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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3943-ZP-E1-AY

Name: 2SK3943-ZP-E1-AY
Brand: Renesas
SKU: 2SK3943-ZP-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3943-ZP-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: 2SK3943-ZP-E1-AY.pdf

Description:: MOSFET N-CH 40V 82A TO263

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Product details

Overview

2SK3943-ZP-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs. It delivers R_DS(on) = 3.5 mΩ max at V_GS = 10 V / I_D = 41 A, supports ±328 A pulsed drain current, and features integrated body diode with t_rr = 40 ns and Q_rr = 49 nC - enabling efficient synchronous rectification in high-frequency buck converters.

For engineers reviewing the 2SK3943-ZP-E1-AY datasheet, 2SK3943-ZP-E1-AY pinout, 2SK3943-ZP-E1-AY application, or 2SK3943-ZP-E1-AY equivalent, this page provides verified package mapping (TO-263/MP-25ZP), validated avalanche capability (E_AS = 185 mJ), gate charge profile (Q_G = 93 nC), thermal resistance (R_th(ch-C) = 1.2 °C/W), and real-world switching timing (t_d(off) = 69 ns, t_f = 12 ns) critical for hard-switched industrial power designs.

Technical Context

This device uses a planar vertical DMOS structure optimized for low conduction loss and fast unclamped inductive switching. Its gate threshold voltage V_GS(off) ranges from 2.0 V to 3.0 V, ensuring robust turn-on margin under 5.5 V gate drive while maintaining noise immunity. The integrated ESD protection diode between gate and source meets human-body model (HBM) Class 2 requirements but requires external gate clamping in high-dV/dt environments.

Thermal design relies on direct case-to-heatsink mounting via the exposed drain tab (Pin 4), with transient thermal impedance r_th(t) = 1.2 °C/W for steady-state operation and 83.3 °C/W junction-to-ambient. Safe operating area (SOA) is limited by R_DS(on) at high V_DS and pulse-width-dependent power dissipation, validated up to 100 μs single-pulse conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 24 V and 36 V nominal bus systems without derating.
R_DS(on)1	3.5 mΩ max at V_GS = 10 V / I_D = 41 A - Enables <1.5 W conduction loss at 40 A continuous, reducing heatsink size.
Q_G	93 nC - Determines gate driver peak current requirement (~1.9 A for 50 ns rise time with 10 Ω gate resistor).
E_AS	185 mJ - Supports unclamped inductive switching in motor phase-legs without external snubbers under defined test conditions.
t_r/t_f	10 ns / 12 ns - Enables >500 kHz hard-switching in isolated DC-DC topologies with minimal switching loss.
C_iss	5800 pF typ - Impacts gate drive power loss and Miller-induced shoot-through risk in half-bridge configurations.
T_ch max	150 °C - Sets maximum channel temperature limit for SOA derating and lifetime estimation per JEDEC JEP122.

Pinout & Package

2SK3943-ZP-E1-AY is housed in a TO-263 (MP-25ZP) surface-mount package with an exposed drain tab for thermal and electrical connection. The 4-pin configuration places Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and auxiliary Drain Fin (Pin 4) on a 15.25 mm × 10.0 mm footprint with 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Accepts 0–20 V logic-level gate drive; requires external series resistor (typically 5–22 Ω) to damp ringing and limit peak current.
Pin 2 (D)	Main drain electrode	Primary high-side switching node; electrically and thermally connected to Pin 4 (Fin) - must be soldered to PCB copper pour or heatsink.
Pin 3 (S)	Source reference node	Serves as return path for load current and gate drive loop; layout must minimize inductance to prevent false turn-on during dI/dt transients.
Pin 4 (Fin)	Drain thermal/electrical extension	Exposed metal tab providing low-thermal-resistance path (R_th(ch-C) = 1.2 °C/W) to PCB; must be electrically tied to Pin 2 and thermally anchored.

Key Features

Feature	Design Value
Super low R_DS(on)	3.5 mΩ max enables <1.4 W conduction loss at 40 A, reducing thermal stress in compact 48 V telecom PSUs.
Fast body diode recovery	t_rr = 40 ns and Q_rr = 49 nC minimize reverse-recovery losses in synchronous rectifier applications.
High avalanche energy rating	E_AS = 185 mJ allows reliable operation in inductive load switching without external clamping circuits.
Low input capacitance	C_iss = 5800 pF reduces gate drive power consumption and improves switching speed stability across temperature.
Robust gate oxide	±20 V V_GSS rating supports overvoltage tolerance during layout parasitic ringing or supply transients.

Applications

Motor Drive Inverter	DC-DC Converter Primary Switch
Use Scenario: High-power BLDC motor controller for industrial automation requiring 40–80 A phase current at 24–48 V bus. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter leg, driven by isolated gate driver with 10 V gate voltage. Use Value: Low R_DS(on) minimizes conduction loss during 100% duty cycle operation; fast t_f ensures clean turn-off during PWM dead-time control.	Use Scenario: Primary-side switch in 500 W isolated forward converter for server power supply. IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 250 kHz with 40 V input and 12 V output. Use Value: Low C_iss and Q_G reduce gate drive losses; E_AS rating handles leakage inductance spikes without snubber.
Uninterruptible Power Supply (UPS)	Industrial Battery Management System
Use Scenario: Bidirectional DC bus switch in online UPS supporting 3 kVA output with battery backup. IC Role / Device Role / Timing Role: Low-side switch in battery charging path and high-side switch in inverter output stage. Use Value: ±328 A pulsed current rating handles surge loads during transfer switching; body diode conducts reverse current during AC line dropout.	Use Scenario: Cell-balancing FET and main disconnect switch in 48 V lithium-ion battery pack for material handling equipment. IC Role / Device Role / Timing Role: Solid-state contactor replacing mechanical relay for 80 A continuous load interruption. Use Value: 150 °C T_ch rating supports operation in sealed enclosures; avalanche capability prevents failure during sudden load dump events.

Motor Drive Inverter

DC-DC Converter Primary Switch

Use Scenario: High-power BLDC motor controller for industrial automation requiring 40–80 A phase current at 24–48 V bus.

IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter leg, driven by isolated gate driver with 10 V gate voltage.

Use Value: Low R_DS(on) minimizes conduction loss during 100% duty cycle operation; fast t_f ensures clean turn-off during PWM dead-time control.

Use Scenario: Primary-side switch in 500 W isolated forward converter for server power supply.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 250 kHz with 40 V input and 12 V output.

Use Value: Low C_iss and Q_G reduce gate drive losses; E_AS rating handles leakage inductance spikes without snubber.

Uninterruptible Power Supply (UPS)

Industrial Battery Management System

Use Scenario: Bidirectional DC bus switch in online UPS supporting 3 kVA output with battery backup.

IC Role / Device Role / Timing Role: Low-side switch in battery charging path and high-side switch in inverter output stage.

Use Value: ±328 A pulsed current rating handles surge loads during transfer switching; body diode conducts reverse current during AC line dropout.

Use Scenario: Cell-balancing FET and main disconnect switch in 48 V lithium-ion battery pack for material handling equipment.

IC Role / Device Role / Timing Role: Solid-state contactor replacing mechanical relay for 80 A continuous load interruption.

Use Value: 150 °C T_ch rating supports operation in sealed enclosures; avalanche capability prevents failure during sudden load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP40N10P	R_DS(on) = 22 mΩ @ 10 V (6× higher), Q_G = 42 nC (45% lower), TO-220 package	Lower switching loss but significantly higher conduction loss; unsuitable for >20 A continuous operation	Select when gate drive strength is limited and thermal budget allows larger heatsink.
IRF1404ZLPbF	R_DS(on) = 4.7 mΩ @ 10 V (34% higher), C_iss = 3200 pF (45% lower), TO-220AB package	Better high-frequency efficiency but reduced avalanche margin (E_AS = 120 mJ)	Prefer for resonant LLC topologies where C_iss dominates loss, not hard-switched SMPS.

Compared with IXTP40N10P and IRF1404ZLPbF, the 2SK3943-ZP-E1-AY offers the lowest R_DS(on) in its class for high-current DC-DC and motor drive use cases, with superior avalanche ruggedness and integrated thermal path - making it optimal for space-constrained, high-efficiency industrial power stages where conduction loss dominates total loss budget.

Availability

2SK3943-ZP-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, uninterruptible power systems, and battery management systems requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SK3943-ZP-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK3943-ZP-E1-AY belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for industrial-grade power conversion and motor control applications demanding high reliability and ruggedness under repetitive stress.

FAQ

What is the maximum continuous drain current rating for the 2SK3943-ZP-E1-AY at 25°C case temperature?

The 2SK3943-ZP-E1-AY has a maximum continuous drain current I_D(DC) of ±82 A when the case temperature T_C is maintained at 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C using the specified derating factor - for example, at T_C = 100°C, the usable I_D(DC) drops to approximately 45 A. Always verify thermal design using R_th(ch-C) = 1.2 °C/W and actual board-level thermal resistance.

Does the 2SK3943-ZP-E1-AY include built-in gate protection, and is external protection required?

Yes, the 2SK3943-ZP-E1-AY integrates a gate-to-source protection diode to guard against ESD, as shown in its equivalent circuit diagram. However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, for robust operation in noisy industrial environments or high-dV/dt switching nodes, a Zener clamp (e.g., 15 V) between gate and source is strongly recommended alongside appropriate gate resistor selection.

Can the 2SK3943-ZP-E1-AY be used in synchronous rectification applications, and what body diode parameters support this?

Yes, the 2SK3943-ZP-E1-AY is suitable for synchronous rectification due to its characterized body diode performance: VF(S-D)1 = 0.88–1.2 V at I_F = 60 A and V_GS = 0 V, with t_rr = 40 ns and Q_rr = 49 nC. These values enable low-loss freewheeling in high-frequency buck converters, especially when paired with precise gate timing to minimize overlap conduction. The 2SK3943-ZP-E1-AY's low Q_rr reduces reverse-recovery-related switching loss and EMI compared to standard MOSFETs.

What is the safe operating area (SOA) limitation for the 2SK3943-ZP-E1-AY at 100 V_DS and 10 A drain current?

At V_DS = 100 V and I_D = 10 A, the 2SK3943-ZP-E1-AY exceeds its absolute maximum V_DSS rating of 40 V and therefore cannot operate safely. Its SOA curve (Figure 2, Data Sheet D17188EJ2V0DS) confirms operation is only permitted up to V_DS = 40 V. At 40 V and 10 A, the device remains within the R_DS(on)-limited region for DC operation - provided case temperature is ≤85°C and power dissipation stays below PT1 = 104 W.

Is the 2SK3943-ZP-E1-AY RoHS compliant, and what is its quality grade per Renesas classification?

Yes, the 2SK3943-ZP-E1-AY is RoHS compliant, as confirmed by Renesas' environmental compliance documentation and packaging markings. Per Renesas' quality grading system defined in the datasheet notice, it carries the "Standard" quality grade - intended for computers, office equipment, communications gear, industrial robots, and similar non-safety-critical applications. It is not qualified for automotive, medical life-support, or aerospace use without explicit written consent from Renesas Electronics.

2SK3943-ZP-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 104W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

2SK3943-ZP-E1-AY FAQ

1.How can I place an order for 2SK3943-ZP-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3943-ZP-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3943-ZP-E1-AY reliable?

The price and inventory of 2SK3943-ZP-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3943-ZP-E1-AY is usually 5 days.

3.What payment methods are accepted for 2SK3943-ZP-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3943-ZP-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3943-ZP-E1-AY?

2SK3943-ZP-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3943-ZP-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3943-ZP-E1-AY?

For technical support, including 2SK3943-ZP-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3943-ZP-E1-AY requirements.

6.How does Aetrix verify that 2SK3943-ZP-E1-AY is sourced from the original manufacturer or authorized distributors?

All 2SK3943-ZP-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3943-ZP-E1-AY meets industry standards.

7.What is the process for return or replacement of 2SK3943-ZP-E1-AY?

All 2SK3943-ZP-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3943-ZP-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3943-ZP-E1-AY part is unused and in its original packaging.

Return procedure for 2SK3943-ZP-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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