Renesas 2SK3740-ZK-E1-AZ
- Part No.:
- 2SK3740-ZK-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3740-ZK-E1-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
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Inventory:2,400
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Product details
Overview
2SK3740-ZK-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring RDS(on) = 160 mΩ max at VGS = 10 V and ID = 10 A, VDSS = 250 V, and TO-263 (MP-25ZK) surface-mount package. It delivers robust avalanche capability (EAS = 40 mJ), low gate charge (QG = 47 nC typ.), and fast switching (td(off) = 49 ns), making it suitable for DC/DC converters and lamp drivers.
For engineers reviewing the 2SK3740-ZK-E1-AZ datasheet, 2SK3740-ZK-E1-AZ pinout, 2SK3740-ZK-E1-AZ application, or 2SK3740-ZK-E1-AZ equivalent, this page provides verified electrical parameters, thermal derating behavior, body diode recovery characteristics (trr = 210 ns), safe operating area limits, and validated alternative parts for industrial power switching designs.
Technical Context
This device employs a planar vertical DMOS structure optimized for high-voltage blocking and low conduction loss. Its gate threshold voltage (VGS(off) = 2.5–4.5 V) ensures reliable turn-on with standard logic-level gate drivers, while its 1.25 °C/W channel-to-case thermal resistance supports high-power operation when mounted on thermally enhanced PCBs.
The integrated body diode exhibits VF(S-D) = 0.91 V at IF = 20 A and trr = 210 ns under specified conditions, enabling use in synchronous rectification and freewheeling paths. Avalanche ruggedness is confirmed per test circuit with L = 100 µH, VDD = 125 V, and RG = 25 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Enables use in 200 V-class DC bus systems with margin for voltage transients. |
| RDS(on) max | 160 mΩ at VGS = 10 V, ID = 10 A - Limits conduction loss to ≤16 W at 10 A, critical for thermal management in compact converters. |
| QG | 47 nC typ. at VDD = 200 V - Determines gate driver power requirement and switching speed in hard-switched topologies. |
| EAS | 40 mJ - Supports single-pulse inductive energy absorption without failure, essential for relay/snubberless actuator drive. |
| tr/tf | 17 ns / 9 ns - Enables >1 MHz switching in resonant or ZVS circuits with minimal overlap loss. |
| Tch max | 150 °C - Sets maximum junction temperature limit for reliability modeling and lifetime estimation per Arrhenius equation. |
| Ciss | 1720 pF - Influences gate drive loop stability and EMI filter design in high-frequency SMPS. |
Pinout & Package
2SK3740-ZK-E1-AZ is housed in a TO-263 (MP-25ZK) surface-mount package with exposed drain tab (Pin 4) for thermal and electrical connection. The package features 4 terminals: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and Fin/Drain (Pin 4). Pin 4 is electrically and thermally tied to Pin 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; ±30 V rating allows compatibility with standard isolated gate drivers. |
| 2 (Drain) | High-side current path input | Connects to high-voltage rail; shares thermal path with Pin 4 for enhanced heat dissipation. |
| 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate drive reference; must be routed with low inductance. |
| 4 (Fin/Drain) | Thermal and electrical drain extension | Large copper tab for soldering to PCB thermal pad; reduces Rth(ch-A) to 83.3 °C/W when properly mounted. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 160 mΩ @ 250 V enables efficient 200 V-class switching with <1.6 W conduction loss at 10 A. |
| Fast switching with low QG | 47 nC total gate charge supports sub-100 ns turn-off delay, reducing switching losses in 500 kHz+ converters. |
| Robust avalanche capability | Rated for 40 mJ single-pulse avalanche energy, eliminating need for external snubbers in inductive load switching. |
| Integrated gate protection diode | ESD protection diode between gate and source prevents damage during handling and board assembly. |
| Surface-mount TO-263 package | MP-25ZK footprint enables automated assembly and high-current PCB routing via exposed drain tab. |
Applications
| Lamp Driver | DC/DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-intensity discharge (HID) lamp ballast requiring 200–240 V DC supply switching at 10–20 kHz. IC Role / Device Role / Timing Role: Main high-side switching element controlling lamp current via PWM duty cycle. Use Value: Low RDS(on) minimizes heating during continuous conduction mode; avalanche rating handles lamp ignition surges. |
Use Scenario: 200 V input, 12 V output flyback or forward converter in industrial power supplies. IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–500 kHz with unidirectional current flow. Use Value: Fast tr/tf and low Ciss reduce switching losses; TO-263 thermal pad maintains Tch < 125 °C at full load. |
| Actuator Driver (Solenoid/Valve) | Motor Control Half-Bridge Leg |
|
Use Scenario: 24–48 V solenoid control in factory automation, with inductive kickback up to 150 V. IC Role / Device Role / Timing Role: Low-side or high-side switch enabling precise pulse-width modulated actuation. Use Value: Confirmed single-avalanche rating absorbs inductive energy without clamping diodes; VF(S-D) = 0.91 V reduces freewheeling loss. |
Use Scenario: 24–48 V brushed DC motor H-bridge where one leg uses N-channel high-side configuration. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology, driven by bootstrap or isolated gate driver. Use Value: VGS(off) range ensures stable turn-on with 10 V gate drive; low QG enables clean gate waveform even with limited driver current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | VDSS = 500 V, RDS(on) = 240 mΩ, TO-220FP package, no integrated gate protection diode. | Higher voltage rating but higher RDS(on); requires external gate protection; unsuitable for space-constrained SMT layouts. | Select when 500 V blocking is mandatory and thermal budget allows higher conduction loss. |
| IXTP20N50P | VDSS = 500 V, RDS(on) = 220 mΩ, TO-220 package, lower QG (38 nC), no avalanche rating specified. | Superior switching speed but lacks documented EAS; not qualified for repetitive inductive switching without external clamping. | Prefer for high-frequency ZVS/ZCS topologies where avalanche stress is absent and layout permits through-hole mounting. |
Compared with STP20NM50FP and IXTP20N50P, the 2SK3740-ZK-E1-AZ offers optimal balance of 250 V rating, low RDS(on), proven avalanche ruggedness, and SMT-ready TO-263 packaging-making it uniquely suited for cost-sensitive, thermally constrained industrial switching where reliability under transient overload is critical.
Availability
2SK3740-ZK-E1-AZ is available at Aetrix Electronics and suitable for lamp drivers, DC/DC converters, and actuator control systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for 2SK3740-ZK-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.
The 2SK3740 belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for industrial switching applications demanding ruggedness, low conduction loss, and surface-mount manufacturability.
FAQ
What is the maximum continuous drain current rating for the 2SK3740-ZK-E1-AZ at 25°C case temperature?
The 2SK3740-ZK-E1-AZ has a DC drain current rating of ±20 A at TC = 25°C, as specified in its Absolute Maximum Ratings table. This value assumes ideal heatsinking; actual usable current must be derated per the Total Power Dissipation vs. Case Temperature curve, especially above 25°C. For sustained 20 A operation, thermal design must maintain TC ≤ 25°C using the TO-263's exposed drain tab.
Does the 2SK3740-ZK-E1-AZ include built-in gate protection?
Yes, the 2SK3740-ZK-E1-AZ integrates a gate-to-source protection diode to guard against electrostatic discharge (ESD) during handling and assembly. However, the datasheet explicitly states that an external protection circuit remains necessary if voltages exceeding the ±30 V gate rating may occur in the final application-such as from Miller-induced spikes or gate driver faults.
What is the typical reverse recovery time (trr) of the body diode in the 2SK3740-ZK-E1-AZ?
The body diode of the 2SK3740-ZK-E1-AZ has a reverse recovery time (trr) of 210 ns under test conditions of IF = 20 A, VGS = 0 V, and di/dt = 100 A/µs. This parameter is critical for freewheeling performance in buck or half-bridge configurations, and its consistency across temperature is confirmed in the Typical Characteristics section.
Can the 2SK3740-ZK-E1-AZ be used in avalanche-mode operation?
Yes-the 2SK3740-ZK-E1-AZ is rated for single-pulse avalanche operation with IAS = 20 A and EAS = 40 mJ under defined conditions (VDD = 125 V, L = 100 µH, RG = 25 Ω, starting Tch = 25°C). It is not rated for repetitive avalanche; repeated exposure beyond single-pulse limits risks parametric shift or catastrophic failure.
What is the gate threshold voltage range for the 2SK3740-ZK-E1-AZ?
The gate threshold voltage (VGS(off)) of the 2SK3740-ZK-E1-AZ is specified as 2.5 V (min) to 4.5 V (max) at VDS = 10 V and ID = 1.0 mA. This range ensures consistent turn-on behavior with 5 V or 10 V gate drive, and its variation with channel temperature is documented in the Typical Characteristics curves.
2SK3740-ZK-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
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- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
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2SK3740-ZK-E1-AZ FAQ
1.How can I place an order for 2SK3740-ZK-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3740-ZK-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 2SK3740-ZK-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3740-ZK-E1-AZ is usually 5 days.
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5.How can I obtain technical support or documentation for 2SK3740-ZK-E1-AZ?
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6.How does Aetrix verify that 2SK3740-ZK-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3740-ZK-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3740-ZK-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3740-ZK-E1-AZ?
All 2SK3740-ZK-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3740-ZK-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3740-ZK-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3740-ZK-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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