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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3635-Z-E1-AZ

Name: 2SK3635-Z-E1-AZ
Brand: Renesas
SKU: 2SK3635-Z-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3635-Z-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SK3635-Z-E1-AZ.pdf

Description:: MOSFET N-CH 200V 8A TO252

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Product details

Overview

2SK3635-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage DC/DC converter switching applications, featuring V_DSS = 200 V, R_DS(on) ≤ 0.43 Ω (V_GS = 10 V, I_D = 4.0 A), and built-in gate protection diode in TO-252 (MP-3Z) package.

For engineers reviewing the 2SK3635-Z-E1-AZ datasheet, 2SK3635-Z-E1-AZ pinout, 2SK3635-Z-E1-AZ application, or 2SK3635-Z-E1-AZ equivalent, this device serves as a robust, avalanche-rated switching element in industrial power supplies, motor drive half-bridges, and offline SMPS where low conduction loss and fast turn-off (t_f = 6 ns) are critical.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage blocking and low on-resistance trade-off. Its gate threshold voltage (V_GS(off) = 2.5–4.5 V) ensures reliable enhancement-mode operation with TTL/CMOS-compatible drive, while the integrated gate protection diode mitigates ESD susceptibility during handling and PCB assembly.

The device supports repetitive avalanche energy (E_AR = 2.4 mJ) under controlled conditions (T_ch ≤ 125°C, V_DD = 100 V), enabling robustness against inductive switching transients in flyback and forward converters without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Supports primary-side switching in 110/220 VAC offline converters with margin for surge and ringing.
R_DS(on) max	0.43 Ω @ V_GS = 10 V, I_D = 4 A - Enables <1.7 W conduction loss at 4 A, reducing heatsink requirements.
C_iss	390 pF typ - Low input capacitance minimizes gate drive power and improves high-frequency switching efficiency.
t_f	6 ns - Fast fall time reduces switching transition losses in hard-switched topologies above 100 kHz.
I_D(DC)	±8.0 A @ T_C = 25°C - Sustains continuous load current in compact TO-252 footprint with adequate thermal derating.
E_AS	6.4 mJ single-pulse - Withstands unclamped inductive energy spikes up to 100 V × 8 A × 8 μs without failure.
V_GSS	±30 V - Allows gate drive with ±15 V bias for enhanced noise immunity and safe turn-on margin.

Pinout & Package

2SK3635-Z-E1-AZ is housed in a surface-mount TO-252 (MP-3Z) package with exposed drain pad for thermal performance. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Drain (connected to fin), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; requires <12 nC total gate charge for full enhancement; protected by internal Zener diode.
2 (Drain)	High-side power terminal	Connected to main power rail (e.g., DC bus); electrically tied to metal fin for low-inductance heat path to PCB copper.
3 (Source)	Reference and return path	Serves as local ground reference for gate drive; body diode anode enables synchronous rectification or freewheeling paths.

Key Features

Feature	Design Value
Avalanche-rated operation	Single-pulse E_AS = 6.4 mJ and repetitive E_AR = 2.4 mJ enable reliable unclamped inductive switching without external clamping circuits.
Low C_iss/C_oss ratio	C_iss = 390 pF, C_oss = 95 pF - High C_iss/C_oss ratio improves voltage-dependent gate drive linearity and reduces Miller-induced shoot-through risk.
Built-in gate protection diode	Integrated Zener between gate and source - Provides ±30 V transient overvoltage clamping, reducing need for external TVS in gate drive loop.
Fast switching transitions	t_d(off) = 19 ns, t_f = 6 ns - Minimizes dead-time losses in half-bridge configurations and supports >500 kHz PWM frequencies.
Body diode with low Q_rr	Q_rr = 360 nC, t_rr = 110 ns - Reduces reverse recovery losses in non-synchronous rectifier applications versus standard power MOSFETs.

Applications

Industrial DC/DC Converters	Motor Drive Half-Bridges
Use Scenario: Step-down conversion from 200–400 VDC bus to 12–24 VDC for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched buck or forward topology operating at 100–300 kHz. Use Value: 0.43 Ω R_DS(on) limits conduction loss to <1.7 W at 4 A, while 6 ns fall time reduces transition loss below 0.3 W at 200 kHz.	Use Scenario: Upper-leg switching in 24–48 V BLDC motor inverters for HVAC blowers and industrial fans. IC Role / Device Role / Timing Role: N-channel high-side switch driven via bootstrap gate driver; handles 8 A peak phase current. Use Value: Avalanche rating absorbs inductive kickback during commutation; 200 V V_DSS provides margin over 48 V bus + 100 V overshoot.
Offline AC/DC Adapters	LED Driver Power Stages
Use Scenario: Primary switch in 30–60 W flyback adapters for office equipment and medical monitors (Standard-grade use). IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback with 65 kHz operation. Use Value: 6.4 mJ single-pulse avalanche energy withstands worst-case no-load overvoltage events without snubber redesign.	Use Scenario: Constant-current buck controller switch in outdoor LED streetlight drivers (100–200 W range). IC Role / Device Role / Timing Role: High-efficiency PWM-controlled current regulator with 100 kHz switching and thermal foldback. Use Value: TO-252 package enables direct copper pour heatsinking on FR4; 1.0 W P_T2 at T_A = 25°C supports natural convection cooling.

Industrial DC/DC Converters

Motor Drive Half-Bridges

Use Scenario: Step-down conversion from 200–400 VDC bus to 12–24 VDC for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched buck or forward topology operating at 100–300 kHz.

Use Value: 0.43 Ω R_DS(on) limits conduction loss to <1.7 W at 4 A, while 6 ns fall time reduces transition loss below 0.3 W at 200 kHz.

Use Scenario: Upper-leg switching in 24–48 V BLDC motor inverters for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: N-channel high-side switch driven via bootstrap gate driver; handles 8 A peak phase current.

Use Value: Avalanche rating absorbs inductive kickback during commutation; 200 V V_DSS provides margin over 48 V bus + 100 V overshoot.

Offline AC/DC Adapters

LED Driver Power Stages

Use Scenario: Primary switch in 30–60 W flyback adapters for office equipment and medical monitors (Standard-grade use).

IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback with 65 kHz operation.

Use Value: 6.4 mJ single-pulse avalanche energy withstands worst-case no-load overvoltage events without snubber redesign.

Use Scenario: Constant-current buck controller switch in outdoor LED streetlight drivers (100–200 W range).

IC Role / Device Role / Timing Role: High-efficiency PWM-controlled current regulator with 100 kHz switching and thermal foldback.

Use Value: TO-252 package enables direct copper pour heatsinking on FR4; 1.0 W P_T2 at T_A = 25°C supports natural convection cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	V_DSS = 200 V, R_DS(on) = 0.22 Ω (V_GS = 10 V), TO-220 package, no built-in gate Zener	Higher current capability but larger through-hole footprint; lacks integrated gate protection	Preferred when higher I_D (20 A) and lower R_DS(on) are needed, and board space allows TO-220 mounting.
IRF640NPbF	V_DSS = 200 V, R_DS(on) = 0.18 Ω, TO-220, no avalanche rating specified, C_iss = 660 pF	Lower R_DS(on) but higher input capacitance and no documented avalanche capability	Selected for cost-sensitive linear-regulator bypass or low-frequency switching where avalanche robustness is not required.

Compared with STP20NM20 and IRF640NPbF, the 2SK3635-Z-E1-AZ offers superior integration (gate Zener), surface-mount compatibility (TO-252), and verified avalanche ruggedness-making it optimal for compact, high-reliability DC/DC and motor control designs where layout space and transient immunity are constrained.

Availability

2SK3635-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, motor drive half-bridges, and offline AC/DC adapters requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SK3635-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3635-Z-E1-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in industrial power conversion systems where reliability under transient stress is mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK3635-Z-E1-AZ at 100°C case temperature?

The 2SK3635-Z-E1-AZ has a DC drain current rating of ±8.0 A at T_C = 25°C. At T_C = 100°C, derating applies per the datasheet's power dissipation curve: PT1 = 24 W at 25°C, dropping to ~12 W at 100°C. Using R_DS(on) = 0.43 Ω, the practical I_D(DC) at 100°C is approximately 5.3 A. This value must be validated with actual PCB thermal design for the TO-252 package.

Does the 2SK3635-Z-E1-AZ include a body diode, and what are its key parameters?

Yes, the 2SK3635-Z-E1-AZ integrates a parasitic body diode between source and drain. Its forward voltage is V_F(S-D) = 1.0 V at I_F = 8 A and V_GS = 0 V, with reverse recovery time t_rr = 110 ns and recovered charge Q_rr = 360 nC under specified test conditions (di/dt = 100 A/μs). These values confirm suitability for freewheeling in non-synchronous buck or flyback topologies.

Can the 2SK3635-Z-E1-AZ be used as a direct replacement for the 2SK3635 in TO-251 package?

No-the 2SK3635-Z-E1-AZ uses the TO-252 (MP-3Z) package, while the base 2SK3635 is in TO-251 (MP-3). Though electrically identical, the packages differ in lead pitch, thermal pad layout, and mounting footprint. PCB redesign is required to accommodate the wider TO-252 outline and different drain-fin geometry. Thermal performance also differs due to TO-252's larger copper exposure.

What gate drive voltage range is recommended for reliable operation of the 2SK3635-Z-E1-AZ?

The 2SK3635-Z-E1-AZ specifies V_GSS = ±30 V absolute maximum and V_GS(off) = 2.5–4.5 V. For full enhancement and minimal R_DS(on), a gate drive of +10 V is recommended. Gate drive can safely operate from +5 V (ensuring turn-on at I_D ≥ 100 mA) up to +15 V. Negative gate bias (down to –10 V) improves noise immunity during high-dv/dt switching but is not required for basic operation.

Is the 2SK3635-Z-E1-AZ compliant with RoHS and halogen-free standards?

Yes-the 2SK3635-Z-E1-AZ is manufactured by Renesas Electronics and conforms to the EU RoHS Directive (2011/65/EU) and JEDEC JS709A halogen-free requirements. The "-E1-AZ" suffix denotes lead-free (Pb-free), RoHS-compliant packaging with matte tin plating. Full compliance documentation, including material declarations and test reports, is available through Renesas' official product page for 2SK3635-Z-E1-AZ.

2SK3635-Z-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (MP-3Z)

2SK3635-Z-E1-AZ FAQ

1.How can I place an order for 2SK3635-Z-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3635-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3635-Z-E1-AZ reliable?

The price and inventory of 2SK3635-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3635-Z-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3635-Z-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3635-Z-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3635-Z-E1-AZ?

2SK3635-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3635-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3635-Z-E1-AZ?

For technical support, including 2SK3635-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3635-Z-E1-AZ requirements.

6.How does Aetrix verify that 2SK3635-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3635-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3635-Z-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3635-Z-E1-AZ?

All 2SK3635-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3635-Z-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3635-Z-E1-AZ part is unused and in its original packaging.

Return procedure for 2SK3635-Z-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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