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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK4092-S35-A

Name: 2SK4092-S35-A
Brand: Renesas
SKU: 2SK4092-S35-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK4092-S35-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: 2SK4092-S35-A.pdf

Description:: 2SK4092-S35-A - SWITCHING N-CHAN

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Product details

Overview

2SK4092-S35-A from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications including AC adapters and offline switching power supplies. It features a 600 V drain-source breakdown voltage, 21 A DC drain current rating, 0.4 Ω maximum R_DS(on) at V_GS = 10 V, 50 nC typical total gate charge, and TO-3P (MP-88) package with integrated heat sink tab.

For engineers reviewing the 2SK4092-S35-A datasheet, 2SK4092-S35-A pinout, 2SK4092-S35-A application, or 2SK4092-S35-A equivalent, key selection criteria include avalanche energy rating (29.4 mJ), gate voltage tolerance (±30 V), body diode forward voltage (0.9–1.5 V), safe operating area under pulse conditions, and thermal resistance (R_th(ch-C) = 0.625 °C/W).

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, leveraging its low Q_G and fast switching times (t_d(on) = 38 ns, t_f = 12 ns) to minimize conduction and switching losses. Its avalanche-rated design supports inductive load handling without external snubbers in flyback and resonant converters.

The 2SK4092-S35-A integrates a robust body diode with 480 ns reverse recovery time and 6000 nC Q_rr, enabling operation in synchronous rectification and freewheeling roles where controlled diode conduction is required. Its ±30 V gate rating allows direct drive from standard logic-level gate drivers without level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports primary-side switching in universal-input (85–265 VAC) offline SMPS without derating.
R_DS(on) max	0.4 Ω @ V_GS = 10 V, I_D = 10 A - Enables <1 W conduction loss at 5 A continuous drain current.
Q_G typ	50 nC - Reduces gate driver power demand and enables efficient operation at 100–500 kHz switching frequencies.
E_AS	29.4 mJ - Allows reliable single-pulse inductive turn-off without clamping in 150 V bus applications.
T_ch max	150 °C - Permits operation in sealed enclosures with limited airflow when mounted on ≥10 cm² copper heatsink.
C_iss	3240 pF - Determines Miller plateau duration and influences gate drive strength requirements in high-dV/dt environments.
V_F(S-D)	0.9–1.5 V @ I_F = 21 A - Defines forward conduction loss during body diode freewheeling in non-synchronous topologies.

Pinout & Package

2SK4092-S35-A uses the TO-3P (MP-88) package: a through-hole, isolated-tab metal-can package with 4 terminals and integral heat sink fin (Drain-connected). Mounting requires insulating washer and torque-controlled screw assembly to maintain thermal and electrical integrity.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; sensitive to ESD (±30 V absolute max).
2 (Drain)	Main current output	High-voltage terminal connected to heat sink fin; carries full load current and withstands 600 V transient spikes.
3 (Source)	Reference node	Return path for drain current; establishes ground reference for gate drive and sensing in low-side configurations.
4 (Fin/Drain)	Thermal & electrical connection	Electrically tied to Drain; provides mechanical mounting surface and primary thermal path to heatsink (R_th(ch-C) = 0.625 °C/W).

Key Features

Feature	Design Value
Low R_DS(on)	0.34 Ω typical at 10 V gate drive - reduces I²R losses in high-current DC/DC stages and improves efficiency above 85% at full load.
Avalanche-rated	21 A single-pulse I_AS, 29.4 mJ E_AS - eliminates need for external clamping in flyback transformer reset and relay driving circuits.
Fast switching	t_d(off) = 58 ns, t_f = 12 ns - enables high-frequency operation up to 500 kHz while maintaining low switching loss budget.
Robust body diode	t_rr = 480 ns, Q_rr = 6000 nC - supports reliable freewheeling in non-synchronous buck and forward converters without oscillation.
High gate voltage rating	±30 V V_GSS - accommodates gate driver overshoot and noise margin in industrial environments without gate oxide degradation.

Applications

AC Adapter Power Stage	Industrial SMPS Primary Switch
Use Scenario: 65 W universal-input AC adapter for laptop computers operating from 85–265 VAC input. IC Role / Device Role / Timing Role: High-voltage N-channel switch in discontinuous conduction mode (DCM) flyback topology, switching at 65 kHz. Use Value: 600 V V_DSS ensures margin against line surges; 0.4 Ω R_DS(on) keeps conduction loss below 0.8 W at 5 A peak current.	Use Scenario: 200 W open-frame industrial power supply for factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) flyback converter with active clamp reset. Use Value: Avalanche rating absorbs leakage inductance energy during turn-off; TO-3P package enables 200 W dissipation with forced-air cooling.
LED Driver Bulk Switch	Motor Drive Protection FET
Use Scenario: Constant-current LED driver for street lighting using 350 V DC bus derived from rectified 240 VAC. IC Role / Device Role / Timing Role: High-side switching element controlling LED string current via PWM dimming at 1–10 kHz. Use Value: Low Q_G (50 nC) minimizes gate driver losses during frequent PWM transitions; 21 A ID(DC) supports >100 W LED loads.	Use Scenario: Back-EMF protection switch in 24 V brushed DC motor control module for HVAC actuators. IC Role / Device Role / Timing Role: Clamping FET across motor terminals to absorb inductive kick during commutation. Use Value: 29.4 mJ E_AS safely dissipates 15 mJ per switching event over 10⁶ cycles; TO-3P mechanical robustness withstands vibration.

AC Adapter Power Stage

Industrial SMPS Primary Switch

Use Scenario: 65 W universal-input AC adapter for laptop computers operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in discontinuous conduction mode (DCM) flyback topology, switching at 65 kHz.

Use Value: 600 V V_DSS ensures margin against line surges; 0.4 Ω R_DS(on) keeps conduction loss below 0.8 W at 5 A peak current.

Use Scenario: 200 W open-frame industrial power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) flyback converter with active clamp reset.

Use Value: Avalanche rating absorbs leakage inductance energy during turn-off; TO-3P package enables 200 W dissipation with forced-air cooling.

LED Driver Bulk Switch

Motor Drive Protection FET

Use Scenario: Constant-current LED driver for street lighting using 350 V DC bus derived from rectified 240 VAC.

IC Role / Device Role / Timing Role: High-side switching element controlling LED string current via PWM dimming at 1–10 kHz.

Use Value: Low Q_G (50 nC) minimizes gate driver losses during frequent PWM transitions; 21 A ID(DC) supports >100 W LED loads.

Use Scenario: Back-EMF protection switch in 24 V brushed DC motor control module for HVAC actuators.

IC Role / Device Role / Timing Role: Clamping FET across motor terminals to absorb inductive kick during commutation.

Use Value: 29.4 mJ E_AS safely dissipates 15 mJ per switching event over 10⁶ cycles; TO-3P mechanical robustness withstands vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 0.75 Ω, TO-220FP package, no avalanche rating	Limited to lower-current (<6 A) applications; unsuitable for repetitive inductive switching without external protection	Select when cost sensitivity outweighs avalanche requirement and current demand is ≤6 A.
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.22 Ω, TO-247 package, E_AS = 420 mJ	Higher current and energy capability; larger footprint and higher gate charge (120 nC)	Choose for >21 A continuous loads or systems requiring >10× avalanche endurance margin.

Compared with STP6NK60ZFP and IXFH30N60P, the 2SK4092-S35-A delivers optimal balance of 21 A current handling, 29.4 mJ avalanche energy, and compact TO-3P thermal performance-making it ideal for mid-power industrial and adapter designs where reliability and board space are both critical.

Availability

2SK4092-S35-A is available at Aetrix Electronics and suitable for AC adapter power stages, industrial SMPS primary switches, LED driver bulk switches, and motor drive protection FETs requiring stable component supply and long-term lifecycle support.

Supply support for 2SK4092-S35-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The 2SK4092-S35-A belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for ruggedized offline switching applications demanding high avalanche robustness and stable parametric performance across temperature.

FAQ

What is the maximum continuous drain current rating for the 2SK4092-S35-A?

The 2SK4092-S35-A has a maximum continuous drain current (I_D(DC)) rating of ±21 A at T_C = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25°C per the datasheet's thermal curves. At elevated temperatures or with limited cooling, the usable current must be reduced to prevent exceeding the 150°C channel temperature limit.

Does the 2SK4092-S35-A have avalanche capability, and how is it specified?

Yes, the 2SK4092-S35-A is fully avalanche-rated with a single-pulse avalanche current (I_AS) of 21 A and single-pulse avalanche energy (E_AS) of 29.4 mJ under standardized test conditions (V_DD = 150 V, R_G = 25 Ω, starting T_ch = 25°C). This rating enables reliable operation in inductive switching circuits without external clamping components, provided pulse repetition remains within safe thermal limits.

What package type does the 2SK4092-S35-A use, and what are its thermal characteristics?

The 2SK4092-S35-A uses the TO-3P (MP-88) package-a 4-terminal, isolated-tab metal-can housing with an integrated heat sink fin electrically connected to the Drain. Its channel-to-case thermal resistance (R_th(ch-C)) is 0.625 °C/W, enabling efficient heat transfer to an external heatsink. The package supports up to 200 W total power dissipation at T_C = 25°C, with linear derating above that temperature.

What is the gate threshold voltage range for the 2SK4092-S35-A, and how does it affect drive requirements?

The gate-to-source cutoff voltage (V_GS(off)) for the 2SK4092-S35-A is specified from 2.5 V to 3.5 V at I_D = 1 mA and V_DS = 10 V. This relatively tight threshold range ensures consistent turn-on behavior across units and simplifies gate driver design. A 10 V gate drive is recommended to achieve full enhancement and minimal R_DS(on), while the ±30 V gate rating allows margin against transients.

Can the 2SK4092-S35-A be used in synchronous rectification applications?

No-the 2SK4092-S35-A is not optimized for synchronous rectification due to its relatively high body diode forward voltage (0.9–1.5 V) and 480 ns reverse recovery time. Its design prioritizes high-voltage switching and avalanche ruggedness rather than fast, low-loss diode conduction. For synchronous rectification, dedicated low-V_F, low-Q_rr MOSFETs such as the SiHP12N60E or IPP60R099P7 are more appropriate alternatives.

2SK4092-S35-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 200W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P (MP-88)

2SK4092-S35-A FAQ

1.How can I place an order for 2SK4092-S35-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK4092-S35-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK4092-S35-A reliable?

The price and inventory of 2SK4092-S35-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK4092-S35-A is usually 5 days.

3.What payment methods are accepted for 2SK4092-S35-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK4092-S35-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK4092-S35-A?

2SK4092-S35-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK4092-S35-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK4092-S35-A?

For technical support, including 2SK4092-S35-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK4092-S35-A requirements.

6.How does Aetrix verify that 2SK4092-S35-A is sourced from the original manufacturer or authorized distributors?

All 2SK4092-S35-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK4092-S35-A meets industry standards.

7.What is the process for return or replacement of 2SK4092-S35-A?

All 2SK4092-S35-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SK4092-S35-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK4092-S35-A part is unused and in its original packaging.

Return procedure for 2SK4092-S35-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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