Renesas 2SK3712(1)-AZ
- Part No.:
- 2SK3712(1)-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3712(1)-AZ.pdf
- Description:
- SMALL SIGNAL N-CHANNEL MOSFET
- Quantity:
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Inventory:1,169
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Product details
Overview
2SK3712(1)-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching in DC/DC converters, featuring VDSS = 250 V, RDS(on) ≤ 0.58 Ω at VGS = 10 V and ID = 4.5 A, built-in gate protection diode, and TO-251 (MP-3) package with drain-connected fin for enhanced thermal dissipation.
For engineers reviewing the 2SK3712(1)-AZ datasheet, 2SK3712(1)-AZ pinout, 2SK3712(1)-AZ application, or 2SK3712(1)-AZ equivalent, key selection criteria include avalanche ruggedness (EAS = 8.1 mJ), low Ciss (450 pF typ.), fast switching (td(on)/tr = 8 ns each), and body diode recovery performance (Qrr = 630 nC, trr = 150 ns).
Technical Context
This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, leveraging its 250 V blocking capability and 9.0 A DC drain current rating. Its gate threshold voltage (VGS(off) = 2.5–4.5 V) enables compatibility with standard 10 V gate drivers, while the integrated gate protection diode mitigates ESD risk during handling and assembly.
The 2SK3712(1)-AZ exhibits strong avalanche robustness (IAS = 9 A, EAS = 8.1 mJ under defined test conditions) and thermally stable RDS(on) behavior up to 150 °C channel temperature. Its low output capacitance (Coss = 100 pF) and reverse transfer capacitance (Crss = 40 pF) support efficient operation in high-frequency switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - supports primary-side switching in offline 200 VAC-derived DC/DC stages without derating. |
| RDS(on) | 0.58 Ω max - limits conduction loss to ≤23.5 W at 9 A DC, enabling compact heatsink design. |
| Ciss | 450 pF typ. - reduces gate drive power requirement and improves switching speed control. |
| QG | 14 nC - determines minimum gate driver peak current needed for <100 ns transition times. |
| EAS | 8.1 mJ - allows safe single-pulse inductive energy absorption without failure in flyback or LLC resonant circuits. |
| tr/tf | 8 ns / 6 ns - enables >1 MHz switching in optimized layouts with minimal overlap loss. |
| VF(S-D) | 1.5 V max - defines forward drop of intrinsic body diode during synchronous rectification or freewheeling. |
Pinout & Package
2SK3712(1)-AZ uses the TO-251 (MP-3) surface-mount package with exposed drain-fin for direct PCB thermal coupling. Pin 1 is Gate, Pin 2 is Drain (connected to metal fin), Pin 3 is Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires external series resistor to damp ringing and limit dV/dt-induced turn-on. |
| 2 (Drain) | Main current path output | Internally connected to metal fin - must be soldered to large copper pour for thermal management and EMI reduction. |
| 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate drive loop; layout must minimize inductance to prevent oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in gate protection diode | ESD immunity per HBM ≥2 kV - eliminates need for discrete gate Zener in basic handling environments. |
| Low Crss (40 pF) | Reduces Miller effect, enabling stable switching even with moderate gate resistance and high dV/dt across drain-source. |
| Avalanche-rated construction | Guaranteed single-pulse ruggedness (IAS = 9 A, EAS = 8.1 mJ) - simplifies snubber design in inductive load switching. |
| High channel temperature rating (150 °C) | Supports operation in sealed enclosures or high ambient environments without forced air cooling. |
| TO-251 drain-fin thermal path | Thermal resistance Rth(ch-C) = 3.125 °C/W - enables >10 W continuous dissipation with 2 oz copper and 20 cm² pad area. |
Applications
| DC/DC Converter Primary Switch | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 250 V input isolated flyback converter delivering 24 V/5 A to industrial PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with hard commutation and repetitive avalanche stress. Use Value: Low RDS(on) minimizes conduction loss; high VDSS and EAS ensure reliability during output short-circuit events. | Use Scenario: 48 V bus-powered 3-phase BLDC motor controller for automated warehouse conveyors. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, conducting up to 9 A DC with 10 μs dead-time constraints. Use Value: Fast tf (6 ns) and low QGD (7 nC) reduce cross-conduction risk and improve PWM fidelity at 20 kHz. |
| LED Driver High-Side Switch | Power Factor Correction Boost Stage |
Use Scenario: Constant-current LED string driver for outdoor signage powered from 200–240 VAC rectified bus. IC Role / Device Role / Timing Role: High-side switch controlling LED current via PWM dimming at 1–5 kHz. Use Value: Integrated gate protection diode prevents gate oxide damage during hot-plug or transient overvoltage events. | Use Scenario: 300 W active PFC boost converter stage in medical-grade AC/DC power supply. IC Role / Device Role / Timing Role: Main switching element handling 1.2 A RMS input current with 100 kHz switching frequency. Use Value: Low Ciss and Crss maintain efficiency above 96% while reducing EMI filter size and cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | VDSS = 500 V, RDS(on) = 0.22 Ω, TO-220FP package | Higher voltage margin but larger footprint and higher gate charge (QG = 45 nC) | Preferred where 500 V rating is required and board space permits through-hole mounting. |
| IXTP12N25P | VDSS = 250 V, RDS(on) = 0.32 Ω, TO-220 package, no built-in gate diode | Lower on-resistance but lacks integrated ESD protection and requires external gate clamp | Selected when maximum efficiency is critical and gate drive circuit includes discrete protection. |
Compared with STP20NM50FP and IXTP12N25P, the 2SK3712(1)-AZ offers optimal balance of voltage rating, thermal performance in surface-mount form factor, and integrated gate protection-making it especially suitable for space-constrained, high-reliability DC/DC converters where layout simplicity and ESD robustness are prioritized.
Availability
2SK3712(1)-AZ is available at Aetrix Electronics and suitable for industrial motor drives, LED lighting systems, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for 2SK3712(1)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The 2SK3712(1)-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion where reliability under repetitive stress and thermal stability are critical.
FAQ
What is the maximum continuous drain current rating for the 2SK3712(1)-AZ at 25°C case temperature?
The 2SK3712(1)-AZ has a maximum continuous drain current (ID(DC)) rating of ±9.0 A at TC = 25°C. This rating assumes proper PCB thermal design with the TO-251 drain-fin soldered to sufficient copper area. Derating is required above 25°C case temperature per the published derating curve, reaching zero at 125°C case temperature.
Does the 2SK3712(1)-AZ include an integrated body diode, and what are its key parameters?
Yes, the 2SK3712(1)-AZ includes an intrinsic body diode between source and drain. Its forward voltage is specified as VF(S-D) = 0.9–1.5 V at IF = 9 A and VGS = 0 V, with reverse recovery time trr = 150 ns and reverse recovery charge Qrr = 630 nC under di/dt = 100 A/μs. These values are critical for evaluating freewheeling losses in hard-switched topologies.
Can the 2SK3712(1)-AZ be used in avalanche mode, and what are the validated limits?
Yes, the 2SK3712(1)-AZ is rated for single-pulse avalanche operation with IAS = 9 A and EAS = 8.1 mJ under defined test conditions (VDD = 125 V, RG = 25 Ω, L = 100 μH, starting Tch = 25°C). Repetitive avalanche is also supported at IAR = 9 A and EAR = 8.1 mJ, provided peak channel temperature remains ≤150°C. Operation beyond these limits risks parametric shift or failure.
What is the gate-to-source voltage rating for the 2SK3712(1)-AZ, and why is it important?
The 2SK3712(1)-AZ has a gate-to-source voltage rating (VGSS) of ±30 V. Exceeding this rating-even briefly-can cause irreversible gate oxide breakdown. This specification mandates use of gate drive circuits that clamp or limit VGS within this range, especially in high-dV/dt environments or when using bootstrap configurations with insufficient negative voltage suppression.
How does the TO-251 package of the 2SK3712(1)-AZ impact thermal and electrical performance compared to TO-252?
The TO-251 (MP-3) package of the 2SK3712(1)-AZ features a vertical drain-fin structure that provides lower thermal resistance from channel to case (Rth(ch-C) = 3.125 °C/W) than TO-252, improving power dissipation in constrained spaces. Electrically, its shorter internal leads reduce parasitic inductance, enhancing switching consistency and reducing voltage overshoot during turn-off-critical for high-speed, high-voltage operation.
2SK3712(1)-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3712(1)-AZ FAQ
1.How can I place an order for 2SK3712(1)-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3712(1)-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3712(1)-AZ reliable?
The price and inventory of 2SK3712(1)-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3712(1)-AZ is usually 5 days.
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6.How does Aetrix verify that 2SK3712(1)-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3712(1)-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3712(1)-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3712(1)-AZ?
All 2SK3712(1)-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3712(1)-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3712(1)-AZ part is unused and in its original packaging.
Return procedure for 2SK3712(1)-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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