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Renesas 2SK3573-ZK-E1-AZ
- Part No.:
- 2SK3573-ZK-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3573-ZK-E1-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
2SK3573-ZK-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for low-voltage, high-current synchronous rectification in DC/DC converters. It delivers RDS(on)1 = 4.0 mΩ max at VGS = 10 V and ID = 42 A, supports 4.5 V gate drive, and features QG = 68 nC typical for fast switching. Its TO-263 (D²PAK) surface-mount package enables high-density power stage layouts.
For engineers reviewing the 2SK3573-ZK-E1-AZ datasheet, 2SK3573-ZK-E1-AZ pinout, 2SK3573-ZK-E1-AZ application, or 2SK3573-ZK-E1-AZ equivalent, key selection criteria include its low on-resistance at 4.5 V drive, body diode reverse recovery performance (trr = 77 ns), thermal resistance (Rth(ch-C) = 1.19 °C/W), and safe operating area under pulsed conditions up to 332 A.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (VGS(off) = 1.5–2.5 V) ensures reliable turn-on with standard logic-level drivers, while the low Ciss (4000 pF) and Crss (570 pF) support efficient high-frequency operation in buck and multiphase topologies.
The integrated body diode exhibits VF(S-D) = 1.0 V at IF = 83 A and Qrr = 115 nC, enabling robust synchronous rectification without external Schottky diodes. Thermal design is supported by a channel-to-case thermal resistance of 1.19 °C/W and a maximum channel temperature rating of 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage; suitable for ≤12 V input DC/DC stages. |
| RDS(on)1 | 4.0 mΩ max at VGS = 10 V, ID = 42 A - Enables <1 W conduction loss at 40 A, critical for high-efficiency POL converters. |
| QG | 68 nC typical at VDD = 16 V - Determines gate driver power requirement and switching speed in hard-switched applications. |
| trr | 77 ns at IF = 83 A, di/dt = 100 A/µs - Limits reverse recovery energy loss and EMI during freewheeling transitions. |
| ID(pulse) | ±332 A (PW ≤ 10 µs, duty ≤ 1%) - Supports short-circuit withstand and peak load handling in server VRMs. |
| Rth(ch-C) | 1.19 °C/W - Defines thermal bottleneck between silicon junction and heatsink interface in TO-263 mounting. |
| VGS(th) | 1.5–2.5 V - Ensures full enhancement with 3.3 V or 5 V gate drivers; avoids partial turn-on in noise-prone environments. |
Pinout & Package
2SK3573-ZK-E1-AZ uses the TO-263 (MP-25ZK) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 10.0 ± 0.2 mm × 15.25 ± 0.5 mm × 4.45 ± 0.2 mm and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires low-inductance layout due to 68 nC total charge and fast dV/dt capability. |
| 2 (Drain) | Main current path (high-side connection) | Internally connected to large copper tab; must be soldered to PCB thermal pad for Rth(ch-C) = 1.19 °C/W performance. |
| 3 (Source) | Reference node for gate drive and current sensing | Serves as return path for load current and gate driver ground; layout symmetry minimizes shoot-through risk in half-bridge configurations. |
| 4 (Fin / Drain Tab) | Thermal and electrical drain extension | Exposed metal pad on underside; primary heat transfer path to PCB copper; electrically tied to Pin 2 (Drain). |
Key Features
| Feature | Design Value |
|---|---|
| 4.5 V gate drive compatibility | Guarantees full enhancement with common logic-level controllers, eliminating need for level-shifting or bootstrap circuits in low-input systems. |
| Low RDS(on)2 = 6.0 mΩ max at VGS = 4.5 V | Reduces conduction loss by >30% vs. competing 20 V MOSFETs at 3.3 V–5 V drive, improving light-load efficiency in USB-PD adapters. |
| Fast switching with td(on)/tr = 23 ns each | Enables operation above 1 MHz in compact DC/DC modules while maintaining <5% dead-time penalty in synchronous rectifiers. |
| Integrated body diode with Qrr = 115 nC | Permits zero-voltage switching (ZVS) assist in LLC resonant converters and reduces snubber losses in flyback designs. |
| TO-263 surface-mount construction | Supports automated assembly and high-power density layouts; exposed drain pad allows direct thermal coupling to inner-layer copper planes. |
Applications
| Server Point-of-Load Converter | USB-C Power Delivery Adapter |
|---|---|
Use Scenario: High-current 3.3 V/5 V/12 V regulation in AI accelerator cards requiring >100 A per rail. IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter output stage, driven by dedicated gate controller. Use Value: 4.0 mΩ RDS(on) limits conduction loss to <6.7 W at 40 A, enabling >95% efficiency at full load without forced air cooling. | Use Scenario: Secondary-side synchronous rectification in 65 W–100 W GaN-based USB-C PD chargers. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode in forward topology, controlled by QR flyback controller. Use Value: 77 ns trr and 1.0 V VF(S-D) reduce diode conduction and recovery losses by 42% versus 40 V Schottky, improving average efficiency by 1.8% across 10–100% load. |
| Industrial PLC I/O Module | Automotive Body Control Module (BCM) |
Use Scenario: 24 V DC input power distribution with overcurrent protection and hot-swap capability. IC Role / Device Role / Timing Role: High-side power switch controlling 12 V auxiliary rails for sensor interfaces and CAN transceivers. Use Value: ±20 V VGSS rating and 150 °C Tch allow operation in unregulated industrial environments with transient spikes up to ±15 V. | Use Scenario: Load switching for interior lighting, window motors, and HVAC actuators in 12 V battery systems. IC Role / Device Role / Timing Role: Low-side driver for brushed DC motors and LED strings, interfaced with LIN or local microcontroller. Use Value: 4.5 V drive compatibility ensures reliable turn-on with automotive-grade 3.3 V MCUs; 332 A pulse rating handles motor stall currents without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242PBF | RDS(on) = 3.2 mΩ @ 4.5 V, but VDSS = 30 V and QG = 10.5 nC - lower gate charge but higher voltage rating increases cost and capacitance. | Better suited for 24 V input systems; less optimal for 12 V/20 V designs where 2SK3573-ZK-E1-AZ's tighter VDSS margin improves reliability. | Select when 30 V blocking is required and gate drive strength is limited; avoid if minimizing Ciss and layout size is critical. |
| SiR872DP-T1-GE3 | RDS(on) = 3.0 mΩ @ 4.5 V, VDSS = 25 V, QG = 42 nC - lower QG enables faster switching but higher VDSS adds ~15% die area. | Preferred for >500 kHz switching in telecom PSUs; less ideal for cost-sensitive consumer adapters where 2SK3573-ZK-E1-AZ's mature process offers better $/A performance. | Choose for ultra-high-frequency designs needing <30 ns td(off); otherwise, 2SK3573-ZK-E1-AZ provides superior thermal robustness at lower gate drive complexity. |
Compared with IRLHS6242PBF and SiR872DP-T1-GE3, the 2SK3573-ZK-E1-AZ offers the best balance of 4.5 V drive assurance, 20 V VDSS headroom for 12 V systems, and proven thermal performance in TO-263 - making it optimal for space-constrained, thermally demanding DC/DC applications where gate driver simplicity and long-term supply stability are priorities.
Availability
2SK3573-ZK-E1-AZ is available at Aetrix Electronics and suitable for server point-of-load converters, USB-C power delivery adapters, industrial PLC I/O modules, and automotive body control modules requiring stable component supply and long-lifecycle support.
Supply support for 2SK3573-ZK-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and embedded markets.
The 2SK3573 series belongs to Renesas' legacy high-current logic-level power MOSFET product line, engineered specifically for synchronous rectification and high-efficiency DC/DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for the 2SK3573-ZK-E1-AZ at 25°C case temperature?
The 2SK3573-ZK-E1-AZ has a maximum continuous drain current (ID(DC)) rating of ±83 A at TC = 25°C. This rating assumes proper heatsinking via the TO-263 drain tab and is validated under steady-state thermal conditions. At elevated case temperatures, derating applies per the datasheet's PT vs. TC curve - for example, at 100°C case temperature, the usable ID(DC) drops to approximately 45 A. Always verify thermal design using Rth(ch-C) = 1.19 °C/W and actual board-level thermal resistance.
Does the 2SK3573-ZK-E1-AZ support gate drive voltages below 5 V, and what is its guaranteed RDS(on) at 4.5 V?
Yes, the 2SK3573-ZK-E1-AZ is fully characterized for 4.5 V gate drive. Its RDS(on)2 is guaranteed at 6.0 mΩ maximum when VGS = 4.5 V and ID = 42 A. This specification ensures robust enhancement with standard 3.3 V or 5 V logic-level drivers, eliminating the need for gate boosters in low-input-voltage DC/DC converters. The gate threshold voltage range (1.5–2.5 V) further guarantees turn-on margin even under worst-case VGS tolerance and temperature drift.
What is the reverse recovery charge (Qrr) of the body diode in the 2SK3573-ZK-E1-AZ, and why does it matter in synchronous rectifier designs?
The body diode of the 2SK3573-ZK-E1-AZ has a reverse recovery charge (Qrr) of 115 nC under test conditions of IF = 83 A and di/dt = 100 A/µs. In synchronous rectifier applications, Qrr directly contributes to switching loss and EMI during the freewheeling-to-conduction transition. A lower Qrr reduces voltage overshoot and ringing, allowing tighter dead-time control and higher efficiency - especially critical in high-frequency buck converters where the 2SK3573-ZK-E1-AZ is commonly deployed.
Can the 2SK3573-ZK-E1-AZ be used in parallel configurations, and what layout considerations are essential?
Yes, the 2SK3573-ZK-E1-AZ can be paralleled to increase current capacity, but success depends on matched gate drive impedance and symmetrical source inductance. Each device must have identical gate resistor values and localized gate loop area to prevent dynamic current imbalance. Critical layout practices include using Kelvin source connections, equal-length gate traces with ground-plane return paths, and independent gate driver outputs. Thermal coupling via shared heatsink or copper pour also helps maintain uniform channel temperature and positive temperature coefficient behavior during sharing.
Is the 2SK3573-ZK-E1-AZ RoHS compliant, and what is its quality grade per Renesas documentation?
Yes, the 2SK3573-ZK-E1-AZ is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas' environmental compliance documentation. Its quality grade is "Standard", meaning it is qualified for applications including computers, office equipment, communications gear, and industrial robots - but not for automotive safety-critical, medical life-support, or aerospace systems unless explicitly requalified. No additional "Specific" or "High Quality" markings appear in the official datasheet D16259EJ2V0DS, confirming Standard-grade status.
2SK3573-ZK-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3573-ZK-E1-AZ FAQ
1.How can I place an order for 2SK3573-ZK-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3573-ZK-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3573-ZK-E1-AZ reliable?
The price and inventory of 2SK3573-ZK-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3573-ZK-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3573-ZK-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3573-ZK-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3573-ZK-E1-AZ?
2SK3573-ZK-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3573-ZK-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3573-ZK-E1-AZ?
For technical support, including 2SK3573-ZK-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3573-ZK-E1-AZ requirements.
6.How does Aetrix verify that 2SK3573-ZK-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3573-ZK-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3573-ZK-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3573-ZK-E1-AZ?
All 2SK3573-ZK-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3573-ZK-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3573-ZK-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3573-ZK-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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