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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3993-ZK-E1-AZ

Name: 2SK3993-ZK-E1-AZ
Brand: Renesas
SKU: 2SK3993-ZK-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3993-ZK-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SK3993-ZK-E1-AZ.pdf

Description:: MOSFET N-CH 25V 64A TO252

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Product details

Overview

2SK3993-ZK-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for low-voltage, high-current synchronous rectification in DC/DC converters. It delivers R_DS(on)1 = 3.8 mΩ max at V_GS = 10 V and I_D = 32 A, supports 5 V gate drive, and features C_iss = 4770 pF typical - enabling efficient switching in compact power stages.

For engineers reviewing the 2SK3993-ZK-E1-AZ datasheet, 2SK3993-ZK-E1-AZ pinout, 2SK3993-ZK-E1-AZ application, or 2SK3993-ZK-E1-AZ equivalent, key selection criteria include its TO-252 (MP-3ZK) package, avalanche-rated operation (E_AS = 168 mJ), body diode reverse recovery time (t_rr = 43 ns), and suitability for high-frequency, high-efficiency buck converter topologies.

Technical Context

This device employs a planar vertical DMOS structure optimized for low conduction loss and fast switching. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) ensures reliable turn-on with standard logic-level drivers, while the 5 V drive capability enables direct interface with microcontrollers and PWM controllers without level-shifting.

The integrated body diode exhibits VF(S-D) = 0.91 V at I_F = 64 A and t_rr = 43 ns under specified di/dt conditions, supporting efficient freewheeling in synchronous rectifier configurations. Avalanche ruggedness (I_AS = 41 A, E_AS = 168 mJ) provides robustness against inductive switching transients in non-isolated DC/DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum drain-source blocking voltage compatible with 12 V input bus systems and 5 V output rails.
R_DS(on)1	3.8 mΩ max @ V_GS = 10 V, I_D = 32 A - Enables <100 mW conduction loss at 32 A, critical for thermal management in high-current POL converters.
C_iss	4770 pF typ - Low input capacitance reduces gate drive power and improves switching speed in high-frequency (>500 kHz) designs.
t_rr	43 ns - Fast body diode recovery minimizes shoot-through risk and switching losses during dead-time transitions.
Q_G	88 nC - Gate charge value determines required driver peak current and influences gate loop stability in high-speed layouts.
E_AS	168 mJ - Single-pulse avalanche energy rating allows safe operation under transient overvoltage events without external clamping.
P_T1	40 W @ T_C = 25°C - Thermal performance enables high-power density when mounted on copper-clad PCBs with adequate heatsinking.

Pinout & Package

2SK3993-ZK-E1-AZ uses the TO-252 (MP-3ZK) surface-mount package - a 3-lead, single-die configuration with exposed drain pad for enhanced thermal dissipation. The package measures 10.4 mm × 6.1 mm × 2.3 mm (max height) and features gull-wing leads compatible with standard reflow processes.

Pin/Terminal	Circuit Role	Design Meaning
1. Gate	Control electrode	Accepts 0–20 V gate drive; threshold voltage range 2.0–3.0 V ensures compatibility with 3.3 V and 5 V logic interfaces.
2. Drain	Main current path (high-side connection)	Connected to internal die backside and exposed metal tab - must be thermally and electrically tied to PCB ground plane or heatsink.
3. Source	Reference node for gate drive and current return	Serves as common reference for gate control and load current return; requires low-inductance layout to minimize switching noise.

Key Features

Feature	Design Value
Low R_DS(on) with 5 V drive	R_DS(on)2 = 7.8 mΩ max @ V_GS = 5 V, I_D = 16 A - enables use with 5 V microcontroller outputs without gate driver ICs.
Fast switching with low Q_G/Q_GD ratio	Q_GD/Q_G = 34% - reduces Miller-induced switching delay and improves controllability in hard-switched topologies.
Robust body diode	t_rr = 43 ns, Q_rr = 52 nC - minimizes reverse recovery losses and EMI generation during synchronous rectification.
Avalanche-rated operation	I_AS = 41 A, E_AS = 168 mJ - eliminates need for external snubbers in inductive load switching applications like motor drives and DC/DC converters.

Applications

Server VRM Power Stage	Industrial DC/DC Converter
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC processors. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 300–1000 kHz with precise dead-time control. Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 5 mΩ devices, directly improving VRM efficiency and reducing thermal load on motherboard layers.	Use Scenario: 24 V input to 5 V/3.3 V isolated or non-isolated DC/DC module for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in fixed-frequency forward or buck topology. Use Value: 168 mJ avalanche energy rating permits reliable operation during line transients and short-circuit events without derating or external protection components.
Telecom PoL Regulator	Automotive Body Control Module
Use Scenario: Point-of-load regulator powering FPGAs or ASICs in 48 V telecom equipment. IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck stage operating up to 1 MHz. Use Value: 4770 pF C_iss and 88 nC Q_G enable clean, low-loss switching at high frequency while maintaining manageable gate drive requirements.	Use Scenario: 12 V battery-fed DC/DC converter supplying 5 V for CAN transceivers and microcontrollers in BCMs. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter handling continuous 20–40 A loads. Use Value: TO-252 package provides sufficient thermal margin for sustained 64 A pulsed operation without forced air cooling, simplifying mechanical design.

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 300–1000 kHz with precise dead-time control.

Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 5 mΩ devices, directly improving VRM efficiency and reducing thermal load on motherboard layers.

Use Scenario: 24 V input to 5 V/3.3 V isolated or non-isolated DC/DC module for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in fixed-frequency forward or buck topology.

Use Value: 168 mJ avalanche energy rating permits reliable operation during line transients and short-circuit events without derating or external protection components.

Telecom PoL Regulator

Automotive Body Control Module

Use Scenario: Point-of-load regulator powering FPGAs or ASICs in 48 V telecom equipment.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck stage operating up to 1 MHz.

Use Value: 4770 pF C_iss and 88 nC Q_G enable clean, low-loss switching at high frequency while maintaining manageable gate drive requirements.

Use Scenario: 12 V battery-fed DC/DC converter supplying 5 V for CAN transceivers and microcontrollers in BCMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter handling continuous 20–40 A loads.

Use Value: TO-252 package provides sufficient thermal margin for sustained 64 A pulsed operation without forced air cooling, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.3 mΩ @ 10 V, but higher C_iss = 5200 pF; no published E_AS rating.	Lacks documented avalanche ruggedness - unsuitable for unclamped inductive switching.	Prefer 2SK3993-ZK-E1-AZ where transient overvoltage immunity is required.
STP30NF20	Higher V_DSS = 200 V, R_DS(on) = 35 mΩ - significantly higher conduction loss at 25 V operation.	Designed for high-voltage industrial motor drives, not optimized for low-V_DS high-current DC/DC.	2SK3993-ZK-E1-AZ offers 9× lower R_DS(on) at 25 V, delivering superior efficiency in low-voltage POL applications.

Compared with IRL3803PbF and STP30NF20, the 2SK3993-ZK-E1-AZ uniquely balances ultra-low on-resistance, fast switching, and certified avalanche capability in a TO-252 package - making it optimal for high-reliability, high-efficiency synchronous rectifiers in 12–24 V input DC/DC converters.

Availability

2SK3993-ZK-E1-AZ is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom PoL regulators, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for 2SK3993-ZK-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK3993-ZK-E1-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-efficiency, low-voltage synchronous rectification in DC/DC conversion - emphasizing low R_DS(on), fast switching, and ruggedness in consumer and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for the 2SK3993-ZK-E1-AZ?

The 2SK3993-ZK-E1-AZ has a maximum continuous drain current (I_D(DC)) of ±64 A at T_C = 25°C. This rating assumes proper PCB copper area and thermal management; actual usable current depends on case temperature and layout. Derating applies above 25°C per the datasheet's total power dissipation curve.

Does the 2SK3993-ZK-E1-AZ support 3.3 V gate drive?

No - the 2SK3993-ZK-E1-AZ is not guaranteed to fully enhance with 3.3 V gate drive. Its gate threshold voltage (V_GS(off)) ranges from 2.0 to 3.0 V, and R_DS(on)2 = 4.1–7.8 mΩ is specified only at V_GS = 5.0 V. For reliable low-R_DS(on) operation, 5 V or 10 V gate drive is required.

What is the thermal resistance from channel to case (R_th(ch-C)) for the 2SK3993-ZK-E1-AZ?

The 2SK3993-ZK-E1-AZ has a channel-to-case thermal resistance (R_th(ch-C)) of 3.13°C/W, measured under JEDEC conditions. This value is critical for calculating junction temperature rise in TO-252-mounted designs and confirms the device's suitability for high-power-density applications when soldered to adequate copper area.

Is the 2SK3993-ZK-E1-AZ RoHS compliant?

Yes - the 2SK3993-ZK-E1-AZ is RoHS compliant per EU Directive 2011/65/EU. Renesas Electronics confirms lead-free plating and halogen-free molding compound in this part variant, consistent with its "Standard" quality grade classification and target applications in office equipment and industrial electronics.

What is the purpose of the fourth terminal (Fin/Drain) shown in the TO-252 package drawing?

The fourth terminal labeled "Fin (Drain)" in the 2SK3993-ZK-E1-AZ TO-252 package drawing is the exposed drain pad - a large metal surface on the underside of the package. It serves as both the primary thermal path to the PCB and the electrical connection to the drain node, requiring direct soldering to a copper pour for optimal thermal and electrical performance.

2SK3993-ZK-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4770 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (MP-3Z)

2SK3993-ZK-E1-AZ FAQ

1.How can I place an order for 2SK3993-ZK-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3993-ZK-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3993-ZK-E1-AZ reliable?

The price and inventory of 2SK3993-ZK-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3993-ZK-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3993-ZK-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3993-ZK-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3993-ZK-E1-AZ?

2SK3993-ZK-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3993-ZK-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3993-ZK-E1-AZ?

For technical support, including 2SK3993-ZK-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3993-ZK-E1-AZ requirements.

6.How does Aetrix verify that 2SK3993-ZK-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3993-ZK-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3993-ZK-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3993-ZK-E1-AZ?

All 2SK3993-ZK-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3993-ZK-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3993-ZK-E1-AZ part is unused and in its original packaging.

Return procedure for 2SK3993-ZK-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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