Renesas 2SK3714(0)-S12-AZ

Overview

2SK3714(0)-S12-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial SMPS applications. It delivers R_DS(on)1 = 13 mΩ max at V_GS = 10 V / I_D = 25 A, supports ±160 A pulsed drain current, and features integrated gate protection diode with 96 mJ single avalanche energy rating.

For engineers reviewing the 2SK3714(0)-S12-AZ datasheet, 2SK3714(0)-S12-AZ pinout, 2SK3714(0)-S12-AZ application, or 2SK3714(0)-S12-AZ equivalent, key selection criteria include low R_DS(on) at 4 V gate drive (22 mΩ max), fast switching (t_d(off) = 58 ns), body diode reverse recovery time (t_rr = 46 ns), and isolated TO-220 package thermal performance (R_th(ch-C) = 3.57 °C/W).

Technical Context

This device implements a vertical double-diffused MOS (VDMOS) structure optimized for hard-switched power conversion. Its gate threshold voltage range (1.5–2.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers when used with appropriate gate resistance (e.g., RG = 0 Ω for minimal t_d(off)). The built-in gate-source ESD protection diode is rated for ±20 V but requires external clamping for transient overvoltage conditions exceeding V_GSS.

The MOSFET operates within a channel temperature limit of 150 °C and exhibits monotonic R_DS(on) increase with temperature-rising to ~30 mΩ at T_ch = 125 °C under 40 A DC bias. Its C_iss = 3200 pF (typ.) and Q_G = 60 nC support efficient gate driving in 100–500 kHz switching topologies while maintaining low dynamic losses.

Key Specifications

Pinout & Package

2SK3714(0)-S12-AZ uses the Isolated TO-220 (MP-45F) package with electrically isolated drain tab, enabling direct mounting to heatsink without insulating washer. Thermal resistance from channel to case is 3.57 °C/W, supporting up to 35 W continuous dissipation at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP50N055T and IRF1404ZLPbF, the 2SK3714(0)-S12-AZ offers balanced trade-offs: 60 V rating with isolation, 13 mΩ R_DS(on), and 96 mJ avalanche capability-making it optimal for ruggedized 48 V industrial converters where reliability under transient stress is prioritized over ultra-low conduction loss.

Availability

2SK3714(0)-S12-AZ is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and uninterruptible power systems requiring stable component supply and long-term obsolescence management.

Supply support for 2SK3714(0)-S12-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK3714 belongs to Renesas' legacy discrete power MOSFET product line, engineered for high-reliability industrial switching applications demanding robust avalanche performance and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for the 2SK3714(0)-S12-AZ at 25°C case temperature?

The 2SK3714(0)-S12-AZ has a maximum continuous drain current (I_D(DC)) rating of ±50 A when the case temperature (T_C) is maintained at 25°C. This rating assumes proper heatsinking and is limited by the device's total power dissipation of 35 W at T_C = 25°C. At higher case temperatures, derating applies per the datasheet's PT vs. TC curve.

Does the 2SK3714(0)-S12-AZ have a built-in body diode, and what are its key parameters?

Yes, the 2SK3714(0)-S12-AZ integrates a parasitic body diode between source and drain. Its forward voltage (V_F(S-D)) is 0.94–1.5 V at I_F = 50 A and V_GS = 0 V, with reverse recovery time (t_rr) of 46 ns and reverse recovery charge (Q_rr) of 80 nC under specified test conditions (di/dt = 100 A/µs). These values directly impact freewheeling losses in non-synchronous topologies.

Can the 2SK3714(0)-S12-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No-while the 2SK3714(0)-S12-AZ specifies R_DS(on)2 = 22 mΩ max at V_GS = 4.0 V, a 3.3 V GPIO cannot reliably achieve full enhancement due to its gate threshold voltage range (1.5–2.5 V) and required overdrive margin. A dedicated gate driver IC with ≥4.5 V output is recommended to ensure low R_DS(on) and stable switching behavior across temperature and process variation.

What does "Isolated TO-220" mean for the 2SK3714(0)-S12-AZ package, and why does it matter?

"Isolated TO-220" means the drain metal tab is electrically insulated from the internal die substrate, allowing direct mounting to a grounded heatsink without additional insulating hardware. For the 2SK3714(0)-S12-AZ, this simplifies thermal design in high-voltage applications like SMPS and motor drives, eliminates risk of short circuits from tab-to-heatsink contact, and maintains system-level isolation integrity-critical in industrial equipment meeting IEC 61800 or UL 61800 standards.

How is avalanche capability specified for the 2SK3714(0)-S12-AZ, and what real-world condition does it protect against?

The 2SK3714(0)-S12-AZ is rated for single-pulse avalanche with I_AS = 31 A and E_AS = 96 mJ under defined test conditions (V_DD = 30 V, R_G = 25 Ω, T_ch = 25°C). This specification ensures survivability during unclamped inductive switching events-such as sudden load disconnection in motor drives or transformer saturation in SMPS-where stored magnetic energy must be absorbed by the MOSFET itself rather than external snubbers.