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Renesas 2SK3712(1)-AZ

Part No.:
2SK3712(1)-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK3712(1)-AZ.pdf
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,169

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Product details

Overview

2SK3712(1)-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching in DC/DC converters, featuring VDSS = 250 V, RDS(on) ≤ 0.58 Ω at VGS = 10 V and ID = 4.5 A, built-in gate protection diode, and TO-251 (MP-3) package with drain-connected fin for enhanced thermal dissipation.

For engineers reviewing the 2SK3712(1)-AZ datasheet, 2SK3712(1)-AZ pinout, 2SK3712(1)-AZ application, or 2SK3712(1)-AZ equivalent, key selection criteria include avalanche ruggedness (EAS = 8.1 mJ), low Ciss (450 pF typ.), fast switching (td(on)/tr = 8 ns each), and body diode recovery performance (Qrr = 630 nC, trr = 150 ns).

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, leveraging its 250 V blocking capability and 9.0 A DC drain current rating. Its gate threshold voltage (VGS(off) = 2.5–4.5 V) enables compatibility with standard 10 V gate drivers, while the integrated gate protection diode mitigates ESD risk during handling and assembly.

The 2SK3712(1)-AZ exhibits strong avalanche robustness (IAS = 9 A, EAS = 8.1 mJ under defined test conditions) and thermally stable RDS(on) behavior up to 150 °C channel temperature. Its low output capacitance (Coss = 100 pF) and reverse transfer capacitance (Crss = 40 pF) support efficient operation in high-frequency switching applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS250 V - supports primary-side switching in offline 200 VAC-derived DC/DC stages without derating.
RDS(on)0.58 Ω max - limits conduction loss to ≤23.5 W at 9 A DC, enabling compact heatsink design.
Ciss450 pF typ. - reduces gate drive power requirement and improves switching speed control.
QG14 nC - determines minimum gate driver peak current needed for <100 ns transition times.
EAS8.1 mJ - allows safe single-pulse inductive energy absorption without failure in flyback or LLC resonant circuits.
tr/tf8 ns / 6 ns - enables >1 MHz switching in optimized layouts with minimal overlap loss.
VF(S-D)1.5 V max - defines forward drop of intrinsic body diode during synchronous rectification or freewheeling.

Pinout & Package

2SK3712(1)-AZ uses the TO-251 (MP-3) surface-mount package with exposed drain-fin for direct PCB thermal coupling. Pin 1 is Gate, Pin 2 is Drain (connected to metal fin), Pin 3 is Source.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives gate drive signal; requires external series resistor to damp ringing and limit dV/dt-induced turn-on.
2 (Drain)Main current path outputInternally connected to metal fin - must be soldered to large copper pour for thermal management and EMI reduction.
3 (Source)Reference node for gate driveServes as return path for load current and gate drive loop; layout must minimize inductance to prevent oscillation.

Key Features

FeatureDesign Value
Built-in gate protection diodeESD immunity per HBM ≥2 kV - eliminates need for discrete gate Zener in basic handling environments.
Low Crss (40 pF)Reduces Miller effect, enabling stable switching even with moderate gate resistance and high dV/dt across drain-source.
Avalanche-rated constructionGuaranteed single-pulse ruggedness (IAS = 9 A, EAS = 8.1 mJ) - simplifies snubber design in inductive load switching.
High channel temperature rating (150 °C)Supports operation in sealed enclosures or high ambient environments without forced air cooling.
TO-251 drain-fin thermal pathThermal resistance Rth(ch-C) = 3.125 °C/W - enables >10 W continuous dissipation with 2 oz copper and 20 cm² pad area.

Applications

DC/DC Converter Primary SwitchIndustrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 250 V input isolated flyback converter delivering 24 V/5 A to industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with hard commutation and repetitive avalanche stress.

Use Value: Low RDS(on) minimizes conduction loss; high VDSS and EAS ensure reliability during output short-circuit events.

Use Scenario: 48 V bus-powered 3-phase BLDC motor controller for automated warehouse conveyors.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, conducting up to 9 A DC with 10 μs dead-time constraints.

Use Value: Fast tf (6 ns) and low QGD (7 nC) reduce cross-conduction risk and improve PWM fidelity at 20 kHz.

LED Driver High-Side SwitchPower Factor Correction Boost Stage

Use Scenario: Constant-current LED string driver for outdoor signage powered from 200–240 VAC rectified bus.

IC Role / Device Role / Timing Role: High-side switch controlling LED current via PWM dimming at 1–5 kHz.

Use Value: Integrated gate protection diode prevents gate oxide damage during hot-plug or transient overvoltage events.

Use Scenario: 300 W active PFC boost converter stage in medical-grade AC/DC power supply.

IC Role / Device Role / Timing Role: Main switching element handling 1.2 A RMS input current with 100 kHz switching frequency.

Use Value: Low Ciss and Crss maintain efficiency above 96% while reducing EMI filter size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP20NM50FPVDSS = 500 V, RDS(on) = 0.22 Ω, TO-220FP packageHigher voltage margin but larger footprint and higher gate charge (QG = 45 nC)Preferred where 500 V rating is required and board space permits through-hole mounting.
IXTP12N25PVDSS = 250 V, RDS(on) = 0.32 Ω, TO-220 package, no built-in gate diodeLower on-resistance but lacks integrated ESD protection and requires external gate clampSelected when maximum efficiency is critical and gate drive circuit includes discrete protection.

Compared with STP20NM50FP and IXTP12N25P, the 2SK3712(1)-AZ offers optimal balance of voltage rating, thermal performance in surface-mount form factor, and integrated gate protection-making it especially suitable for space-constrained, high-reliability DC/DC converters where layout simplicity and ESD robustness are prioritized.

Availability

2SK3712(1)-AZ is available at Aetrix Electronics and suitable for industrial motor drives, LED lighting systems, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 2SK3712(1)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The 2SK3712(1)-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion where reliability under repetitive stress and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK3712(1)-AZ at 25°C case temperature?

The 2SK3712(1)-AZ has a maximum continuous drain current (ID(DC)) rating of ±9.0 A at TC = 25°C. This rating assumes proper PCB thermal design with the TO-251 drain-fin soldered to sufficient copper area. Derating is required above 25°C case temperature per the published derating curve, reaching zero at 125°C case temperature.

Does the 2SK3712(1)-AZ include an integrated body diode, and what are its key parameters?

Yes, the 2SK3712(1)-AZ includes an intrinsic body diode between source and drain. Its forward voltage is specified as VF(S-D) = 0.9–1.5 V at IF = 9 A and VGS = 0 V, with reverse recovery time trr = 150 ns and reverse recovery charge Qrr = 630 nC under di/dt = 100 A/μs. These values are critical for evaluating freewheeling losses in hard-switched topologies.

Can the 2SK3712(1)-AZ be used in avalanche mode, and what are the validated limits?

Yes, the 2SK3712(1)-AZ is rated for single-pulse avalanche operation with IAS = 9 A and EAS = 8.1 mJ under defined test conditions (VDD = 125 V, RG = 25 Ω, L = 100 μH, starting Tch = 25°C). Repetitive avalanche is also supported at IAR = 9 A and EAR = 8.1 mJ, provided peak channel temperature remains ≤150°C. Operation beyond these limits risks parametric shift or failure.

What is the gate-to-source voltage rating for the 2SK3712(1)-AZ, and why is it important?

The 2SK3712(1)-AZ has a gate-to-source voltage rating (VGSS) of ±30 V. Exceeding this rating-even briefly-can cause irreversible gate oxide breakdown. This specification mandates use of gate drive circuits that clamp or limit VGS within this range, especially in high-dV/dt environments or when using bootstrap configurations with insufficient negative voltage suppression.

How does the TO-251 package of the 2SK3712(1)-AZ impact thermal and electrical performance compared to TO-252?

The TO-251 (MP-3) package of the 2SK3712(1)-AZ features a vertical drain-fin structure that provides lower thermal resistance from channel to case (Rth(ch-C) = 3.125 °C/W) than TO-252, improving power dissipation in constrained spaces. Electrically, its shorter internal leads reduce parasitic inductance, enhancing switching consistency and reducing voltage overshoot during turn-off-critical for high-speed, high-voltage operation.

2SK3712(1)-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK3712(1)-AZ FAQ

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Please submit a Request for Quotation (RFQ) for 2SK3712(1)-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3712(1)-AZ reliable?

The price and inventory of 2SK3712(1)-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3712(1)-AZ is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3712(1)-AZ?

For technical support, including 2SK3712(1)-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3712(1)-AZ requirements.

6.How does Aetrix verify that 2SK3712(1)-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3712(1)-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3712(1)-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3712(1)-AZ?

All 2SK3712(1)-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3712(1)-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3712(1)-AZ part is unused and in its original packaging.

Return procedure for 2SK3712(1)-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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