipation supports heatsink-mounted operation up to 48 A DC.
R_th(ch-C)	4.31 °C/W - Low channel-to-case thermal resistance allows effective heat transfer to PCB copper or external heatsink.

Pinout & Package

2SK3570-ZK-E1-AZ uses the TO-263 (MP-25ZK) surface-mount package with exposed drain pad for thermal and electrical performance. The 4-pin configuration integrates drain (pin 2 and exposed tab), source (pin 3), gate (pin 1), and auxiliary drain fin (pin 4) - all electrically connected to drain potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 0–20 V gate-source bias; protected by internal Zener diode.
Pin 2 + Exposed Pad	Drain	Main high-side current path; thermally coupled to PCB copper for enhanced power handling.
Pin 3	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.
Pin 4	Drain (Fin)	Secondary drain connection reinforcing thermal and current-carrying capacity; must be soldered to PCB pour.

Key Features

Feature	Design Value
4.5 V logic-level gate drive	Enables direct interfacing with 5 V microcontrollers or PWM controllers without level-shifting circuitry.
Built-in gate protection diode	Zener-clamped gate-source junction prevents ESD damage during handling and board assembly.
Low Q_GD/Q_G ratio	Q_GD = 7 nC of total Q_G = 23 nC - improves Miller immunity and hard-switching robustness.
Surface-mount TO-263 package	Eliminates through-hole mounting; supports automated reflow assembly and high-density PCB layouts.
Specified R_DS(on) over temperature	R_DS(on) increases only ~2× from 25°C to 125°C - ensures predictable conduction loss across operating range.

Applications

Server VRM Power Stage	Industrial DC/DC Converter
Use Scenario: High-efficiency 12 V input → 1.2 V/100 A output buck converter in enterprise server CPU voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with precise dead-time control. Use Value: R_DS(on)2 ≤ 22 mΩ at 4.5 V drive ensures <1.1 W conduction loss at 15 A peak, reducing thermal stress on multilayer PCBs.	Use Scenario: 24 V industrial bus supply stepping down to 5 V/20 A for PLC I/O modules with strict efficiency targets. IC Role / Device Role / Timing Role: High-current primary-side switch in non-isolated buck regulator with forced-air cooling. Use Value: P_T2 = 29 W and R_th(ch-C) = 4.31 °C/W allow sustained 48 A DC operation when mounted on 2 oz copper with thermal vias.
Telecom Point-of-Load Module	Automotive Infotainment Power Supply
Use Scenario: Compact 48 V → 3.3 V/15 A point-of-load converter in 1RU telecom shelf systems with limited airflow. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology. Use Value: t_rr = 33 ns and Q_rr = 25 nC minimize reverse recovery losses and associated EMI during zero-voltage switching transitions.	Use Scenario: 12 V battery-fed buck converter powering display backlight and audio amplifiers in automotive head units. IC Role / Device Role / Timing Role: Main switching FET in thermally constrained plastic enclosure with no heatsink. Use Value: TO-263 package's exposed drain pad enables direct thermal coupling to internal metal frame, maintaining T_ch < 130°C at 30 A continuous.

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-efficiency 12 V input → 1.2 V/100 A output buck converter in enterprise server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: R_DS(on)2 ≤ 22 mΩ at 4.5 V drive ensures <1.1 W conduction loss at 15 A peak, reducing thermal stress on multilayer PCBs.

Use Scenario: 24 V industrial bus supply stepping down to 5 V/20 A for PLC I/O modules with strict efficiency targets.

IC Role / Device Role / Timing Role: High-current primary-side switch in non-isolated buck regulator with forced-air cooling.

Use Value: P_T2 = 29 W and R_th(ch-C) = 4.31 °C/W allow sustained 48 A DC operation when mounted on 2 oz copper with thermal vias.

Telecom Point-of-Load Module

Automotive Infotainment Power Supply

Use Scenario: Compact 48 V → 3.3 V/15 A point-of-load converter in 1RU telecom shelf systems with limited airflow.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: t_rr = 33 ns and Q_rr = 25 nC minimize reverse recovery losses and associated EMI during zero-voltage switching transitions.

Use Scenario: 12 V battery-fed buck converter powering display backlight and audio amplifiers in automotive head units.

IC Role / Device Role / Timing Role: Main switching FET in thermally constrained plastic enclosure with no heatsink.

Use Value: TO-263 package's exposed drain pad enables direct thermal coupling to internal metal frame, maintaining T_ch < 130°C at 30 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 11.5 mΩ @ 10 V but requires 10 V min for full rating; Q_G = 27 nC; TO-252 package.	Lacks integrated gate protection diode; higher gate charge increases driver loss at >500 kHz.	Preferable where 10 V gate drive is available and PCB space permits DPAK footprint.
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V; Q_G = 42 nC; 40 V V_DSS; PowerFLAT 5x6 package.	Higher voltage rating and lower R_DS(on) but larger gate charge and no built-in gate Zener.	Better for 24 V systems needing lower conduction loss; unsuitable for 4.5 V drive or gate-sensitive environments.

Compared with IRF7470PBF and STL220N4F7AG, the 2SK3570-ZK-E1-AZ uniquely balances 4.5 V drive capability, integrated gate protection, and TO-263 thermal performance - making it optimal for space-constrained, logic-level-driven 20 V-class synchronous rectifiers where reliability and ease of use are prioritized over ultra-low R_DS(on).

Availability

2SK3570-ZK-E1-AZ is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom point-of-load modules, and automotive infotainment power supplies requiring stable component supply and long-term manufacturability.

Supply support for 2SK3570-ZK-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3570-ZK-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting high-efficiency, low-voltage switching applications - specifically engineered for synchronous rectification and DC/DC conversion where gate drive simplicity and thermal robustness are essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3570-ZK-E1-AZ at 25°C case temperature?

The 2SK3570-ZK-E1-AZ has a maximum continuous drain current I_D(DC) of ±48 A when the case temperature T_C is maintained at 25°C. This rating assumes proper heatsinking and is derived from its P_T2 = 29 W total power dissipation limit and R_DS(on)1 ≤ 12 mΩ conduction loss. At elevated case temperatures, derating applies per the datasheet's PT vs. TC curve.

Does the 2SK3570-ZK-E1-AZ include built-in electrostatic discharge (ESD) protection?

Yes, the 2SK3570-ZK-E1-AZ integrates a gate-source Zener diode for ESD protection, as confirmed in the "Features" section of its Renesas datasheet (D16256EJ2V0DS). This internal protection diode clamps gate voltage to ±20 V, safeguarding against handling-induced transients - though external gate resistors and layout best practices remain recommended for system-level robustness.

Can the 2SK3570-ZK-E1-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No - the 2SK3570-ZK-E1-AZ is specified for 4.5 V gate drive minimum to achieve guaranteed R_DS(on)2 ≤ 22 mΩ. While it may partially turn on at 3.3 V due to its V_GS(off) range (1.5–2.5 V), conduction losses become excessive and unpredictable. A dedicated gate driver or level shifter is required for reliable operation with 3.3 V logic.

What is the thermal resistance from channel to case (R_th(ch-C)) for the 2SK3570-ZK-E1-AZ?

The 2SK3570-ZK-E1-AZ has a specified channel-to-case thermal resistance R_th(ch-C) of 4.31 °C/W, measured under JEDEC conditions. This value reflects the device's ability to transfer heat from the silicon die to the TO-263 package's exposed drain pad, enabling effective thermal management when soldered to adequately sized PCB copper areas or external heatsinks.

Is the 2SK3570-ZK-E1-AZ suitable for automotive applications per AEC-Q101?

No - the 2SK3570-ZK-E1-AZ is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and industrial robots. It is not qualified to AEC-Q101 and lacks automotive-specific stress testing, lot traceability, or failure rate reporting. For automotive use, Renesas recommends verified AEC-Q101-compliant alternatives such as the RJK0305DPB series.

2SK3570-ZK-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3570-ZK-E1-AZ FAQ

1.How can I place an order for 2SK3570-ZK-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3570-ZK-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3570-ZK-E1-AZ reliable?

The price and inventory of 2SK3570-ZK-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3570-ZK-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3570-ZK-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3570-ZK-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3570-ZK-E1-AZ?

2SK3570-ZK-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3570-ZK-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3570-ZK-E1-AZ?

For technical support, including 2SK3570-ZK-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3570-ZK-E1-AZ requirements.

6.How does Aetrix verify that 2SK3570-ZK-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3570-ZK-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3570-ZK-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3570-ZK-E1-AZ?

All 2SK3570-ZK-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3570-ZK-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3570-ZK-E1-AZ part is unused and in its original packaging.

Return procedure for 2SK3570-ZK-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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