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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3573-AZ

Name: 2SK3573-AZ
Brand: Renesas
SKU: 2SK3573-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3573-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3573-AZ.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK3573-AZ from Renesas Electronics is an N-channel power MOSFET optimized for low-voltage, high-current synchronous rectification in DC/DC converters. It delivers R_DS(on)1 = 4.0 mΩ max at V_GS = 10 V and I_D = 42 A, supports 4.5 V gate drive, and features Q_G = 68 nC typical for fast switching. Its TO-220AB package enables robust thermal dissipation up to 105 W at T_C = 25°C.

For engineers reviewing the 2SK3573-AZ datasheet, 2SK3573-AZ pinout, 2SK3573-AZ application, or 2SK3573-AZ equivalent, key selection criteria include on-resistance at 4.5 V drive, pulsed current capability (±332 A), body diode reverse recovery performance (t_rr = 77 ns), and safe operating area limits under transient conditions.

Technical Context

The 2SK3573-AZ employs a planar vertical DMOS structure with optimized channel geometry to achieve low R_DS(on) while maintaining rugged avalanche capability. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) ensures reliable turn-on with standard logic-level drivers, and its C_iss/C_oss/C_rss values (4000/1550/570 pF) support stable operation in hard-switched topologies.

Thermal design is anchored by R_th(ch-C) = 1.19°C/W, enabling high-power density layouts when mounted on heatsinks. The integrated body diode exhibits VF(S-D) = 1.0 V at I_F = 83 A and Q_rr = 115 nC, making it suitable for bidirectional conduction paths in buck-derived converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage compatible with 12 V input bus systems and point-of-load converters.
R_DS(on)1	4.0 mΩ max at V_GS = 10 V, I_D = 42 A - Enables <1 W conduction loss at 40 A, critical for efficiency in high-current rails.
Q_G	68 nC typical at V_DD = 16 V - Determines gate driver power requirement and switching speed in PWM frequency range up to 500 kHz.
I_D(pulse)	±332 A - Supports short-duration overload conditions without thermal runaway, validated under PW ≤ 10 µs, duty ≤ 1%.
t_rr	77 ns at I_F = 83 A - Limits reverse recovery losses and EMI generation during freewheeling in synchronous rectifiers.
T_ch max	150°C - Defines maximum junction temperature for derating calculations; requires thermal interface design to maintain safe margin.

Pinout & Package

2SK3573-AZ uses the TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin). Mounting requires electrically insulating thermal interface and mechanical torque control per datasheet specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires low-impedance path to minimize ringing; sensitive to ESD (±20 V absolute max).
2 (Drain)	Main current sink	Connected to internal fin; electrically tied to metal tab - must be isolated from heatsink unless system ground reference permits.
3 (Source)	Reference node	Serves as return path for load current and gate drive loop; layout must minimize inductance to preserve switching fidelity.
4 (Fin/Drain)	Thermal & electrical drain path	Exposed metal surface for heatsinking; same potential as Drain pin - critical for thermal resistance R_th(ch-C) = 1.19°C/W.

Key Features

Feature	Design Value
4.5 V gate drive compatibility	Ensures full enhancement with standard microcontroller GPIO or low-voltage gate drivers without level-shifting circuitry.
Low R_DS(on) at 4.5 V	R_DS(on)2 = 6.0 mΩ max enables <2.5 W conduction loss at 40 A, supporting compact thermal solutions in space-constrained designs.
Fast switching with low Q_G	68 nC total gate charge reduces driver power consumption and allows higher PWM frequencies without excessive switching loss.
Rugged body diode	Q_rr = 115 nC and t_rr = 77 ns enable reliable freewheeling in synchronous buck converters without external Schottky supplementation.

Applications

Server VRM Output Stage	Industrial DC/DC Module
Use Scenario: High-efficiency 12 V to 1.2 V conversion delivering up to 120 A to CPU cores. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in buck converter low-side position. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, improving full-load efficiency from 89% to 93% at 100 A.	Use Scenario: 24 V input to 5 V/20 A isolated DC/DC supply for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side high-side switch in forward or active-clamp topology. Use Value: Withstands repetitive 332 A pulse currents during startup surges and maintains SOA integrity under 100 µs transients.
Telecom Base Station PSU	Automotive ADAS Power Supply
Use Scenario: 48 V to 12 V intermediate bus converter in macrocell radio units. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase interleaved buck stage. Use Value: 4.0 mΩ R_DS(on) minimizes phase current imbalance and thermal gradient across parallel devices.	Use Scenario: 12 V to 3.3 V/5 A power rail for radar sensor SoC in parking assist systems. IC Role / Device Role / Timing Role: Secondary-side switch in flyback or buck converter with tight thermal envelope. Use Value: TO-220AB package provides 105 W power dissipation at case temperature ≤ 75°C, eliminating need for forced air cooling.

Server VRM Output Stage

Industrial DC/DC Module

Use Scenario: High-efficiency 12 V to 1.2 V conversion delivering up to 120 A to CPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in buck converter low-side position.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, improving full-load efficiency from 89% to 93% at 100 A.

Use Scenario: 24 V input to 5 V/20 A isolated DC/DC supply for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch in forward or active-clamp topology.

Use Value: Withstands repetitive 332 A pulse currents during startup surges and maintains SOA integrity under 100 µs transients.

Telecom Base Station PSU

Automotive ADAS Power Supply

Use Scenario: 48 V to 12 V intermediate bus converter in macrocell radio units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase interleaved buck stage.

Use Value: 4.0 mΩ R_DS(on) minimizes phase current imbalance and thermal gradient across parallel devices.

Use Scenario: 12 V to 3.3 V/5 A power rail for radar sensor SoC in parking assist systems.

IC Role / Device Role / Timing Role: Secondary-side switch in flyback or buck converter with tight thermal envelope.

Use Value: TO-220AB package provides 105 W power dissipation at case temperature ≤ 75°C, eliminating need for forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.0 mΩ @ V_GS = 10 V but requires 10 V minimum gate drive; Q_G = 131 nC - 93% higher than 2SK3573-AZ.	Less suitable for 4.5 V logic-level drive; higher gate charge increases driver complexity and switching loss at >200 kHz.	Select only if gate drive voltage ≥ 10 V and lower cost outweighs efficiency penalty.
STP40NF20	V_DSS = 200 V, R_DS(on) = 50 mΩ - significantly higher on-resistance and voltage rating mismatch for 20 V systems.	Over-specified for low-voltage DC/DC; larger die size increases parasitic capacitance and slows switching.	Avoid for 20 V applications due to unnecessary voltage overhead and degraded efficiency vs. 2SK3573-AZ.

Compared with IRF1404PbF and STP40NF20, the 2SK3573-AZ uniquely balances 4.5 V drive capability, ultra-low R_DS(on), and low Q_G for high-frequency, high-current synchronous rectification - making it optimal for compact, thermally constrained 12–24 V DC/DC stages where gate drive headroom and efficiency are co-critical.

Availability

2SK3573-AZ is available at Aetrix Electronics and suitable for server VRM output stages, industrial DC/DC modules, telecom base station PSUs, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for 2SK3573-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3573-AZ belongs to Renesas' legacy power MOSFET product line designed specifically for high-efficiency, low-voltage DC/DC conversion in computing, communications, and industrial equipment.

FAQ

What is the maximum continuous drain current for the 2SK3573-AZ at 25°C case temperature?

The 2SK3573-AZ supports I_D(DC) = ±83 A at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and derating per the PT2 vs. TC curve - actual usable current decreases linearly above 25°C case temperature, reaching zero at 175°C.

Does the 2SK3573-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3573-AZ integrates a monolithic body diode with VF(S-D) = 1.0 V at I_F = 83 A and reverse recovery characteristics of t_rr = 77 ns and Q_rr = 115 nC. These values are measured under standardized conditions (I_F = 83 A, di/dt = 100 A/µs, V_GS = 0 V) and confirm suitability for synchronous rectification without external diode supplementation.

Can the 2SK3573-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No - the 2SK3573-AZ requires minimum 4.5 V gate drive for guaranteed R_DS(on) performance, and its V_GS(off) range (1.5–2.5 V) means 3.3 V may result in partial enhancement and excessive conduction loss. A dedicated gate driver or level shifter is required for reliable operation with 3.3 V logic.

What is the thermal resistance from channel to case (R_th(ch-C)) for the 2SK3573-AZ?

The 2SK3573-AZ has R_th(ch-C) = 1.19°C/W, as confirmed in the Transient Thermal Resistance graph (page 4 of D16259EJ2V0DS). This value applies to the TO-220AB package with proper mounting pressure and thermal interface material, enabling precise junction temperature estimation under steady-state and pulsed loads.

Is the 2SK3573-AZ compliant with RoHS and lead-free assembly requirements?

Yes - the 2SK3573-AZ is RoHS-compliant and qualified for lead-free reflow soldering per J-STD-020. Its packaging and processing meet EU Directive 2011/65/EU requirements, and Renesas confirms environmental compliance through material declarations and test reports available upon request via their official inquiry portal.

2SK3573-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3573-AZ FAQ

1.How can I place an order for 2SK3573-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3573-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3573-AZ reliable?

The price and inventory of 2SK3573-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3573-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3573-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3573-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3573-AZ?

2SK3573-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3573-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3573-AZ?

For technical support, including 2SK3573-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3573-AZ requirements.

6.How does Aetrix verify that 2SK3573-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3573-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3573-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3573-AZ?

All 2SK3573-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3573-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3573-AZ part is unused and in its original packaging.

Return procedure for 2SK3573-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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