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Renesas 2SK3740-ZK-E1-AZ

Part No.:
2SK3740-ZK-E1-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK3740-ZK-E1-AZ.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
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Payment
Shipping:
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Inventory:2,400

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Product details

Overview

2SK3740-ZK-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring RDS(on) = 160 mΩ max at VGS = 10 V and ID = 10 A, VDSS = 250 V, and TO-263 (MP-25ZK) surface-mount package. It delivers robust avalanche capability (EAS = 40 mJ), low gate charge (QG = 47 nC typ.), and fast switching (td(off) = 49 ns), making it suitable for DC/DC converters and lamp drivers.

For engineers reviewing the 2SK3740-ZK-E1-AZ datasheet, 2SK3740-ZK-E1-AZ pinout, 2SK3740-ZK-E1-AZ application, or 2SK3740-ZK-E1-AZ equivalent, this page provides verified electrical parameters, thermal derating behavior, body diode recovery characteristics (trr = 210 ns), safe operating area limits, and validated alternative parts for industrial power switching designs.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage blocking and low conduction loss. Its gate threshold voltage (VGS(off) = 2.5–4.5 V) ensures reliable turn-on with standard logic-level gate drivers, while its 1.25 °C/W channel-to-case thermal resistance supports high-power operation when mounted on thermally enhanced PCBs.

The integrated body diode exhibits VF(S-D) = 0.91 V at IF = 20 A and trr = 210 ns under specified conditions, enabling use in synchronous rectification and freewheeling paths. Avalanche ruggedness is confirmed per test circuit with L = 100 µH, VDD = 125 V, and RG = 25 Ω.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 250 V - Enables use in 200 V-class DC bus systems with margin for voltage transients.
RDS(on) max 160 mΩ at VGS = 10 V, ID = 10 A - Limits conduction loss to ≤16 W at 10 A, critical for thermal management in compact converters.
QG 47 nC typ. at VDD = 200 V - Determines gate driver power requirement and switching speed in hard-switched topologies.
EAS 40 mJ - Supports single-pulse inductive energy absorption without failure, essential for relay/snubberless actuator drive.
tr/tf 17 ns / 9 ns - Enables >1 MHz switching in resonant or ZVS circuits with minimal overlap loss.
Tch max 150 °C - Sets maximum junction temperature limit for reliability modeling and lifetime estimation per Arrhenius equation.
Ciss 1720 pF - Influences gate drive loop stability and EMI filter design in high-frequency SMPS.

Pinout & Package

2SK3740-ZK-E1-AZ is housed in a TO-263 (MP-25ZK) surface-mount package with exposed drain tab (Pin 4) for thermal and electrical connection. The package features 4 terminals: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and Fin/Drain (Pin 4). Pin 4 is electrically and thermally tied to Pin 2.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control electrode Receives gate drive signal; ±30 V rating allows compatibility with standard isolated gate drivers.
2 (Drain) High-side current path input Connects to high-voltage rail; shares thermal path with Pin 4 for enhanced heat dissipation.
3 (Source) Reference node for gate drive Serves as return path for load current and gate drive reference; must be routed with low inductance.
4 (Fin/Drain) Thermal and electrical drain extension Large copper tab for soldering to PCB thermal pad; reduces Rth(ch-A) to 83.3 °C/W when properly mounted.

Key Features

Feature Design Value
Low RDS(on) with high VDSS 160 mΩ @ 250 V enables efficient 200 V-class switching with <1.6 W conduction loss at 10 A.
Fast switching with low QG 47 nC total gate charge supports sub-100 ns turn-off delay, reducing switching losses in 500 kHz+ converters.
Robust avalanche capability Rated for 40 mJ single-pulse avalanche energy, eliminating need for external snubbers in inductive load switching.
Integrated gate protection diode ESD protection diode between gate and source prevents damage during handling and board assembly.
Surface-mount TO-263 package MP-25ZK footprint enables automated assembly and high-current PCB routing via exposed drain tab.

Applications

Lamp Driver DC/DC Converter Primary Switch

Use Scenario: High-intensity discharge (HID) lamp ballast requiring 200–240 V DC supply switching at 10–20 kHz.

IC Role / Device Role / Timing Role: Main high-side switching element controlling lamp current via PWM duty cycle.

Use Value: Low RDS(on) minimizes heating during continuous conduction mode; avalanche rating handles lamp ignition surges.

Use Scenario: 200 V input, 12 V output flyback or forward converter in industrial power supplies.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–500 kHz with unidirectional current flow.

Use Value: Fast tr/tf and low Ciss reduce switching losses; TO-263 thermal pad maintains Tch < 125 °C at full load.

Actuator Driver (Solenoid/Valve) Motor Control Half-Bridge Leg

Use Scenario: 24–48 V solenoid control in factory automation, with inductive kickback up to 150 V.

IC Role / Device Role / Timing Role: Low-side or high-side switch enabling precise pulse-width modulated actuation.

Use Value: Confirmed single-avalanche rating absorbs inductive energy without clamping diodes; VF(S-D) = 0.91 V reduces freewheeling loss.

Use Scenario: 24–48 V brushed DC motor H-bridge where one leg uses N-channel high-side configuration.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology, driven by bootstrap or isolated gate driver.

Use Value: VGS(off) range ensures stable turn-on with 10 V gate drive; low QG enables clean gate waveform even with limited driver current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP20NM50FP VDSS = 500 V, RDS(on) = 240 mΩ, TO-220FP package, no integrated gate protection diode. Higher voltage rating but higher RDS(on); requires external gate protection; unsuitable for space-constrained SMT layouts. Select when 500 V blocking is mandatory and thermal budget allows higher conduction loss.
IXTP20N50P VDSS = 500 V, RDS(on) = 220 mΩ, TO-220 package, lower QG (38 nC), no avalanche rating specified. Superior switching speed but lacks documented EAS; not qualified for repetitive inductive switching without external clamping. Prefer for high-frequency ZVS/ZCS topologies where avalanche stress is absent and layout permits through-hole mounting.

Compared with STP20NM50FP and IXTP20N50P, the 2SK3740-ZK-E1-AZ offers optimal balance of 250 V rating, low RDS(on), proven avalanche ruggedness, and SMT-ready TO-263 packaging-making it uniquely suited for cost-sensitive, thermally constrained industrial switching where reliability under transient overload is critical.

Availability

2SK3740-ZK-E1-AZ is available at Aetrix Electronics and suitable for lamp drivers, DC/DC converters, and actuator control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SK3740-ZK-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3740 belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for industrial switching applications demanding ruggedness, low conduction loss, and surface-mount manufacturability.

FAQ

What is the maximum continuous drain current rating for the 2SK3740-ZK-E1-AZ at 25°C case temperature?

The 2SK3740-ZK-E1-AZ has a DC drain current rating of ±20 A at TC = 25°C, as specified in its Absolute Maximum Ratings table. This value assumes ideal heatsinking; actual usable current must be derated per the Total Power Dissipation vs. Case Temperature curve, especially above 25°C. For sustained 20 A operation, thermal design must maintain TC ≤ 25°C using the TO-263's exposed drain tab.

Does the 2SK3740-ZK-E1-AZ include built-in gate protection?

Yes, the 2SK3740-ZK-E1-AZ integrates a gate-to-source protection diode to guard against electrostatic discharge (ESD) during handling and assembly. However, the datasheet explicitly states that an external protection circuit remains necessary if voltages exceeding the ±30 V gate rating may occur in the final application-such as from Miller-induced spikes or gate driver faults.

What is the typical reverse recovery time (trr) of the body diode in the 2SK3740-ZK-E1-AZ?

The body diode of the 2SK3740-ZK-E1-AZ has a reverse recovery time (trr) of 210 ns under test conditions of IF = 20 A, VGS = 0 V, and di/dt = 100 A/µs. This parameter is critical for freewheeling performance in buck or half-bridge configurations, and its consistency across temperature is confirmed in the Typical Characteristics section.

Can the 2SK3740-ZK-E1-AZ be used in avalanche-mode operation?

Yes-the 2SK3740-ZK-E1-AZ is rated for single-pulse avalanche operation with IAS = 20 A and EAS = 40 mJ under defined conditions (VDD = 125 V, L = 100 µH, RG = 25 Ω, starting Tch = 25°C). It is not rated for repetitive avalanche; repeated exposure beyond single-pulse limits risks parametric shift or catastrophic failure.

What is the gate threshold voltage range for the 2SK3740-ZK-E1-AZ?

The gate threshold voltage (VGS(off)) of the 2SK3740-ZK-E1-AZ is specified as 2.5 V (min) to 4.5 V (max) at VDS = 10 V and ID = 1.0 mA. This range ensures consistent turn-on behavior with 5 V or 10 V gate drive, and its variation with channel temperature is documented in the Typical Characteristics curves.

2SK3740-ZK-E1-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK3740-ZK-E1-AZ FAQ

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Please submit a Request for Quotation (RFQ) for 2SK3740-ZK-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 2SK3740-ZK-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3740-ZK-E1-AZ is usually 5 days.

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5.How can I obtain technical support or documentation for 2SK3740-ZK-E1-AZ?

For technical support, including 2SK3740-ZK-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3740-ZK-E1-AZ requirements.

6.How does Aetrix verify that 2SK3740-ZK-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3740-ZK-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3740-ZK-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3740-ZK-E1-AZ?

All 2SK3740-ZK-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3740-ZK-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3740-ZK-E1-AZ part is unused and in its original packaging.

Return procedure for 2SK3740-ZK-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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