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Renesas 2SK3814-Z-E1-AZ
- Part No.:
- 2SK3814-Z-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SK3814-Z-E1-AZ.pdf
- Description:
- MP-3 AL
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
2SK3814-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive half-bridge legs, featuring RDS(on)1 = 8.7 mΩ max at VGS = 10 V / ID = 30 A, VDSS = 60 V, and ID(DC) = ±60 A at TC = 25°C.
For engineers reviewing the 2SK3814-Z-E1-AZ datasheet, 2SK3814-Z-E1-AZ pinout, 2SK3814-Z-E1-AZ application, or 2SK3814-Z-E1-AZ equivalent, this device is selected for high-efficiency 48 V input industrial power supplies, brushed DC motor H-bridge drivers, and repetitive avalanche-tolerant load switch designs requiring low conduction loss and fast switching with QG = 95 nC.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low RDS(on) and controlled gate charge distribution. Its 5450 pF Ciss and 350 pF Crss support stable operation in hard-switched topologies up to 200 kHz with minimal Miller-induced shoot-through risk.
Rated for single avalanche energy EAS = 102 mJ and repetitive avalanche current IAR = 32 A, it sustains inductive turn-off stress without external snubbers in motor control and solenoid drive circuits where VDS spikes exceed 60 V during commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage; defines usable input range in 48 V bus systems with 20% transient margin. |
| RDS(on)1 | 8.7 mΩ max - Conduction loss of ≤7.8 W at 30 A DC, enabling compact heatsink design in high-current switch nodes. |
| ID(DC) | ±60 A at TC = 25°C - Sustained current capability matching 1 kW–1.5 kW power stage requirements with forced-air cooling. |
| QG | 95 nC - Total gate charge determining driver strength requirement; compatible with standard 2 A peak gate drivers. |
| EAS | 102 mJ - Single-pulse avalanche energy tolerance allowing safe operation during inductive load turn-off without clamping diodes. |
| Ciss | 5450 pF typ - Input capacitance defining gate drive loop stability and required gate resistor value for controlled dV/dt. |
| tr/tf | 8.5 ns / 7.7 ns - Fast rise/fall times enabling high-frequency PWM operation while minimizing switching loss. |
Pinout & Package
2SK3814-Z-E1-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 mm × 5.0 mm × 1.6 mm and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 0–20 V logic-level or PWM signal; requires 95 nC charge for full enhancement; sensitive to ESD per Renesas handling guidelines. |
| 2 (Drain) | High-side current path | Connected to input bus or inductive load; electrically tied to exposed metal tab for thermal conduction and low-inductance PCB layout. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; must be routed with low inductance to minimize VGS ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 8.7 mΩ max at 10 V gate drive enables >96% efficiency in 30 A synchronous rectifier replacement applications. |
| Low Ciss/Crss ratio | Ciss = 5450 pF / Crss = 350 pF yields 15.6:1 ratio, reducing Miller feedback and improving noise immunity in high-dV/dt environments. |
| Body diode performance | VF(S-D) = 0.95–1.5 V at 60 A supports freewheeling in half-bridge configurations without external Schottky diodes. |
| Avalanche ruggedness | 102 mJ single-pulse and 32 A repetitive avalanche rating allow reliable operation in unclamped inductive switching without derating. |
| TO-252 thermal design | θch-C = 1.49°C/W enables 84 W dissipation at TC = 25°C - critical for space-constrained industrial motor drives. |
Applications
| Industrial DC-DC Converters | Brushed DC Motor Drivers |
|---|---|
|
Use Scenario: Primary-side switch in isolated 48 V input → 12 V output flyback converters for factory automation PLCs. IC Role / Device Role / Timing Role: High-side power switch operating at 100–150 kHz with 50% duty cycle; handles 30 A peak primary current. Use Value: 8.7 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 13 mΩ MOSFETs, lowering thermal stress on PCB-mounted magnetics. |
Use Scenario: Low-side switch in H-bridge for 24–48 V brushed DC motors driving conveyor belts or robotic joints. IC Role / Device Role / Timing Role: Synchronous freewheeling switch with body diode reverse recovery trr = 36 ns enabling clean current commutation. Use Value: 102 mJ avalanche energy absorbs inductive kickback during rapid direction reversal, eliminating need for external TVS clamps. |
| High-Current Load Switches | UPS Inverter Stages |
|
Use Scenario: Solid-state replacement for mechanical contactors in 48 V battery backup systems delivering up to 60 A continuous load current. IC Role / Device Role / Timing Role: Unidirectional power switch controlled via microcontroller GPIO with soft-start gate ramping. Use Value: RDS(on)2 = 10.5 mΩ at 4.5 V gate drive ensures full enhancement from standard 5 V logic, simplifying driver circuitry. |
Use Scenario: Half-bridge leg in 1 kVA online UPS inverter converting 48 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Fast-switching power transistor with tr/tf < 9 ns supporting 20 kHz SPWM with minimal dead-time distortion. Use Value: 95 nC QG allows use of cost-effective dual 2 A gate drivers instead of higher-current alternatives, reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP50N055T | RDS(on) = 5.5 mΩ @ 10 V but VDSS = 55 V; TO-220 package; higher Ciss = 6200 pF. | Limited to ≤55 V systems; unsuitable for 60 V surge conditions; through-hole mounting increases layout inductance. | Select when lower RDS(on) justifies reduced voltage margin and through-hole assembly. |
| IRF1405PBF | RDS(on) = 5.3 mΩ @ 10 V; VDSS = 55 V; TO-220; no specified avalanche rating. | No documented EAS or IAR; requires external clamping for inductive loads; higher thermal resistance θJA = 62°C/W. | Choose only for non-avalanche, low-voltage (<50 V), low-frequency (<50 kHz) linear switching applications. |
Compared with IXTP50N055T and IRF1405PBF, the 2SK3814-Z-E1-AZ provides superior 60 V voltage margin, verified 102 mJ avalanche capability, and surface-mount TO-252 packaging-making it uniquely suitable for compact, high-reliability industrial motor and power supply designs where both voltage headroom and ruggedness are mandatory.
Availability
2SK3814-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor drivers, and high-current load switches requiring stable component supply across multi-year production cycles.
Supply support for 2SK3814-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.
The 2SK3814-Z-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting high-efficiency, high-reliability switching in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for the 2SK3814-Z-E1-AZ at case temperature 100°C?
The 2SK3814-Z-E1-AZ has a DC drain current rating of ±60 A at TC = 25°C. Derating follows the published curve: at TC = 100°C, the maximum allowable ID(DC) is approximately ±36 A, based on linear interpolation of the total power dissipation limit and RDS(on) temperature coefficient. This value must be validated against actual board-level thermal performance using θch-C = 1.49°C/W.
Does the 2SK3814-Z-E1-AZ support logic-level gate drive at 4.5 V?
Yes, the 2SK3814-Z-E1-AZ is fully characterized for logic-level operation: RDS(on)2 = 10.5 mΩ max at VGS = 4.5 V and ID = 30 A. Its gate threshold voltage VGS(off) ranges from 1.5 V to 2.5 V, ensuring robust turn-on with standard 5 V microcontroller outputs without level-shifting circuitry.
What is the body diode forward voltage specification for the 2SK3814-Z-E1-AZ under rated current?
The body diode forward voltage VF(S-D) of the 2SK3814-Z-E1-AZ is specified as 0.95 V min to 1.5 V max at IF = 60 A and VGS = 0 V. This low VF enables efficient freewheeling in half-bridge and synchronous rectifier topologies without requiring external Schottky diodes.
Can the 2SK3814-Z-E1-AZ be used in avalanche mode for repetitive inductive switching?
Yes, the 2SK3814-Z-E1-AZ is rated for repetitive avalanche operation with IAR = 32 A and EAR = 102 mJ under defined conditions (Tch(peak) ≤ 150°C, RG = 25 Ω). This makes it suitable for unclamped inductive switching in motor phase-legs and solenoid drivers where external snubbers are undesirable.
What is the gate-to-source voltage limit for the 2SK3814-Z-E1-AZ, and what happens if exceeded?
The absolute maximum gate-to-source voltage VGSS for the 2SK3814-Z-E1-AZ is ±20 V. Exceeding this rating risks permanent gate oxide breakdown, resulting in increased IGSS, degraded VGS(off), or catastrophic short-circuit failure. Gate drive circuits must include clamping (e.g., Zener diodes) to ensure VGS remains within this limit during transients.
2SK3814-Z-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Strip
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 84W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (MP-3Z)
2SK3814-Z-E1-AZ FAQ
1.How can I place an order for 2SK3814-Z-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3814-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3814-Z-E1-AZ reliable?
The price and inventory of 2SK3814-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3814-Z-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3814-Z-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3814-Z-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3814-Z-E1-AZ?
2SK3814-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3814-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3814-Z-E1-AZ?
For technical support, including 2SK3814-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3814-Z-E1-AZ requirements.
6.How does Aetrix verify that 2SK3814-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3814-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3814-Z-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3814-Z-E1-AZ?
All 2SK3814-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3814-Z-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3814-Z-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3814-Z-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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