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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3814-AZ

Name: 2SK3814-AZ
Brand: Renesas
SKU: 2SK3814-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3814-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SK3814-AZ.pdf

Description:: MOSFET N-CH 60V 60A TO251

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Product details

Overview

2SK3814-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridge legs, and industrial SMPS applications. It delivers R_DS(on)1 = 8.7 mΩ max at V_GS = 10 V / I_D = 30 A, supports ±240 A pulsed drain current, and features low C_iss = 5450 pF typical for fast switching with reduced gate drive loss.

For engineers reviewing the 2SK3814-AZ datasheet, 2SK3814-AZ pinout, 2SK3814-AZ application, or 2SK3814-AZ equivalent, this device is selected for high-efficiency 48 V input power stages requiring robust avalanche capability (E_AS = 102 mJ), tight thermal resistance (R_th(ch-C) = 1.49 °C/W), and stable operation up to T_ch = 150 °C in TO-251 (MP-3) package.

Technical Context

The 2SK3814-AZ employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage V_GS(off) ranges 1.5–2.5 V, enabling reliable turn-on with standard 4.5 V logic-level drivers while maintaining low leakage (I_DSS ≤ 10 μA at V_DS = 60 V).

It integrates a body diode with VF(S-D) = 0.95–1.5 V at I_F = 60 A and t_rr = 36 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. Avalanche ruggedness is validated per single-pulse test conditions (V_DD = 30 V, L = 100 μH, R_G = 25 Ω), confirming suitability for inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for 48 V bus systems with 20 % margin against transients.
R_DS(on)1	8.7 mΩ max at V_GS = 10 V / I_D = 30 A - Enables <1.5 W conduction loss at 30 A DC, reducing heatsink requirements.
I_D(DC)	±60 A at T_C = 25 °C - Supports continuous output currents up to 60 A in properly heatsinked PCB layouts.
E_AS	102 mJ - Withstands single inductive energy spikes without failure, eliminating need for external clamping in many motor drives.
C_iss	5450 pF typical at V_DS = 10 V - Low input capacitance enables fast turn-on with moderate gate drive strength (Q_G = 95 nC).
t_r/t_f	8.5 ns / 7.7 ns - Enables high-frequency switching (>200 kHz) with minimal overlap loss in hard-switched converters.
T_ch max	150 °C - Allows operation in sealed enclosures or high ambient environments when derated per datasheet curves.

Pinout & Package

2SK3814-AZ is housed in TO-251 (MP-3) package: 3-pin, surface-mount compatible with through-hole footprint, featuring exposed drain fin for direct thermal coupling to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires ≤ ±20 V rating and low-impedance path to minimize ringing and ensure clean switching.
2 (Drain)	Main current output terminal	Connected to high-side switch node or inductive load; electrically tied to metal fin for thermal and electrical conduction to heatsink.
3 (Source)	Reference and return path	Serves as power ground reference for gate driver; must be low-inductance connection to minimize V_GS noise during switching.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	R_DS(on)2 = 10.5 mΩ max enables use with 5 V microcontroller GPIOs without level-shifting.
High avalanche energy rating	102 mJ single-pulse E_AS allows safe operation in unclamped inductive switching without external protection.
Fast switching with low Q_G	95 nC total gate charge supports efficient 200–500 kHz PWM operation with standard gate drivers (e.g., TC4420).
Robust body diode	36 ns reverse recovery time and 40 nC Q_rr reduce shoot-through risk and losses in half-bridge freewheeling paths.
Thermal performance	R_th(ch-C) = 1.49 °C/W enables >60 W dissipation with modest heatsinking, critical for compact industrial power supplies.

Applications

Industrial DC-DC Converters	Brushless DC Motor Drives
Use Scenario: Primary-side switch in isolated 48 V input → 12 V/24 V output flyback or forward converters for factory automation controllers. IC Role / Device Role / Timing Role: High-side power switch handling 30–60 A peak currents at 100–300 kHz, synchronized to controller PWM. Use Value: Low R_DS(on) and fast t_r/t_f reduce conduction and switching losses, improving efficiency from 89 % to 92 % over legacy MOSFETs.	Use Scenario: Upper-leg switch in three-phase inverter driving 1–3 kW BLDC motors in CNC spindles or conveyor systems. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element in half-bridge configuration, commutating motor phase current. Use Value: 102 mJ E_AS withstands back-EMF spikes during abrupt current interruption, eliminating need for external avalanche-rated FETs.
Uninterruptible Power Supplies	Telecom Rectifier Modules
Use Scenario: Battery-charging boost stage in 19-inch rack-mounted UPS units operating from 36–60 V DC input. IC Role / Device Role / Timing Role: Synchronous rectifier or main switching transistor in interleaved PFC + LLC topology. Use Value: C_iss = 5450 pF and Q_G = 95 nC allow stable gate drive with low-power controllers, minimizing driver IC count and BOM cost.	Use Scenario: Primary switch in -48 V telecom rectifier modules delivering up to 2.5 kW output with forced-air cooling. IC Role / Device Role / Timing Role: Main power switch in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: TO-251 package with exposed drain fin provides direct thermal path to chassis, enabling 84 W power dissipation at T_C = 25 °C without oversized heatsinks.

Industrial DC-DC Converters

Brushless DC Motor Drives

Use Scenario: Primary-side switch in isolated 48 V input → 12 V/24 V output flyback or forward converters for factory automation controllers.

IC Role / Device Role / Timing Role: High-side power switch handling 30–60 A peak currents at 100–300 kHz, synchronized to controller PWM.

Use Value: Low R_DS(on) and fast t_r/t_f reduce conduction and switching losses, improving efficiency from 89 % to 92 % over legacy MOSFETs.

Use Scenario: Upper-leg switch in three-phase inverter driving 1–3 kW BLDC motors in CNC spindles or conveyor systems.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element in half-bridge configuration, commutating motor phase current.

Use Value: 102 mJ E_AS withstands back-EMF spikes during abrupt current interruption, eliminating need for external avalanche-rated FETs.

Uninterruptible Power Supplies

Telecom Rectifier Modules

Use Scenario: Battery-charging boost stage in 19-inch rack-mounted UPS units operating from 36–60 V DC input.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching transistor in interleaved PFC + LLC topology.

Use Value: C_iss = 5450 pF and Q_G = 95 nC allow stable gate drive with low-power controllers, minimizing driver IC count and BOM cost.

Use Scenario: Primary switch in -48 V telecom rectifier modules delivering up to 2.5 kW output with forced-air cooling.

IC Role / Device Role / Timing Role: Main power switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: TO-251 package with exposed drain fin provides direct thermal path to chassis, enabling 84 W power dissipation at T_C = 25 °C without oversized heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH60N60P	600 V V_DSS, higher R_DS(on) = 22 mΩ, TO-247 package	Designed for 400 V+ PFC stages; unsuitable for 48 V systems due to excessive conduction loss	Select only if higher voltage rating is required; not drop-in for 2SK3814-AZ's 60 V use case.
IRF1404ZPBF	40 V V_DSS, R_DS(on) = 4.7 mΩ, TO-220 package, no specified E_AS	Lacks avalanche rating; requires external clamping in inductive loads; incompatible with 48 V bus transients	Acceptable only in low-voltage (<36 V), non-inductive applications where avalanche immunity is not needed.

Compared with IXFH60N60P and IRF1404ZPBF, the 2SK3814-AZ uniquely balances 60 V rating, ultra-low on-resistance, verified avalanche ruggedness, and TO-251 thermal performance-making it optimal for space-constrained, high-reliability 48 V industrial power stages.

Availability

2SK3814-AZ is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 2SK3814-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK3814-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-current, high-reliability switching in industrial power conversion systems where thermal robustness and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK3814-AZ?

The 2SK3814-AZ has a maximum continuous drain current I_D(DC) of ±60 A at case temperature T_C = 25 °C. This rating assumes adequate heatsinking; derating is required above 25 °C per the datasheet's PT vs. TC curve. At T_C = 100 °C, the usable DC current drops to approximately 35 A. The 2SK3814-AZ must be mounted on a thermally optimized PCB or heatsink to sustain its rated current.

Does the 2SK3814-AZ support logic-level gate drive?

Yes, the 2SK3814-AZ supports logic-level gate drive: its R_DS(on)2 is guaranteed ≤ 10.5 mΩ at V_GS = 4.5 V and I_D = 30 A. This allows direct interfacing with 5 V microcontrollers or gate drivers without level-shifting circuitry. However, full performance (R_DS(on)1 = 8.7 mΩ) is achieved at V_GS = 10 V, so 10 V drive is recommended for minimum conduction loss in high-efficiency designs using the 2SK3814-AZ.

What is the avalanche energy rating of the 2SK3814-AZ and how is it tested?

The 2SK3814-AZ is rated for single-pulse avalanche energy E_AS = 102 mJ, measured under standardized conditions: V_DD = 30 V, L = 100 μH, R_G = 25 Ω, starting channel temperature T_ch = 25 °C, and gate drive transition from 20 V to 0 V. This rating confirms the device can safely absorb inductive energy spikes common in motor drive and relay switching-without requiring external snubbers-making the 2SK3814-AZ especially valuable in ruggedized industrial applications.

Is the 2SK3814-AZ RoHS compliant?

Yes, the 2SK3814-AZ complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. For full material declarations and substance reporting, refer to Renesas' official product environmental data sheet for the 2SK3814-AZ.

What is the thermal resistance from channel to case (R_th(ch-C)) for the 2SK3814-AZ?

The 2SK3814-AZ has a channel-to-case thermal resistance R_th(ch-C) of 1.49 °C/W, measured under JEDEC JESD51-14 conditions. This low value results from its TO-251 (MP-3) package with exposed drain fin, which provides a direct thermal path from silicon die to heatsink or PCB copper. When designing thermal management for the 2SK3814-AZ, this parameter must be used with case-to-ambient resistance to calculate total junction temperature rise under load.

2SK3814-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 5450 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta), 84W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

2SK3814-AZ FAQ

1.How can I place an order for 2SK3814-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3814-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3814-AZ reliable?

The price and inventory of 2SK3814-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3814-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3814-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3814-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3814-AZ?

2SK3814-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3814-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3814-AZ?

For technical support, including 2SK3814-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3814-AZ requirements.

6.How does Aetrix verify that 2SK3814-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3814-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3814-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3814-AZ?

All 2SK3814-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3814-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3814-AZ part is unused and in its original packaging.

Return procedure for 2SK3814-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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