Renesas 2SK3712-AZ

Overview

2SK3712-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage DC/DC converters, featuring V_DSS = 250 V, R_DS(on) = 0.58 Ω max at V_GS = 10 V and I_D = 4.5 A, and built-in gate protection diode in TO-252 (MP-3Z) package.

For engineers reviewing the 2SK3712-AZ datasheet, 2SK3712-AZ pinout, 2SK3712-AZ application, or 2SK3712-AZ equivalent, this device serves as a robust switching element in isolated flyback and forward converter primary-side circuits where avalanche ruggedness, low conduction loss, and fast switching (t_d(off) = 21 ns) are critical.

Technical Context

The 2SK3712-AZ employs a planar vertical DMOS structure optimized for high-voltage blocking and low R_DS(on). Its gate threshold voltage range (V_GS(off) = 2.5–4.5 V) ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity.

It supports repetitive avalanche operation (I_AR = 9 A, E_AR = 8.1 mJ) under controlled inductive switching conditions (L = 100 μH, V_DD = 125 V), and integrates a body diode with t_rr = 150 ns and Q_rr = 630 nC-critical for synchronous rectification and snubberless designs.

Key Specifications

Pinout & Package

2SK3712-AZ is housed in TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP2NK25Z and IXTP20N25P, the 2SK3712-AZ uniquely balances TO-252 manufacturability, 0.58 Ω conduction loss, and fully characterized 8.1 mJ avalanche energy-making it optimal for mid-power, high-reliability SMT-based DC/DC converters requiring both efficiency and ruggedness.

Availability

2SK3712-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, AC/DC power supplies, and motor drive power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 2SK3712-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3712-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in off-line power conversion systems operating up to 250 V DC.

FAQ

What is the maximum continuous drain current rating for the 2SK3712-AZ at 25°C case temperature?

The 2SK3712-AZ has a maximum continuous drain current (I_D(DC)) rating of ±9.0 A at T_C = 25°C. This rating assumes proper heatsinking and reflects the device's ability to sustain 9 A with junction temperature held at or below 150°C. At elevated case temperatures, derating is required per the PT vs. T_C curve in the datasheet. The 2SK3712-AZ must not be operated beyond this limit without thermal analysis confirming safe T_j.

Does the 2SK3712-AZ include integrated gate protection, and how does it affect external circuit design?

Yes, the 2SK3712-AZ integrates a gate-to-source protection diode to guard against electrostatic discharge (ESD). This feature reduces the need for external gate Zener clamps in typical board-level ESD environments. However, Renesas explicitly states that an additional external protection circuit remains necessary if voltages exceeding the ±30 V gate rating may occur-such as from layout-induced ringing or system-level transients. Therefore, the 2SK3712-AZ still requires careful gate loop layout and may need supplemental clamping in high-noise industrial applications.

Can the 2SK3712-AZ be used in avalanche mode, and what are the validated conditions?

Yes, the 2SK3712-AZ is rated for both single-pulse (I_AS = 9 A, E_AS = 8.1 mJ) and repetitive avalanche operation (I_AR = 9 A, E_AR = 8.1 mJ). These ratings are validated under specific test conditions: V_DD = 125 V, L = 100 μH, R_G = 25 Ω, and V_GS switched from 20 V to 0 V. Operation outside these parameters-including higher inductance, voltage, or duty cycle-requires empirical validation. The 2SK3712-AZ's avalanche capability enables snubberless designs but does not eliminate need for thermal management during repeated events.

What is the typical gate charge (Q_G) of the 2SK3712-AZ, and how does it impact gate driver selection?

The 2SK3712-AZ has a total gate charge (Q_G) of 14 nC typical at V_DD = 200 V. This value determines the minimum gate driver current needed to achieve target switching speeds-for example, driving Q_G in 20 ns requires ≥700 mA peak current. The 2SK3712-AZ's Q_G is compatible with standard IC gate drivers (e.g., UCC27531, TC4420) and discrete transistor drivers. Exceeding recommended dV/dt or using undersized drivers may increase t_d(on)/t_d(off) and raise switching losses, especially at >200 kHz.

How does the body diode performance of the 2SK3712-AZ compare to discrete Schottky diodes in secondary-side rectification?

The 2SK3712-AZ's intrinsic body diode has V_F(S-D) = 0.9–1.5 V at I_F = 9 A and t_rr = 150 ns, making it less efficient than modern Schottky diodes (V_F ≈ 0.4–0.6 V, t_rr < 10 ns) for secondary-side synchronous rectification. However, its body diode is fully characterized and usable in auxiliary winding sensing, freewheeling paths, or low-duty-cycle applications where discrete diode cost or layout area is prohibitive. For high-efficiency outputs, the 2SK3712-AZ should be paired with an external Schottky or used only on the primary side.