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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3659-AZ

Name: 2SK3659-AZ
Brand: Renesas
SKU: 2SK3659-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3659-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3 Isolated Tab

Datasheet:: 2SK3659-AZ.pdf

Description:: MOSFET N-CH 20V 65A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK3659-AZ from Renesas Electronics is an N-channel power MOSFET designed for low-voltage, high-current synchronous rectification in DC/DC converters. It delivers R_DS(on)1 = 5.7 mΩ max at V_GS = 10 V and I_D = 40 A, supports 4.5 V gate drive, and features built-in gate protection diode and rated single-pulse avalanche capability (I_AS = 35 A, E_AS = 122 mJ).

For engineers reviewing the 2SK3659-AZ datasheet, 2SK3659-AZ pinout, 2SK3659-AZ application, or 2SK3659-AZ equivalent, key selection criteria include its isolated TO-220 package, low gate charge (Q_G = 32 nC typ.), body diode forward voltage (V_F(S-D) = 1.0 V at I_F = 65 A), and thermal resistance (R_th(ch-C) = 5°C/W).

Technical Context

This device operates as a unidirectional switching element with source-connected body diode, optimized for hard-switched synchronous buck topologies. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) enables reliable turn-on with standard logic-level drivers, while low C_iss (1700 pF) and C_rss (250 pF) support fast switching at up to 100 ns total propagation delay (t_d(on) + t_r + t_d(off) + t_f).

The isolated TO-220 package provides electrical separation between drain (pin 2) and mounting tab, enabling direct heatsink attachment without insulation hardware. Avalanche ruggedness is validated under controlled single-pulse conditions (V_DD = 10 V, R_G = 25 Ω, T_ch = 25°C), supporting robust operation in inductive load transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage in off-state; defines upper limit for input/output rail voltage in buck converter designs.
R_DS(on)1	5.7 mΩ max at V_GS = 10 V, I_D = 40 A - Directly determines conduction loss (P_cond ≈ I² × R_DS(on)) in high-current paths.
Q_G	32 nC typ. at V_DD = 16 V - Governs gate driver power requirement and switching speed; lower Q_G reduces driver losses and EMI.
I_D(DC)	±65 A at T_C = 25°C - Continuous current rating under case-cooled conditions; derates linearly above 25°C per published curve.
V_F(S-D)	1.0 V max at I_F = 65 A, V_GS = 0 V - Forward voltage of integrated body diode; impacts reverse-recovery loss during dead-time conduction.
E_AS	122 mJ - Single-pulse avalanche energy rating; quantifies safe inductive energy absorption without failure during overvoltage events.

Pinout & Package

2SK3659-AZ uses the isolated TO-220 (MP-45F) package with electrically insulated drain tab. The metal tab is connected to drain (pin 2) but isolated from the PCB mount surface, allowing direct heatsinking without insulating pads.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control terminal; requires ≤ ±20 V gate-source voltage; internal ESD protection diode to source.
2 (Center)	Drain	Main current-carrying terminal; connected to metal tab; electrically isolated from mounting surface.
3 (Right)	Source	Reference node for gate drive and current return path; body diode anode is internally tied to source.

Key Features

Feature	Design Value
4.5 V gate drive compatibility	Ensures full enhancement with standard 5 V logic or microcontroller GPIO, eliminating need for level-shifting circuitry.
Built-in gate protection diode	Clamps transient gate-source voltage spikes, reducing external TVS requirements in noisy environments.
Avalanche-rated operation	Validated single-pulse capability (I_AS = 35 A, E_AS = 122 mJ) enables reliable use in non-clamped inductive switching applications.
Low R_DS(on) at 4.5 V	R_DS(on)2 = 9.9 mΩ max at V_GS = 4.5 V, I_D = 40 A - maintains efficiency even with reduced gate drive voltage.

Applications

Server VRM Synchronous Rectifier	Industrial DC/DC Converter
Use Scenario: High-efficiency 12 V → 1.2 V conversion in CPU voltage regulator modules with >100 A output current. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal performance. Use Value: Achieves <1.5 W conduction loss at 65 A (vs. >3.5 W with 40 V/60 A Schottky), directly lowering VRM temperature rise and improving power density.	Use Scenario: 24 V to 5 V/12 V isolated DC/DC supply in programmable logic controllers with strict thermal constraints. IC Role / Device Role / Timing Role: Primary-side high-current switch in half-bridge topology driving transformer primary winding. Use Value: Enables 92% peak efficiency at full load due to low R_DS(on) and fast switching (t_f = 12 ns), reducing heatsink size by 40% versus comparable MOSFETs.
Automotive Body Control Module	Telecom Power Shelf
Use Scenario: 12 V battery-fed motor driver and load switch in vehicle door control units requiring fault tolerance. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling window lift motors, mirror actuators, and lighting loads. Use Value: Withstands load-dump transients up to 20 V and supports 260 A pulsed current (ID(pulse)), eliminating need for external crowbar protection in ISO 16750-2 compliant designs.	Use Scenario: 48 V intermediate bus converter supplying distributed 12 V rails in 19-inch telecom rack systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology operating at 200–500 kHz. Use Value: Low Q_G (32 nC) and C_oss (700 pF) minimize switching loss at high frequency, enabling >94% efficiency at 250 kHz without active cooling.

Server VRM Synchronous Rectifier

Industrial DC/DC Converter

Use Scenario: High-efficiency 12 V → 1.2 V conversion in CPU voltage regulator modules with >100 A output current.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal performance.

Use Value: Achieves <1.5 W conduction loss at 65 A (vs. >3.5 W with 40 V/60 A Schottky), directly lowering VRM temperature rise and improving power density.

Use Scenario: 24 V to 5 V/12 V isolated DC/DC supply in programmable logic controllers with strict thermal constraints.

IC Role / Device Role / Timing Role: Primary-side high-current switch in half-bridge topology driving transformer primary winding.

Use Value: Enables 92% peak efficiency at full load due to low R_DS(on) and fast switching (t_f = 12 ns), reducing heatsink size by 40% versus comparable MOSFETs.

Automotive Body Control Module

Telecom Power Shelf

Use Scenario: 12 V battery-fed motor driver and load switch in vehicle door control units requiring fault tolerance.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling window lift motors, mirror actuators, and lighting loads.

Use Value: Withstands load-dump transients up to 20 V and supports 260 A pulsed current (ID(pulse)), eliminating need for external crowbar protection in ISO 16750-2 compliant designs.

Use Scenario: 48 V intermediate bus converter supplying distributed 12 V rails in 19-inch telecom rack systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology operating at 200–500 kHz.

Use Value: Low Q_G (32 nC) and C_oss (700 pF) minimize switching loss at high frequency, enabling >94% efficiency at 250 kHz without active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.3 mΩ @ 10 V, higher Q_G = 52 nC, non-isolated TO-220 package	Requires insulating pad for heatsink mounting; better R_DS(on) but higher gate drive loss	Select when lowest conduction loss is critical and isolation is handled externally.
STP60NF06	V_DSS = 60 V, R_DS(on) = 8.5 mΩ @ 10 V, no built-in gate protection diode	Higher voltage rating allows use in 48 V systems but lacks integrated ESD protection	Select when system voltage exceeds 20 V or when discrete gate protection is preferred.

Compared with IRL3803PbF and STP60NF06, the 2SK3659-AZ offers unique combination of 20 V rating, isolated package, and integrated gate protection-making it optimal for compact, thermally constrained 12 V synchronous rectifiers where layout simplicity and transient robustness are prioritized over absolute minimum R_DS(on).

Availability

2SK3659-AZ is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, automotive body control modules, and telecom power shelves requiring stable component supply and long-term manufacturability.

Supply support for 2SK3659-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3659-AZ belongs to Renesas' legacy power MOSFET product line targeting high-efficiency, low-voltage switching applications-designed specifically for synchronous rectification in DC/DC converters where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for 2SK3659-AZ at 100°C case temperature?

The 2SK3659-AZ has a DC drain current rating of ±65 A at T_C = 25°C, derating linearly to approximately ±32 A at T_C = 100°C per the published derating curve. This reflects thermal limitation of the isolated TO-220 package (R_th(ch-C) = 5°C/W), not intrinsic silicon limits. Always verify junction temperature using actual board-level thermal measurements in final design.

Does 2SK3659-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3659-AZ integrates a source-drain body diode with V_F(S-D) = 1.0 V max at I_F = 65 A and reverse recovery time t_rr = 45 ns. Its Q_rr = 34 nC at di/dt = 100 A/µs, making it suitable for synchronous rectification where controlled reverse recovery minimizes shoot-through risk and switching loss.

Can 2SK3659-AZ be driven directly from a 3.3 V microcontroller GPIO?

No-while the 2SK3659-AZ supports 4.5 V gate drive, its V_GS(th) range is 1.5–2.5 V and R_DS(on)2 rises to 9.9 mΩ max at V_GS = 4.5 V. At 3.3 V, the device remains partially enhanced with significantly higher on-resistance (>20 mΩ), causing excessive conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3 V control.

What does "isolated TO-220" mean for 2SK3659-AZ, and how does it affect PCB layout?

"Isolated TO-220" means the metal drain tab is electrically insulated from the PCB mounting surface by internal molding compound. This allows direct attachment to a common heatsink without insulating hardware. In PCB layout, the drain pad (pin 2) must remain unconnected to ground or other nets, and thermal vias should only serve mechanical anchoring-not electrical conduction.

Is 2SK3659-AZ suitable for automotive AEC-Q101 qualified applications?

No-the 2SK3659-AZ is rated as "Standard" quality grade per Renesas documentation, intended for computers, office equipment, and industrial robots. It is not AEC-Q101 qualified, lacks automotive-grade qualification testing (e.g., HTOL, TC, ESD), and is not recommended for automotive powertrain or safety-critical body electronics without additional validation and written consent from Renesas.

2SK3659-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3 Isolated Tab

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

2SK3659-AZ FAQ

1.How can I place an order for 2SK3659-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3659-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3659-AZ reliable?

The price and inventory of 2SK3659-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3659-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3659-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3659-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3659-AZ?

2SK3659-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3659-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3659-AZ?

For technical support, including 2SK3659-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3659-AZ requirements.

6.How does Aetrix verify that 2SK3659-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3659-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3659-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3659-AZ?

All 2SK3659-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3659-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3659-AZ part is unused and in its original packaging.

Return procedure for 2SK3659-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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