Renesas 2SK3811-ZP-E1-AY

Overview

2SK3811-ZP-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on) = 1.8 mΩ max at V_GS = 10 V and I_D = 55 A, supports ±110 A DC drain current, and features TO-263 (MP-25ZP) surface-mount packaging with integrated drain-fin thermal enhancement.

For engineers reviewing the 2SK3811-ZP-E1-AY datasheet, 2SK3811-ZP-E1-AY pinout, 2SK3811-ZP-E1-AY application, or 2SK3811-ZP-E1-AY equivalent, key selection criteria include avalanche energy rating (E_AS = 518 mJ), gate charge (Q_G = 260 nC), body diode reverse recovery (t_rr = 60 ns), and safe operating area under pulsed conditions up to 440 A.

Technical Context

This device uses a planar vertical DMOS structure optimized for low conduction loss and robust unclamped inductive switching (UIS). Its gate threshold voltage (V_GS(off) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the 17.7 nF input capacitance (C_iss) and 1.3 nF reverse transfer capacitance (C_rss) support fast switching with controlled EMI in hard-switched topologies.

The integrated source-drain body diode exhibits VF(S-D) = 0.87–1.5 V at 110 A and t_rr = 60 ns with Q_rr = 80 nC, enabling synchronous rectification replacement in medium-frequency DC-DC converters. Thermal resistance from channel to case is 0.587°C/W, requiring direct heatsinking via the exposed drain tab.

Key Specifications

Pinout & Package

Package: TO-263 (MP-25ZP), surface-mount with exposed drain tab (Pin 2 & 4) for low-thermal-resistance heatsinking. Dimensions: 15.25 × 10.0 × 4.45 mm (L × W × H), lead-free per RoHS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP110N04T2 and STP110NF04L, the 2SK3811-ZP-E1-AY offers superior conduction efficiency and documented UIS ruggedness, making it preferred for high-reliability industrial switching where thermal and transient stress coexist.

Availability

2SK3811-ZP-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, high-power DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term lifecycle support.

Supply support for 2SK3811-ZP-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3811-ZP-E1-AY belongs to Renesas' legacy high-current discrete MOSFET product line, engineered specifically for ruggedized industrial power conversion where low R_DS(on), high pulse current, and avalanche survivability are mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK3811-ZP-E1-AY?

The 2SK3811-ZP-E1-AY has a rated DC drain current (I_D(DC)) of ±110 A at T_C = 25°C. This rating assumes direct heatsinking to maintain case temperature at or below 25°C; actual usable current must be derated per the datasheet's PT vs. TC curve, dropping to ~70 A at T_C = 100°C. The 2SK3811-ZP-E1-AY is not rated for 110 A at ambient temperature without forced cooling.

Does the 2SK3811-ZP-E1-AY have a specified avalanche energy rating?

Yes, the 2SK3811-ZP-E1-AY is fully characterized for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 518 mJ and repetitive avalanche current (I_AR) of 72 A. These values were measured under defined test conditions (V_DD = 20 V, R_G = 25 Ω, starting T_ch = 25°C) and are guaranteed per the D16737EJ1V0DS datasheet. The 2SK3811-ZP-E1-AY is suitable for designs requiring intrinsic avalanche ruggedness without external protection.

What is the gate threshold voltage range for the 2SK3811-ZP-E1-AY?

The gate threshold voltage (V_GS(off)) for the 2SK3811-ZP-E1-AY is specified as 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures consistent turn-on behavior across process variation and temperature, supporting reliable operation with standard 10 V gate drivers. The 2SK3811-ZP-E1-AY does not require negative gate bias for full depletion and remains fully enhanced above 4.0 V.

Can the 2SK3811-ZP-E1-AY be used in synchronous rectification applications?

The 2SK3811-ZP-E1-AY includes an integrated body diode with VF(S-D) = 0.87–1.5 V at 110 A and t_rr = 60 ns, making it suitable for non-synchronous rectification. However, its relatively high Q_G (260 nC) and lack of dedicated synchronous control timing specs mean it is not optimized for high-frequency synchronous rectifier use. For such roles, dedicated low-Q_G, logic-level MOSFETs are preferred. The 2SK3811-ZP-E1-AY excels instead in main switching positions.

What package type does the 2SK3811-ZP-E1-AY use, and how is thermal management implemented?

The 2SK3811-ZP-E1-AY uses the TO-263 (MP-25ZP) surface-mount package with an exposed drain tab (Pins 2 and 4) serving as both electrical drain connection and primary thermal path. Effective thermal management requires soldering this tab directly to a copper pour or heatsink with thermal interface material. The channel-to-case thermal resistance is 0.587°C/W, so maintaining T_C ≤ 100°C demands ≤120 W power dissipation with adequate heatsinking. The 2SK3811-ZP-E1-AY cannot rely on PCB traces alone for heat removal.