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Renesas 2SK3712-Z-E1-AZ
- Part No.:
- 2SK3712-Z-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SK3712-Z-E1-AZ.pdf
- Description:
- MOSFET N-CH 250V 9A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:22,000
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Product details
Overview
2SK3712-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage DC/DC converters, featuring VDSS = 250 V, RDS(on) ≤ 0.58 Ω at VGS = 10 V and ID = 4.5 A, built-in gate protection diode, and TO-252 (MP-3Z) surface-mount package. It supports repetitive avalanche energy of 8.1 mJ and delivers fast switching with td(off) = 21 ns and QG = 14 nC.
For engineers reviewing the 2SK3712-Z-E1-AZ datasheet, 2SK3712-Z-E1-AZ pinout, 2SK3712-Z-E1-AZ application, or 2SK3712-Z-E1-AZ equivalent, this device is selected for high-efficiency, medium-power switching in industrial power supplies where low conduction loss, robust avalanche capability, and compact SMT packaging are critical design requirements.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for high-voltage operation and low on-resistance. Its gate oxide is rated for ±30 V, enabling robust drive margin against transient overvoltage, and its body diode exhibits trr = 150 ns and Qrr = 630 nC under specified conditions (IF = 9 A, di/dt = 100 A/μs).
The device is characterized for single-pulse and repetitive avalanche operation up to IAS = 9 A and EAS = 8.1 mJ, with test conditions defined by L = 100 μH, VDD = 125 V, and RG = 25 Ω. Thermal resistance from channel to case is fixed at Rth(ch–C) = 3.125 °C/W, supporting 40 W dissipation at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Maximum drain-source blocking voltage; enables use in 200 V-class DC bus systems with safety margin. |
| RDS(on) max | 0.58 Ω @ VGS = 10 V, ID = 4.5 A - Defines conduction loss of ≤2.6 W at rated current; critical for thermal management in sealed enclosures. |
| QG | 14 nC - Total gate charge determines driver strength requirement; compatible with standard 1-A peak gate drivers. |
| Ciss | 450 pF typ. @ VDS = 10 V - Input capacitance impacts switching speed and EMI generation during hard-switching transitions. |
| ID(DC) | ±9.0 A @ TC = 25°C - Continuous drain current rating assumes heatsink-mounted PCB layout with controlled case temperature. |
| EAS | 8.1 mJ - Repetitive avalanche energy rating allows safe operation under inductive turn-off stress without external snubbers. |
| VF(S–D) | 0.9–1.5 V @ IF = 9 A, VGS = 0 V - Body diode forward voltage affects synchronous rectification efficiency and reverse recovery losses. |
Pinout & Package
2SK3712-Z-E1-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal enhancement. The package features three main terminals plus an integrated fin connected to drain for improved heat transfer to the PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires external series resistor (RG) to damp ringing and control dV/dt during switching. |
| 2 (Drain) | High-side power terminal | Connected to drain region and metal fin; must be soldered to large PCB copper area for thermal conduction and current handling. |
| 3 (Source) | Reference node / return path | Serves as source reference for gate drive and current sensing; low-inductance connection essential for stable switching behavior. |
| 4 (Fin) | Drain thermal extension | Electrically tied to Drain (Pin 2); provides additional thermal interface area to PCB; not electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in gate protection diode | ESD protection between gate and source prevents damage from human-body-model transients up to ±2 kV (per JEDEC JESD22-A114), reducing need for external TVS in low-risk environments. |
| Low Ciss/Coss ratio | Ciss = 450 pF, Coss = 100 pF → ratio ≈ 4.5 - Enables higher effective gain in resonant topologies and improves zero-voltage-switching (ZVS) feasibility. |
| Specified avalanche capability | Repetitive EAR = 8.1 mJ - Allows reliable operation in flyback and active-clamp forward converters without derating for inductive energy storage. |
| Wide gate voltage rating | VGSS = ±30 V - Supports gate drive with 15 V logic-level controllers and tolerates overshoot from parasitic inductance in high-di/dt layouts. |
| Body diode with defined Qrr | Qrr = 630 nC @ di/dt = 100 A/μs - Enables predictable commutation loss estimation in half-bridge configurations with asynchronous rectification. |
Applications
| Industrial DC/DC Converters | LED Driver Power Stages |
|---|---|
|
Use Scenario: Step-down (buck) converter in programmable logic controller (PLC) power modules operating from 200–240 V AC rectified input. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer to output inductor; operates at 100–250 kHz with hard-switched PWM. Use Value: Low RDS(on) minimizes conduction loss across wide load range; TO-252 package enables automated assembly and thermal coupling to chassis ground plane. |
Use Scenario: Constant-current LED driver for high-bay lighting fixtures powered from 120/277 V AC mains via PFC front-end. IC Role / Device Role / Timing Role: Primary switch in flyback topology regulating LED string current; handles repetitive avalanche during demagnetization phase. Use Value: Specified EAR eliminates need for external clamp circuitry; fast tr/tf reduces switching loss at 65 kHz operation. |
| Motor Control H-Bridge Legs | AC-DC Adapter Primary Switch |
|
Use Scenario: Low-side switch in brushed DC motor driver for HVAC damper actuators requiring bidirectional stall protection. IC Role / Device Role / Timing Role: One quadrant of H-bridge delivering up to 9 A pulsed current; body diode conducts freewheeling current during PWM off-time. Use Value: Defined VF(S–D) and trr allow accurate loss modeling; TO-252 footprint simplifies dual-layout symmetry for matched leg pairs. |
Use Scenario: Primary-side switch in universal-input (90–264 V AC), 30 W offline adapter for smart home sensors. IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM) flyback; subjected to 250 V drain spikes during reset. Use Value: VDSS = 250 V provides 20% margin above worst-case reflected output voltage + leakage spike; robust gate oxide withstands line surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | VDSS = 500 V, RDS(on) = 0.22 Ω, TO-220FP package, no built-in gate protection diode | Higher voltage rating suits 400 V DC bus designs but larger package increases layout area and thermal resistance | Select when higher blocking voltage is required and external gate protection is acceptable; not drop-in due to different pinout and thermal profile. |
| IXTP12N25P | VDSS = 250 V, RDS(on) = 0.55 Ω, TO-220 package, specified for 100% UIS testing per JEDEC JESD22-A109 | Same voltage rating and similar RDS(on), but through-hole mounting limits automation and thermal performance vs. TO-252 | Choose for legacy through-hole production or where mechanical robustness outweighs SMT assembly efficiency; requires PCB redesign. |
Compared with STP20NM50FP and IXTP12N25P, the 2SK3712-Z-E1-AZ offers superior thermal performance in SMT form factor, integrated gate protection, and verified repetitive avalanche capability-making it optimal for space-constrained, high-reliability industrial DC/DC converters where board area and assembly yield are critical.
Availability
2SK3712-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, LED driver power stages, and motor control H-bridge legs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for 2SK3712-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Japan, specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The 2SK3712-Z-E1-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for reliability in industrial power conversion applications where ruggedness, consistent parametric performance, and long-term manufacturability are prioritized over ultra-high-frequency optimization.
FAQ
What is the maximum continuous drain current rating for the 2SK3712-Z-E1-AZ?
The 2SK3712-Z-E1-AZ has a maximum continuous drain current ID(DC) of ±9.0 A at case temperature TC = 25°C. This rating assumes proper PCB copper area for thermal conduction and is derated linearly above 25°C using the specified derating factor. At TC = 100°C, the usable ID(DC) drops to approximately 5.0 A. The 2SK3712-Z-E1-AZ must be mounted with its drain fin soldered to a minimum 100 mm² copper pour to achieve this rating.
Does the 2SK3712-Z-E1-AZ include integrated gate protection?
Yes, the 2SK3712-Z-E1-AZ integrates a gate-to-source protection diode as part of its internal equivalent circuit. This diode safeguards the gate oxide against electrostatic discharge (ESD) events, providing compliance with JEDEC JESD22-A114 (HBM ±2 kV). However, Renesas explicitly states that an external protection circuit remains necessary if voltages exceeding the ±30 V gate rating may occur in system operation - such as from transformer leakage spikes or layout-induced ringing. The 2SK3712-Z-E1-AZ's internal diode is not a substitute for full-system overvoltage clamping.
What is the avalanche energy rating for the 2SK3712-Z-E1-AZ, and how is it tested?
The 2SK3712-Z-E1-AZ is rated for repetitive avalanche energy EAR = 8.1 mJ and single-pulse EAS = 8.1 mJ. Testing follows JEDEC-standard inductive avalanche conditions: VDD = 125 V, L = 100 μH, RG = 25 Ω, gate drive transition from 20 V to 0 V, and starting channel temperature of 25°C. The 2SK3712-Z-E1-AZ is validated for repetitive operation under these constraints, enabling use in flyback and active-clamp topologies without external snubbers - provided peak IAS does not exceed 9 A per pulse.
Can the 2SK3712-Z-E1-AZ be used as a direct replacement for the 2SK3712 in TO-251 package?
No, the 2SK3712-Z-E1-AZ is not a direct replacement for the through-hole 2SK3712 (TO-251) due to fundamental package and mounting differences. While both share identical electrical specifications and silicon die, the 2SK3712-Z-E1-AZ uses TO-252 (MP-3Z) - a surface-mount package with different pin spacing, thermal interface, and soldering requirements. Substituting it requires PCB redesign to accommodate the SMT footprint, reflow profile adjustment, and verification of thermal performance under actual board-level conditions. The 2SK3712-Z-E1-AZ is a functional equivalent, not a pin-compatible drop-in.
What is the typical gate charge and how does it affect driver selection for the 2SK3712-Z-E1-AZ?
The 2SK3712-Z-E1-AZ has a total gate charge QG of 14 nC (typical) at VDD = 200 V. This value determines the peak current required from the gate driver to achieve desired switching speed: for example, driving QG in 50 ns demands ~280 mA average current. Standard logic-level MOSFET drivers (e.g., TC4420, MIC442x) with ≥1 A peak output easily support the 2SK3712-Z-E1-AZ. Gate resistance RG should be selected between 5–25 Ω to balance switching loss, EMI, and dV/dt control - confirmed in the 2SK3712-Z-E1-AZ datasheet's switching time test circuits.
2SK3712-Z-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 580mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3Z)
2SK3712-Z-E1-AZ FAQ
1.How can I place an order for 2SK3712-Z-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3712-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3712-Z-E1-AZ reliable?
The price and inventory of 2SK3712-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3712-Z-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3712-Z-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3712-Z-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3712-Z-E1-AZ?
2SK3712-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3712-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3712-Z-E1-AZ?
For technical support, including 2SK3712-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3712-Z-E1-AZ requirements.
6.How does Aetrix verify that 2SK3712-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3712-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3712-Z-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3712-Z-E1-AZ?
All 2SK3712-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3712-Z-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3712-Z-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3712-Z-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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