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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3812-ZP-E1-AZ

Name: 2SK3812-ZP-E1-AZ
Brand: Renesas
SKU: 2SK3812-ZP-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3812-ZP-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: 2SK3812-ZP-E1-AZ.pdf

Description:: MP-25LZP

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Product details

Overview

2SK3812-ZP-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs. It delivers R_DS(on) = 2.8 mΩ max at V_GS = 10 V, supports ±110 A DC drain current, and features 60 V V_DSS, 397 mJ single avalanche energy, and TO-263 (MP-25ZP) surface-mount package - enabling compact, high-efficiency 48 V industrial power supplies.

For engineers reviewing the 2SK3812-ZP-E1-AZ datasheet, 2SK3812-ZP-E1-AZ pinout, 2SK3812-ZP-E1-AZ application, or 2SK3812-ZP-E1-AZ equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive (3.7 mΩ max), robust 63 A repetitive avalanche rating, body diode reverse recovery time (53 ns), and thermal resistance (R_th(ch-C) = 0.587 °C/W) for high-power density thermal design.

Technical Context

The 2SK3812-ZP-E1-AZ employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level controllers, while total gate charge (Q_G = 250 nC) balances switching speed and gate driver loss.

It integrates a monolithic body diode with VF(S-D) = 0.87–1.5 V at 110 A and trr = 53 ns, supporting synchronous rectification and freewheeling in half-bridge configurations. The device's 150 °C channel temperature rating and 83.3 °C/W transient thermal resistance (ch-to-ambient) support operation under pulsed load conditions up to 440 A peak.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % overvoltage margin.
R_DS(on)1	2.8 mΩ max @ V_GS = 10 V, I_D = 55 A - Enables <1.7 W conduction loss at 55 A, critical for >95 % efficiency in high-current SMPS.
I_D(DC)	±110 A - Supports continuous output currents up to 110 A in paralleled or high-duty-cycle motor drive phases.
E_AS	397 mJ - Withstands single inductive switching events up to 30 V × 63 A × 210 ns without failure, enhancing system ruggedness.
Q_G	250 nC - Determines gate driver power requirement (~2.5 mW per MHz at 10 V swing); enables 100–200 kHz switching with moderate drivers.
C_iss	16800 pF - Dominates input capacitance; impacts gate drive loop stability and Miller effect during high dv/dt transitions.
T_ch max	150 °C - Allows sustained operation at elevated case temperatures when paired with adequate heatsinking per derating curve.

Pinout & Package

2SK3812-ZP-E1-AZ uses the TO-263 (MP-25ZP) surface-mount package with exposed drain tab for thermal and electrical connection. Package dimensions: 15.25 mm × 10.0 mm × 4.45 mm (L × W × H), 3 main terminals + integral fin (drain).

Pin/Terminal	Circuit Role	Design Meaning
1. Gate	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ESD-safe handling due to thin gate oxide.
2. Drain	High-side current path	Connected to PCB copper pour for heat dissipation and low-inductance high-current return; electrically tied to fin.
3. Source	Reference node / current return	Serves as local ground reference for gate drive; must be routed with minimal inductance to avoid shoot-through in bridge circuits.
4. Fin (Drain)	Thermal & electrical extension	Exposed metal pad soldered directly to PCB thermal plane; provides primary thermal path (R_th(ch-C) = 0.587 °C/W) and low-impedance drain connection.

Key Features

Feature	Design Value
Super low R_DS(on) at 4.5 V	R_DS(on)2 = 3.7 mΩ max enables direct drive from 5 V microcontrollers or PWM ICs without level-shifting.
High avalanche ruggedness	397 mJ single-pulse and 63 A repetitive avalanche rating allow reliable operation in inductive switching without external snubbers.
Fast body diode recovery	trr = 53 ns and Q_rr = 74 nC reduce switching losses and voltage spikes during commutation in half-bridge freewheeling.
Optimized gate charge profile	Q_GD/Q_GS ratio of ~1.6 improves immunity to dv/dt-induced false turn-on in high-side configurations.
TO-263 thermal performance	0.587 °C/W junction-to-case resistance supports >150 W continuous power dissipation with 2 oz copper and 2 thermal vias.

Applications

Industrial DC-DC Converters	Brushless DC Motor Drives
Use Scenario: Primary-side switch in isolated 48 V input → 12 V/24 V output telecom and server PSUs operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-side power switch in active-clamp forward or LLC resonant topology; handles full input current with minimal conduction loss. Use Value: 2.8 mΩ R_DS(on) reduces conduction loss by >40 % vs. comparable 5 mΩ MOSFETs, improving full-load efficiency from 93.2 % to 94.7 %.	Use Scenario: Upper-leg switch in three-phase inverter driving 5–10 kW BLDC motors in CNC spindles and automated conveyors. IC Role / Device Role / Timing Role: High-current, high-dv/dt switching element in 6-step commutation; synchronized with complementary low-side FETs. Use Value: 63 A repetitive avalanche rating tolerates back-EMF transients during sudden load changes, eliminating need for external clamping diodes.
Uninterruptible Power Supplies	Electric Vehicle Onboard Chargers
Use Scenario: Bidirectional buck-boost stage in line-interactive UPS managing battery charge/discharge and AC bypass paths. IC Role / Device Role / Timing Role: Synchronous rectifier and power switch in dual-active-bridge configuration; conducts bidirectional 80 A peak current. Use Value: Low Q_rr (74 nC) and fast trr (53 ns) minimize reverse recovery loss during polarity reversal, reducing thermal stress on heatsink by 18 °C.	Use Scenario: Isolation-stage primary switch in 3.3 kW OBC converting AC grid to 400 V DC battery bus using phase-shifted full-bridge. IC Role / Device Role / Timing Role: Hard-switched power transistor subjected to 600 V peak voltage stress and 110 A RMS current in burst-mode operation. Use Value: 150 °C T_ch rating and 0.587 °C/W R_th(ch-C) enable stable 3.3 kW operation with passive cooling, avoiding fan noise and reliability risk.

Industrial DC-DC Converters

Brushless DC Motor Drives

Use Scenario: Primary-side switch in isolated 48 V input → 12 V/24 V output telecom and server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side power switch in active-clamp forward or LLC resonant topology; handles full input current with minimal conduction loss.

Use Value: 2.8 mΩ R_DS(on) reduces conduction loss by >40 % vs. comparable 5 mΩ MOSFETs, improving full-load efficiency from 93.2 % to 94.7 %.

Use Scenario: Upper-leg switch in three-phase inverter driving 5–10 kW BLDC motors in CNC spindles and automated conveyors.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switching element in 6-step commutation; synchronized with complementary low-side FETs.

Use Value: 63 A repetitive avalanche rating tolerates back-EMF transients during sudden load changes, eliminating need for external clamping diodes.

Uninterruptible Power Supplies

Electric Vehicle Onboard Chargers

Use Scenario: Bidirectional buck-boost stage in line-interactive UPS managing battery charge/discharge and AC bypass paths.

IC Role / Device Role / Timing Role: Synchronous rectifier and power switch in dual-active-bridge configuration; conducts bidirectional 80 A peak current.

Use Value: Low Q_rr (74 nC) and fast trr (53 ns) minimize reverse recovery loss during polarity reversal, reducing thermal stress on heatsink by 18 °C.

Use Scenario: Isolation-stage primary switch in 3.3 kW OBC converting AC grid to 400 V DC battery bus using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Hard-switched power transistor subjected to 600 V peak voltage stress and 110 A RMS current in burst-mode operation.

Use Value: 150 °C T_ch rating and 0.587 °C/W R_th(ch-C) enable stable 3.3 kW operation with passive cooling, avoiding fan noise and reliability risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH60N60P	600 V V_DSS, 60 A I_D(DC), R_DS(on) = 22 mΩ - higher voltage rating but 8× higher on-resistance.	Designed for 400 V DC-link inverters; unsuitable for 48 V high-current apps due to excessive conduction loss.	Select only if system requires >300 V blocking capability; not drop-in for 2SK3812-ZP-E1-AZ's low-voltage, high-current role.
IRFP4468PbF	60 V V_DSS, 110 A I_D(DC), R_DS(on) = 3.2 mΩ - similar rating but 14 % higher R_DS(on) and no published avalanche energy spec.	Lacks documented E_AS and I_AR; less suitable for inductive loads with unclamped switching stress.	Acceptable where avalanche robustness is secondary; verify layout for higher conduction loss and thermal margin.

Compared with IXFH60N60P and IRFP4468PbF, the 2SK3812-ZP-E1-AZ uniquely combines 60 V/110 A rating, sub-3 mΩ R_DS(on), and guaranteed 397 mJ avalanche energy - making it optimal for space-constrained, high-efficiency 48 V industrial power stages where both conduction loss and transient ruggedness are critical.

Availability

2SK3812-ZP-E1-AZ is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for 2SK3812-ZP-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3812-ZP-E1-AZ belongs to Renesas' legacy high-current power MOSFET product line, engineered specifically for rugged, high-efficiency switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3812-ZP-E1-AZ?

The 2SK3812-ZP-E1-AZ has a rated DC drain current (I_D(DC)) of ±110 A at T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C case temperature per the datasheet's derating curve - at 100°C case temperature, the usable continuous current drops to approximately ±65 A. Real-world design must account for thermal resistance and ambient conditions to maintain safe channel temperature below 150°C.

Does the 2SK3812-ZP-E1-AZ support 4.5 V gate drive in practical applications?

Yes, the 2SK3812-ZP-E1-AZ is fully specified for 4.5 V gate drive: R_DS(on)2 = 3.7 mΩ max at V_GS = 4.5 V and I_D = 55 A. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) ensures strong enhancement-mode behavior well within typical 3.3 V or 5 V logic outputs. However, gate drive strength must deliver ≥250 nC total charge within required switching times to avoid excessive transition losses.

What is the significance of the 397 mJ single avalanche energy rating for the 2SK3812-ZP-E1-AZ?

The 397 mJ single avalanche energy (E_AS) specifies the maximum inductive energy the 2SK3812-ZP-E1-AZ can absorb in one unclamped inductive switching event without failure - tested at V_DD = 30 V, I_AS = 63 A, L = 100 µH, and starting T_ch = 25°C. This rating validates robustness against transformer leakage inductance spikes or motor winding flyback in hard-switched topologies, reducing need for external protection components.

How does the body diode performance of the 2SK3812-ZP-E1-AZ impact half-bridge designs?

The 2SK3812-ZP-E1-AZ body diode exhibits VF(S-D) = 0.87–1.5 V at 110 A and trr = 53 ns, with Q_rr = 74 nC. In half-bridge freewheeling, this enables low forward loss during dead-time conduction but demands careful dead-time optimization: too short causes shoot-through; too long increases conduction loss. Its fast, soft recovery minimizes voltage overshoot and EMI compared to slower diodes.

Is the 2SK3812-ZP-E1-AZ RoHS compliant and lead-free?

Yes, the 2SK3812-ZP-E1-AZ is RoHS compliant and lead-free. Per Renesas documentation and packaging markings (including the "-E1-AZ" suffix), it meets EU Directive 2011/65/EU requirements. The device uses matte tin plating on leads and Pb-free solder-compatible terminations. No exemptions apply, and full material declarations are available through Renesas' compliance portal upon request.

2SK3812-ZP-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 213W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

2SK3812-ZP-E1-AZ FAQ

1.How can I place an order for 2SK3812-ZP-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3812-ZP-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3812-ZP-E1-AZ reliable?

The price and inventory of 2SK3812-ZP-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3812-ZP-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3812-ZP-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3812-ZP-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3812-ZP-E1-AZ?

2SK3812-ZP-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3812-ZP-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3812-ZP-E1-AZ?

For technical support, including 2SK3812-ZP-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3812-ZP-E1-AZ requirements.

6.How does Aetrix verify that 2SK3812-ZP-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3812-ZP-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3812-ZP-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3812-ZP-E1-AZ?

All 2SK3812-ZP-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3812-ZP-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3812-ZP-E1-AZ part is unused and in its original packaging.

Return procedure for 2SK3812-ZP-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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