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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3668-ZK-E1-AY

Name: 2SK3668-ZK-E1-AY
Brand: Renesas
SKU: 2SK3668-ZK-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3668-ZK-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3668-ZK-E1-AY.pdf

Description:: POWER FIELD-EFFECT TRANSISTOR

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Product details

Overview

2SK3668-ZK-E1-AY from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET in TO-263 (MP-25ZK) surface-mount package, rated for 400 V V_DSS, 10 A DC drain current, and 0.55 Ω max R_DS(on) at V_GS = 10 V. It delivers low gate charge (26 nC typ.), fast switching (t_d(off) = 44 ns), and robust avalanche capability (E_AS = 8 mJ), designed specifically for high-intensity discharge (HID) lamp ballast circuits.

For engineers reviewing the 2SK3668-ZK-E1-AY datasheet, 2SK3668-ZK-E1-AY pinout, 2SK3668-ZK-E1-AY application, or 2SK3668-ZK-E1-AY equivalent, this device is evaluated for high-voltage DC-DC conversion, electronic ballasts, and industrial switching where low conduction loss, controlled turn-off behavior, and thermal reliability under pulsed inductive loads are critical selection criteria.

Technical Context

The 2SK3668-ZK-E1-AY employs a vertical DMOS structure optimized for high-voltage blocking and low on-resistance trade-off. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) ensures stable turn-on with standard 10 V gate drive, while its C_iss = 1320 pF and C_rss = 13 pF support predictable Miller-effect-limited switching transitions.

Thermally, it features R_th(ch–C) = 1.25 °C/W and R_th(ch–A) = 83.3 °C/W, enabling high-power operation when mounted on a heatsink, and its single-pulse avalanche rating (I_AS = 10 A, E_AS = 8 mJ) provides design margin against inductive energy spikes in HID lamp ignition circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	400 V - Supports DC bus voltages up to 320 V in switching applications with safety margin.
R_DS(on) max	0.55 Ω at V_GS = 10 V, I_D = 5 A - Enables ≤2.75 W conduction loss at 5 A, reducing heatsink requirements.
Q_G typ	26 nC at V_DD = 320 V - Low gate drive power demand, compatible with standard MOSFET drivers.
t_d(off)	44 ns with R_G = 10 Ω - Enables >100 kHz switching in resonant HID ballasts without excessive switching loss.
E_AS	8 mJ - Withstands single inductive energy spikes up to 8 mJ during lamp ignition transients.
T_ch max	150 °C - Allows operation in sealed lamp housings with limited airflow and elevated ambient temperatures.
I_D(pulse)	±34 A (PW ≤ 10 µs, duty ≤ 1%) - Handles peak ignition currents in HID lamp starting circuits.

Pinout & Package

2SK3668-ZK-E1-AY is housed in a TO-263 (MP-25ZK) surface-mount package with exposed drain tab (Pin 4) for thermal and electrical connection. The package measures 15.25 mm × 10.0 mm × 4.45 mm and features gull-wing leads for reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; ±30 V absolute max rating prevents ESD-induced oxide damage.
2 (Drain)	High-side power output	Connected to HV DC bus (up to 400 V); electrically tied to metal tab (Pin 4) for low-inductance heat path.
3 (Source)	Power return / reference	Serves as common return for gate drive and load current; defines V_GS reference point.
4 (Fin/Drain)	Thermal & electrical drain node	Exposed copper tab soldered to PCB ground plane or heatsink; carries full drain current and dissipates >95% of heat.

Key Features

Feature	Design Value
Low R_DS(on) with high V_DSS	0.55 Ω @ 400 V enables efficient high-voltage switching without paralleling devices.
Optimized gate charge profile	Q_GD/Q_GS ratio of ~1.6 reduces Miller plateau duration and improves dV/dt immunity.
Integrated body diode	V_F(S–D) = 0.90 V @ 10 A supports freewheeling in half-bridge topologies without external diode.
Avalanche-rated operation	Specified single-pulse E_AS = 8 mJ allows reliable operation in unclamped inductive switching (e.g., lamp ignition).
Surface-mount thermal design	TO-263 package with exposed drain tab achieves R_th(ch–C) = 1.25 °C/W for direct PCB heatsinking.

Applications

HID Lamp Ballast	Industrial DC-DC Converter
Use Scenario: Driving high-intensity discharge lamps (e.g., automotive headlights, street lighting) requiring high-voltage ignition pulses and regulated AC arc current. IC Role / Device Role / Timing Role: High-side switch in half-bridge or flyback topology; handles 300–400 V DC bus and 10–30 kHz resonant switching. Use Value: Low Q_G and fast t_d(off) minimize switching loss during high-frequency lamp regulation; avalanche rating absorbs ignition energy spikes.	Use Scenario: Isolated DC-DC power supply for factory automation controllers, where input is 24–48 V DC and output must be 12 V/5 A with tight regulation. IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward converter; operates at fixed 200 kHz PWM frequency. Use Value: R_DS(on) ≤ 0.55 Ω limits conduction loss to <3 W at full load; TO-263 package enables compact layout with integrated thermal management.
Motor Drive Inverter Stage	UPS Output Stage
Use Scenario: Low-power BLDC motor drive for HVAC blowers or industrial pumps, operating from 310 V DC link derived from rectified AC. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; commutated via six-step or FOC control at ≤15 kHz. Use Value: Fast tr/tf (8 ns/4 ns) and low C_rss reduce shoot-through risk; body diode t_rr = 350 ns supports synchronous rectification in regenerative braking.	Use Scenario: Online UPS output H-bridge delivering clean 230 V AC from 380 V DC bus during mains failure. IC Role / Device Role / Timing Role: High-voltage bridge arm switch handling bidirectional 50 Hz sinusoidal current with PWM modulation. Use Value: 10 A DC rating and 34 A pulse capability sustain overload conditions; T_ch = 150 °C rating ensures reliability under sustained 40°C ambient + internal heating.

HID Lamp Ballast

Industrial DC-DC Converter

Use Scenario: Driving high-intensity discharge lamps (e.g., automotive headlights, street lighting) requiring high-voltage ignition pulses and regulated AC arc current.

IC Role / Device Role / Timing Role: High-side switch in half-bridge or flyback topology; handles 300–400 V DC bus and 10–30 kHz resonant switching.

Use Value: Low Q_G and fast t_d(off) minimize switching loss during high-frequency lamp regulation; avalanche rating absorbs ignition energy spikes.

Use Scenario: Isolated DC-DC power supply for factory automation controllers, where input is 24–48 V DC and output must be 12 V/5 A with tight regulation.

IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward converter; operates at fixed 200 kHz PWM frequency.

Use Value: R_DS(on) ≤ 0.55 Ω limits conduction loss to <3 W at full load; TO-263 package enables compact layout with integrated thermal management.

Motor Drive Inverter Stage

UPS Output Stage

Use Scenario: Low-power BLDC motor drive for HVAC blowers or industrial pumps, operating from 310 V DC link derived from rectified AC.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; commutated via six-step or FOC control at ≤15 kHz.

Use Value: Fast tr/tf (8 ns/4 ns) and low C_rss reduce shoot-through risk; body diode t_rr = 350 ns supports synchronous rectification in regenerative braking.

Use Scenario: Online UPS output H-bridge delivering clean 230 V AC from 380 V DC bus during mains failure.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch handling bidirectional 50 Hz sinusoidal current with PWM modulation.

Use Value: 10 A DC rating and 34 A pulse capability sustain overload conditions; T_ch = 150 °C rating ensures reliability under sustained 40°C ambient + internal heating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	600 V V_DSS, 3.8 Ω R_DS(on), TO-220FP package, no specified E_AS.	Higher voltage margin but higher conduction loss; lacks avalanche rating and surface-mount form factor.	Use only if 600 V rating is mandatory and board space permits through-hole mounting.
IXTP10N50D2	500 V V_DSS, 0.65 Ω R_DS(on), TO-220 package, E_AS = 12 mJ.	Higher avalanche energy but larger footprint and higher R_DS(on); not surface-mount.	Preferable for higher-energy transient environments where PCB area allows TO-220 heatsinking.

Compared with STP4NK60ZFP and IXTP10N50D2, the 2SK3668-ZK-E1-AY offers optimal balance of 400 V rating, low R_DS(on), surface-mount thermal performance, and documented avalanche capability-making it uniquely suited for space-constrained HID ballasts and industrial SMPS where reliability under repetitive inductive stress is required.

Availability

2SK3668-ZK-E1-AY is available at Aetrix Electronics and suitable for HID lamp ballasts, industrial DC-DC converters, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for 2SK3668-ZK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SK3668-ZK-E1-AY belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered for reliability in lighting and power conversion systems where ruggedness under repetitive overvoltage and inductive stress is essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3668-ZK-E1-AY at 25°C case temperature?

The 2SK3668-ZK-E1-AY has a maximum continuous drain current (I_D(DC)) rating of ±10 A at T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C case temperature per the datasheet's PT2 vs. TC curve. At 100°C case temperature, the usable DC current drops to approximately 5 A. Always verify thermal design using R_th(ch–C) = 1.25 °C/W and actual board-level heatsinking performance before finalizing layout for the 2SK3668-ZK-E1-AY.

Does the 2SK3668-ZK-E1-AY include an integrated body diode, and what are its key parameters?

Yes, the 2SK3668-ZK-E1-AY integrates a parasitic body diode between source and drain. Its forward voltage is V_F(S–D) = 0.90 V at I_F = 10 A and V_GS = 0 V, with reverse recovery time t_rr = 350 ns and Q_rr = 2.7 µC under specified test conditions. This diode supports freewheeling in half-bridge and flyback topologies but is not optimized for high-frequency synchronous rectification-designers should evaluate cross-conduction risks in hard-switched bridges. These values are measured and guaranteed for the 2SK3668-ZK-E1-AY.

Can the 2SK3668-ZK-E1-AY be driven directly by a 3.3 V microcontroller GPIO pin?

No, the 2SK3668-ZK-E1-AY cannot be reliably turned on using only a 3.3 V GPIO. Its gate threshold voltage V_GS(off) ranges from 2.5 V to 3.5 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) ≤ 0.55 Ω. At 3.3 V, the device remains in weak conduction (I_D < 1 mA), leading to excessive power dissipation and thermal runaway. A dedicated gate driver (e.g., TC4427 or similar) supplying ≥10 V is mandatory for normal operation of the 2SK3668-ZK-E1-AY.

What is the safe operating area (SOA) limitation for the 2SK3668-ZK-E1-AY at 100 µs pulse width?

At 100 µs pulse width, the 2SK3668-ZK-E1-AY SOA is limited by both R_DS(on) and power dissipation. For V_DS = 200 V, the maximum allowable I_D is approximately 4.5 A; at V_DS = 100 V, it rises to ~9 A. These boundaries are defined in the "Forward Bias Safe Operating Area" graph (Figure 1) of the D16547EJ2V0DS datasheet and assume T_C = 25°C with adequate heatsinking. Exceeding these points risks thermal runaway or bond-wire fusing-even for short pulses-so SOA compliance must be verified for each 2SK3668-ZK-E1-AY application.

Is the 2SK3668-ZK-E1-AY RoHS compliant and lead-free?

Yes, the 2SK3668-ZK-E1-AY is RoHS compliant and lead-free. Per Renesas documentation and packaging markings (E1 suffix), it conforms to EU Directive 2011/65/EU and uses matte tin plating on leads. The TO-263 (MP-25ZK) package is compatible with standard Pb-free reflow profiles (JEDEC J-STD-020). No exemptions apply, and material declarations confirm absence of Cd, Pb, Hg, Cr(VI), PBB, and PBDE. This compliance applies to all production lots of the 2SK3668-ZK-E1-AY shipped after April 2006.

2SK3668-ZK-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3668-ZK-E1-AY FAQ

1.How can I place an order for 2SK3668-ZK-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3668-ZK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3668-ZK-E1-AY reliable?

The price and inventory of 2SK3668-ZK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3668-ZK-E1-AY is usually 5 days.

3.What payment methods are accepted for 2SK3668-ZK-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3668-ZK-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3668-ZK-E1-AY?

2SK3668-ZK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3668-ZK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3668-ZK-E1-AY?

For technical support, including 2SK3668-ZK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3668-ZK-E1-AY requirements.

6.How does Aetrix verify that 2SK3668-ZK-E1-AY is sourced from the original manufacturer or authorized distributors?

All 2SK3668-ZK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3668-ZK-E1-AY meets industry standards.

7.What is the process for return or replacement of 2SK3668-ZK-E1-AY?

All 2SK3668-ZK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3668-ZK-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3668-ZK-E1-AY part is unused and in its original packaging.

Return procedure for 2SK3668-ZK-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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