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Renesas 2SK3900-ZP-E1-AZ
- Part No.:
- 2SK3900-ZP-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3900-ZP-E1-AZ.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
- Payment:
- Shipping:
Inventory:2,700
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Product details
Overview
2SK3900-ZP-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs. It delivers RDS(on) = 8.0 mΩ max at VGS = 10 V / ID = 41 A, supports ±246 A pulsed drain current, and features integrated gate protection diode in TO-263 (MP-25ZP) package.
For engineers reviewing the 2SK3900-ZP-E1-AZ datasheet, 2SK3900-ZP-E1-AZ pinout, 2SK3900-ZP-E1-AZ application, or 2SK3900-ZP-E1-AZ equivalent, key selection criteria include avalanche energy rating (EAS = 141 mJ), low Ciss (3500 pF typ.), and dual-threshold RDS(on) specification at both 10 V and 4.5 V gate drive - critical for 12 V and 5 V logic-level gate driver compatibility.
Technical Context
This device employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (QG = 65.5 nC, QGD = 16.5 nC) enables efficient operation at 100–500 kHz in synchronous buck converters and half-bridge inverters.
The built-in gate-source ESD protection diode (rated ±20 V) reduces external clamping requirements, while the body diode's trr = 41 ns and Qrr = 61 nC support moderate-frequency freewheeling in non-synchronous configurations without excessive switching loss penalty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 48 V nominal bus systems with 20 % transient margin per IEC 61000-4-5. |
| RDS(on)1 | 8.0 mΩ max @ VGS = 10 V, ID = 41 A - Enables ≤2.7 W conduction loss at 60 A continuous drain current. |
| RDS(on)2 | 10 mΩ max @ VGS = 4.5 V, ID = 41 A - Ensures usable on-resistance with standard 5 V microcontroller GPIO or logic-level drivers. |
| EAS | 141 mJ - Withstands single inductive turn-off events up to L·I²/2 = 141 mJ (e.g., 100 µH × 53 A²) without failure. |
| Ciss | 3500 pF typ. - Limits gate drive power requirement to ~1.3 mW at 500 kHz with 10 V swing (P = f·QG·V). |
| tr/tf | 11 ns / 5.5 ns - Supports <50 ns minimum off-time in high-frequency PWM control without shoot-through risk. |
| VF(S-D) | 0.95–1.5 V @ IF = 82 A - Provides low-loss reverse conduction path during dead-time in bridge configurations. |
Pinout & Package
2SK3900-ZP-E1-AZ uses the TO-263 (MP-25ZP) surface-mount package with exposed drain tab (pin 4) for thermal and electrical connection. The package measures 15.25 mm × 10.0 mm × 4.45 mm and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal; requires ≤16.5 nC gate-to-drain charge to fully turn on; protected by internal Zener diode. |
| 2 (Drain) | Main current output | Connected to high-side switch node or DC bus; electrically tied to metal tab (pin 4) for low-inductance, high-current return path. |
| 3 (Source) | Reference terminal | Serves as return path for load current and gate drive reference; must be routed with low inductance to minimize switching noise coupling. |
| 4 (Fin/Drain) | Thermal & power pad | Exposed copper tab soldered to PCB ground plane or heatsink; provides primary thermal path (Rth(ch-C) = 1.2 °C/W) and carries full drain current. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 10 mΩ max enables direct drive from 5 V logic without level-shifting, reducing BOM count in cost-sensitive industrial controls. |
| High single-pulse avalanche capability | 141 mJ rating allows robust operation under inductive load interruption without external snubbers in motor gate drivers. |
| Low output capacitance (Coss) | 660 pF typ. minimizes turn-off energy loss (Eoff ∝ VDS²·Coss) in hard-switched SMPS above 200 kHz. |
| Fast body diode recovery | 41 ns trr and 61 nC Qrr reduce cross-conduction losses and EMI in non-synchronous rectification stages. |
| Integrated gate ESD protection | Built-in gate-source Zener diode withstands ±20 V transients, lowering system-level ESD design complexity in factory automation interfaces. |
Applications
| DC-DC Converter Primary Switch | Brushless DC Motor Inverter Leg |
|---|---|
Use Scenario: High-efficiency 48 V input, 12 V output synchronous buck converter in telecom power shelf. IC Role / Device Role / Timing Role: Main high-side switching element operating at 300 kHz with 10 V gate drive from dedicated controller IC. Use Value: 8.0 mΩ RDS(on) limits conduction loss to <1.2 W at 40 A, enabling >95 % efficiency without forced air cooling. | Use Scenario: Upper-leg switch in three-phase BLDC inverter for HVAC compressor drive (0–15 kHz PWM). IC Role / Device Role / Timing Role: High-current, high-dV/dt switching device in 60 V bus system with bootstrap gate drive. Use Value: 141 mJ avalanche rating absorbs inductive kickback during commutation faults, eliminating need for external clamps. |
| Industrial Power Supply Output Stage | UPS Inverter Half-Bridge |
Use Scenario: Secondary-side synchronous rectifier in 2 kW server PSU with 12 V output rail. IC Role / Device Role / Timing Role: Low-VGS threshold N-MOSFET used as active rectifier controlled by dedicated SR controller. Use Value: 10 mΩ RDS(on) at 4.5 V ensures full enhancement with 5 V gate drive, improving light-load efficiency over Schottky solutions. | Use Scenario: High-side switch in 48 V DC input to 230 V AC line-frequency inverter for small UPS units. IC Role / Device Role / Timing Role: Fast-switching power stage component handling bidirectional current in modified sine-wave topology. Use Value: 5.5 ns fall time and 62 ns turn-off delay enable precise dead-time control to prevent shoot-through at 50 Hz fundamental with high dv/dt edges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4 mΩ @ 10 V but no 4.5 V spec; Ciss = 3200 pF; TO-220 package. | Higher thermal resistance (Rth(j-c) = 1.5 °C/W vs. 1.2 °C/W); unsuitable for space-constrained SMT designs. | Select when board layout permits through-hole mounting and gate drive exceeds 10 V. |
| STP80NF55-08 | RDS(on) = 8.5 mΩ @ 10 V; QG = 120 nC; no specified 4.5 V RDS(on); TO-220FP package. | Slower switching (tf = 25 ns) increases switching loss above 100 kHz; lacks avalanche rating documentation. | Prefer for lower-frequency (<100 kHz), high-current linear regulator bypass applications where gate drive is stable. |
Compared with IRF1404PBF and STP80NF55-08, the 2SK3900-ZP-E1-AZ offers superior 4.5 V drive capability and lower thermal resistance in surface-mount form - making it optimal for compact, high-frequency, logic-level-driven power stages where layout density and efficiency at partial load are critical.
Availability
2SK3900-ZP-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for 2SK3900-ZP-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial and automotive markets.
The 2SK3900-ZP-E1-AZ belongs to Renesas' legacy high-current discrete MOSFET product line, engineered specifically for ruggedized switching in industrial power conversion and motor control systems operating up to 60 V bus voltage.
FAQ
What is the maximum continuous drain current rating for the 2SK3900-ZP-E1-AZ at 25°C case temperature?
The 2SK3900-ZP-E1-AZ has a maximum continuous drain current (ID(DC)) rating of ±82 A at TC = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes ideal heatsinking and is derated linearly above 25°C case temperature per the published derating curve - at 100°C case, the usable ID(DC) drops to approximately 45 A. Always verify thermal design margins using Rth(ch-C) = 1.2 °C/W and actual board-level thermal resistance.
Does the 2SK3900-ZP-E1-AZ have a documented avalanche rating, and how is it tested?
Yes, the 2SK3900-ZP-E1-AZ specifies a single-pulse avalanche energy (EAS) of 141 mJ, measured under defined conditions: VDD = 30 V, starting channel temperature = 25°C, L = 100 µH, RG = 25 Ω, and VGS transition from 20 V to 0 V. This rating validates its ability to absorb inductive energy during unclamped inductive switching events - a key reliability parameter for motor drive and relay driving applications where the 2SK3900-ZP-E1-AZ is commonly deployed.
Can the 2SK3900-ZP-E1-AZ be driven directly by a 5 V microcontroller GPIO without a gate driver?
The 2SK3900-ZP-E1-AZ supports gate drive down to 4.5 V, with RDS(on)2 = 10 mΩ max at VGS = 4.5 V and ID = 41 A - confirming functional enhancement at 5 V logic levels. However, its total gate charge (QG = 65.5 nC) requires ≥10 mA peak drive current for sub-100 ns turn-on. Most microcontroller GPIOs cannot sustain this; thus, while *electrically possible*, reliable high-speed switching demands a dedicated gate driver IC or buffer stage to avoid slow transitions and shoot-through risk in bridge configurations using the 2SK3900-ZP-E1-AZ.
What is the role of the internal gate protection diode in the 2SK3900-ZP-E1-AZ?
The internal gate-source Zener diode in the 2SK3900-ZP-E1-AZ protects against electrostatic discharge (ESD) and gate overvoltage transients up to ±20 V, as stated in the Absolute Maximum Ratings. It clamps gate voltage during handling or system-level ESD events. However, the datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied" - meaning this diode is not intended for sustained overvoltage or repetitive surge suppression; it serves only as a first-line ESD safeguard during assembly and low-energy transients, not as a system-level clamp for the 2SK3900-ZP-E1-AZ in final application.
Is the 2SK3900-ZP-E1-AZ RoHS compliant and what is its quality grade?
Yes, the 2SK3900-ZP-E1-AZ is RoHS compliant, as confirmed by Renesas' environmental compliance documentation and material declarations. Its quality grade is "Standard", per Renesas' classification system - meaning it is qualified for use in computers, office equipment, communications gear, industrial robots, and home appliances, but not for automotive safety-critical, medical life-support, or aerospace applications unless separately qualified and approved in writing by Renesas Electronics. This applies to all standard 2SK3900 variants including the 2SK3900-ZP-E1-AZ.
2SK3900-ZP-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3900-ZP-E1-AZ FAQ
1.How can I place an order for 2SK3900-ZP-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3900-ZP-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3900-ZP-E1-AZ reliable?
The price and inventory of 2SK3900-ZP-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3900-ZP-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3900-ZP-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3900-ZP-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3900-ZP-E1-AZ?
2SK3900-ZP-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3900-ZP-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3900-ZP-E1-AZ?
For technical support, including 2SK3900-ZP-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3900-ZP-E1-AZ requirements.
6.How does Aetrix verify that 2SK3900-ZP-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3900-ZP-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3900-ZP-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3900-ZP-E1-AZ?
All 2SK3900-ZP-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3900-ZP-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3900-ZP-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3900-ZP-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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