Renesas 2SK4077-ZK-E1-AY

Overview

2SK4077-ZK-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive stages, featuring R_DS(on)1 = 20 mΩ max at V_GS = 10 V / I_D = 10 A, V_DSS = 40 V, and I_D(DC) = ±20 A with TO-252 (MP-3ZK) surface-mount package.

For engineers reviewing the 2SK4077-ZK-E1-AY datasheet, 2SK4077-ZK-E1-AY pinout, 2SK4077-ZK-E1-AY application, or 2SK4077-ZK-E1-AY equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(off) = 1.5–2.5 V), low C_iss = 800 pF typ., built-in gate-source ESD protection diode, and avalanche-rated operation (E_AS = 10 mJ).

Technical Context

This discrete power switch operates as a unidirectional, enhancement-mode N-channel device with integrated body diode and gate-source protection diode. Its channel temperature rating of 150°C and R_th(ch-C) = 6.25°C/W support high-power density PCB layouts when mounted on thermally optimized copper areas.

The device delivers fast switching performance with t_d(on) = 11 ns, t_r = 4 ns, t_d(off) = 29 ns, and t_f = 4 ns under V_DD = 20 V, I_D = 10 A conditions, enabled by Q_G = 18 nC and Q_GD = 6 nC - critical for minimizing conduction and switching losses in 100 kHz–500 kHz SMPS topologies.

Key Specifications

Pinout & Package

2SK4077-ZK-E1-AY uses the TO-252 (MP-3ZK) surface-mount package with exposed drain pad (Pin 4) for thermal and electrical connection. The package weighs typ. 0.27 g and features pure Sn lead plating compliant with Pb-free requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and DMN3025LFG-7, the 2SK4077-ZK-E1-AY uniquely combines 20 A DC current capability, 10 mJ avalanche energy rating, and logic-level gate drive in a thermally optimized TO-252 package - making it the preferred choice for industrial-grade switching where reliability under transient stress is non-negotiable.

Availability

2SK4077-ZK-E1-AY is available at Aetrix Electronics and suitable for industrial motor drives, 24 V/36 V DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for 2SK4077-ZK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK4077 belongs to Renesas' legacy high-current power MOSFET product line, engineered specifically for ruggedized industrial switching applications including motor control, UPS systems, and high-efficiency DC-DC conversion where thermal stability and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for 2SK4077-ZK-E1-AY at case temperature of 75°C?

The 2SK4077-ZK-E1-AY has a DC drain current rating of ±20 A at T_C = 25°C. Derating follows the published curve: at T_C = 75°C, the maximum allowable I_D(DC) is approximately ±14 A. This value is derived from the linear derating factor shown in Figure 1 of the D18461EJ1V0DS datasheet, where total power dissipation drops from 20 W at 25°C to ~12 W at 75°C, consistent with R_DS(on) increase and thermal resistance constraints. Always verify layout-dependent thermal performance in final design.

Does 2SK4077-ZK-E1-AY support logic-level gate drive from a 3.3 V microcontroller?

Yes, 2SK4077-ZK-E1-AY supports logic-level drive: its gate threshold voltage V_GS(off) is specified as 1.5–2.5 V, and R_DS(on)2 = 35 mΩ max is guaranteed at V_GS = 4.5 V / I_D = 5 A. While full 20 A conduction requires V_GS ≥ 10 V, the device switches reliably at 3.3 V in low-current (<3 A) or pulsed applications. For robust 10+ A operation, a gate driver with ≥5 V output is recommended.

What is the purpose of the internal gate-to-source diode in 2SK4077-ZK-E1-AY?

The internal gate-to-source diode in 2SK4077-ZK-E1-AY serves as an ESD protection element, clamping transient voltages between gate and source to prevent gate oxide breakdown during handling or PCB assembly. As noted in the Equivalent Circuit diagram (page 7), this diode is not intended for functional circuit operation - external gate protection (e.g., Zener clamp) remains necessary if the device may experience V_GS exceeding ±20 V in system use.

Can 2SK4077-ZK-E1-AY be used in avalanche mode repeatedly, and what are the limits?

2SK4077-ZK-E1-AY is rated for single-pulse avalanche with I_AS = 10 A and E_AS = 10 mJ under defined test conditions (T_ch = 25°C, V_DD = 20 V, L = 100 μH, R_G = 25 Ω). Repetitive avalanche is not characterized or guaranteed in the datasheet. For designs requiring frequent inductive turn-off stress, thermal cycling and long-term reliability must be validated per JEDEC JEP180, and derating of both energy and pulse count is strongly advised.

What is the thermal resistance from channel to ambient (R_th(ch-A)) for 2SK4077-ZK-E1-AY in standard PCB mounting?

The datasheet specifies R_th(ch-A) = 125°C/W for the 2SK4077-ZK-E1-AY in TO-252 package under standard JEDEC test conditions (single-layer 1 in² copper pad, no thermal vias). In real-world layouts with ≥2 cm² copper area and ≥4 thermal vias to inner ground planes, measured R_th(ch-A) typically improves to 40–60°C/W. The channel-to-case value R_th(ch-C) = 6.25°C/W remains fixed and is the primary metric for heatsink-coupled designs.