Renesas 2SK3902-ZK-E1-AY

Overview

2SK3902-ZK-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on) = 21 mΩ max at V_GS = 10 V / I_D = 15 A, supports ±30 A DC drain current, and features built-in gate protection diode for ESD robustness. Its TO-263 (MP-25ZK) package enables high thermal performance in compact board layouts.

For engineers reviewing the 2SK3902-ZK-E1-AY datasheet, 2SK3902-ZK-E1-AY pinout, 2SK3902-ZK-E1-AY application, or 2SK3902-ZK-E1-AY equivalent, key selection criteria include avalanche energy rating (E_AS = 40 mJ), low C_iss (1200 pF typ.), and dual R_DS(on) specs at 10 V and 4.5 V gate drive - critical for 12 V and 5 V logic-compatible gate drivers in high-efficiency SMPS designs.

Technical Context

This device operates as a unidirectional high-side or low-side switch with integrated body diode and gate ESD protection. Its channel temperature limit of 150°C and R_th(ch–C) = 2.78°C/W enable sustained 30 A conduction when mounted on adequately sized copper planes. The 40 mJ single-pulse avalanche rating allows safe operation under inductive turn-off stress without external snubbers in flyback or half-bridge topologies.

Switching performance is optimized for hard-switched applications: t_d(on) = 10 ns, t_r = 4 ns, t_d(off) = 37 ns, and t_f = 4 ns at V_DD = 30 V / I_D = 15 A. Total gate charge Q_G = 25 nC at V_DD = 48 V ensures fast, low-loss transitions with standard gate drivers while maintaining controllable dV/dt.

Key Specifications

Pinout & Package

2SK3902-ZK-E1-AY uses the TO-263 (MP-25ZK) surface-mount package with exposed drain tab for enhanced thermal conduction. The 4-pin layout includes Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and Fin/Drain (Pin 4) - where Pin 2 and Pin 4 are internally connected to the same drain metallization and must be soldered to a common thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPBF and STP30NF20, the 2SK3902-ZK-E1-AY offers lower R_DS(on), integrated gate protection, and superior thermal performance in surface-mount layouts - making it optimal for space-constrained, high-efficiency 48 V industrial power stages where reliability under repetitive switching stress is critical.

Availability

2SK3902-ZK-E1-AY is available at Aetrix Electronics and suitable for industrial power supplies, DC motor drives, uninterruptible power systems, and LED constant-current drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SK3902-ZK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3902-ZK-E1-AY belongs to Renesas' legacy power MOSFET product line, engineered for high-current, high-reliability switching in industrial-grade power conversion systems where thermal stability and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for 2SK3902-ZK-E1-AY?

The 2SK3902-ZK-E1-AY is rated for ±30 A DC drain current at case temperature T_C = 25°C. Actual usable current depends on PCB thermal design: with 2 oz copper and adequate copper area under the drain tab, sustained 20–25 A is achievable at T_C ≤ 80°C. Derating curves in the datasheet confirm 15 A at T_C = 100°C.

Does 2SK3902-ZK-E1-AY have built-in gate protection?

Yes, the 2SK3902-ZK-E1-AY integrates a gate-to-source Zener diode for ESD protection, rated per JEDEC JS-001 Class 2 (≥2 kV HBM). This internal protection guards against handling damage but does not replace external gate resistors or TVS diodes in high-noise environments. The datasheet explicitly notes that additional external protection is required if voltages exceeding ±20 V may occur.

Can 2SK3902-ZK-E1-AY be driven directly by a 3.3 V microcontroller?

No - the 2SK3902-ZK-E1-AY has a gate threshold voltage V_GS(off) of 1.5–2.5 V and requires ≥4.5 V for specified R_DS(on) = 26 mΩ max. At 3.3 V gate drive, R_DS(on) rises significantly (>50 mΩ), increasing conduction loss and thermal stress. A level-shifting gate driver or dedicated 5 V/10 V gate supply is required for reliable operation.

What is the avalanche energy rating of 2SK3902-ZK-E1-AY and how is it tested?

The 2SK3902-ZK-E1-AY is rated for 40 mJ single-pulse avalanche energy (E_AS) under defined test conditions: V_DD = 30 V, L = 100 µH, R_G = 25 Ω, V_GS = 20 → 0 V, starting channel temperature = 25°C. This rating validates safe operation during inductive turn-off events in flyback, boost, and half-bridge circuits without external clamping components.

Is 2SK3902-ZK-E1-AY RoHS compliant and what is its quality grade?

Yes, the 2SK3902-ZK-E1-AY meets RoHS Directive 2011/65/EU requirements as confirmed by Renesas' environmental compliance documentation. Its quality grade is "Standard", per Renesas' classification - intended for computers, office equipment, industrial robots, and communications equipment. It is not qualified for automotive, medical life-support, or aerospace applications without explicit written consent from Renesas.